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个人信息：Personal Information
教授
性别：男
毕业院校：beoplay体育提现
学历：博士研究生毕业
学位：博士学位
在职信息：在岗
所在单位：集成电路学部
学科：集成电路系统设计 微电子学与固体电子学 凝聚态物理
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论文成果
当前位置: 中文主页 >> bepaly手机下载 >> 论文成果- [1]Mechanical and electronic properties of C-Si alloys in the P222(1) structure.CHINESE JOURNAL OF PHYSICS.2016,54 (5):700-710
- [2]Mechanical and electronic properties of Ca1-xMgxO alloys.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.2015,40 :676-684
- [3]Prediction of novel phase of silicon and Si-Ge alloys.JOURNAL OF SOLID STATE CHEMISTRY.2016,233 :471-483
- [4]Prediction of novel phase of silicon and Si-Ge alloys.Journal of Solid State Chemistry.2016,233 :471-483
- [5]First-principles calculations of electrical and optical properties of strained ZnO.Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society.2015,43 (4):424-430
- [6]Elastic and electronic properties of M585 carbon under pressure.CHINESE JOURNAL OF PHYSICS.2016,54 (3):398-407
- [7]Estimating termination effect on electric and magnetic field-to-line coupling for radiated immunity tests using a TEM cell.Progress in Electromagnetics Research Letters.2016,60 :39-44
- [8]Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse.MICROELECTRONICS RELIABILITY.2016,66 :32-37
- [9]Mechanical and electronic properties of Si-Ge alloy in Cmmm structure.CHINESE JOURNAL OF PHYSICS.2016,54 (2):298-307
- [10]Mechanical and electronic properties of Si, Ge and their alloys in P4(2)/mnm structure.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.2016,43 :187-195
- [11]Using Termination Effect to Characterize Electric and Magnetic Field Coupling Between TEM Cell and Microstrip Line.IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY.2015,57 (6):1338-1344
- [12]Two novel silicon phases with direct band gaps.PHYSICAL CHEMISTRY CHEMICAL PHYSICS.2016,18 (18):1290-1291
- [13]Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs.MICROELECTRONICS RELIABILITY.2015,55 (8):1174-1179
- [14]Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor.CHINESE PHYSICS B.2015,24 (4)
- [15]Two Novel C3N4 Phases: Structural, Mechanical and Electronic Properties.MATERIALS.2016,9 (6)
- [16]The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide.MATERIALS.2016,9 (5)
- [17]Si-96: A New Silicon Allotrope with Interesting Physical Properties.MATERIALS.2016,9 (4)
- [18]Elastic anisotropy and electronic properties of Si3N4 under pressures.AIP ADVANCES.2016,6 (8)
- [19]Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse.ACTA PHYSICA SINICA.2016,65 (3)
- [20]Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse.CHINESE PHYSICS B.2016,25 (4)