|
个人信息：Personal Information
教授
性别：男
毕业院校：西安交通大学
学历：博士研究生毕业
学位：博士学位
在职信息：在岗
所在单位：集成电路学部
学科：集成电路系统设计 微电子学与固体电子学
扫描关注
论文成果
当前位置: 中文主页 >> bepaly手机下载 >> 论文成果- [1]Synthesis of Multi layer Graphene Films on Copper by Modified Chemical Vapor Deposition.MATERIALS AND MANUFACTURING PROCESSES.2015,30 (6):711-716
- [2]Synthesis of multilayer graphene films on copper by modified chemical vapor deposition.Materials and Manufacturing Processes.2015,30 (6):711-716
- [3]Novel combined edge termination for P-channel VDMOS.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2015,42 (6):70-74
- [4]Effects of deep etching methods on the microstructure of the etched vias of the silicon-based SIWF.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2015,42 (4):41-46
- [5]Threshold voltage engineering in GaN-based HEMT by using La<inf>2</inf>O<inf>3</inf>gate dielectric.Physica Status Solidi (C) Current Topics in Solid State Physics.2016,13 (5-6):325-327
- [6]Design of double sample 1.2 V 7 bit 125 MS/s pipelined ADC.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2016,43 (4):23-28
- [7]A 5鈥?GHz wideband 100W internally matched GaN power amplifier.IEICE Electronics Express.2015,12 (6):1-6
- [8]Analysis of the Breakdown Characterization Method in GaN-Based HEMTs.IEEE Transactions on Power Electronics.2016,31 (2):1517-1527
- [9]Enhancement-mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O-2 plasma implantation.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2015,212 (5):1081-1085
- [10]Effects of the flow rate of hydrogen on the growth of graphene.INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS.2015,22 (1):102-110
- [11]X-band inverse class-F GaN internally-matched power amplifier.CHINESE PHYSICS B.2016,25 (9)
- [12]Superior transport properties of InGaN channel heterostructure with high channel electron mobility.APPLIED PHYSICS EXPRESS.2016,9 (6)
- [13]Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition.CHINESE PHYSICS B.2016,25 (1)
- [14]Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers.CHINESE PHYSICS LETTERS.2016,33 (6)
- [15]Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor.CHINESE PHYSICS B.2016,25 (2)
- [16]A novel graphical method for dual-frequency two sections transformer.IEICE ELECTRONICS EXPRESS.2016,13 (12)
- [17]Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses.APPLIED PHYSICS LETTERS.2015,107 (6)
- [18]Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs.AIP ADVANCES.2015,5 (9)
- [19]A 5-8 GHz wideband 100 W internally matched GaN power amplifier.IEICE ELECTRONICS EXPRESS.2015,12 (6)
- [20]A multi-cell battery pack monitoring chip based on 0.35-mu m BCD technology for electric vehicles.IEICE ELECTRONICS EXPRESS.2015,12 (12)