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个人信息：Personal Information
教授
性别：男
毕业院校：西安交通大学
学历：博士研究生毕业
学位：博士学位
在职信息：在岗
所在单位：集成电路学部
学科：集成电路系统设计 微电子学与固体电子学
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论文成果
当前位置: 中文主页 >> bepaly手机下载 >> 论文成果- [21]The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT.IEICE ELECTRONICS EXPRESS.2015,12 (24)
- [22]InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2015,30 (7)
- [23]Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors.CHINESE PHYSICS B.2015,24 (11)
- [24]Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment.CHINESE PHYSICS B.2015,24 (2)
- [25]Analysis of the third harmonic for class-F power amplifiers with an I-V knee effect.CHINESE PHYSICS B.2015,24 (5)
- [26]Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range.Chinese Physics B.2014,23 (9)
- [27]Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors.Chinese Physics B.2014,23 (9)
- [28]A physics-based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor.Physica Status Solidi (A) Applications and Materials Science.2017,214 (1)