郝跃
个人信息:Personal Information
教授
性别:男
毕业院校:西安交通大学
学历:博士研究生毕业
学位:博士学位
在职信息:在岗
所在单位:集成电路学部
学科:集成电路系统设计 微电子学与固体电子学
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- Synthesis of Multi layer Graphene Films on Copper by Modified Chemical Vapor Deposition.MATERIALS AND MANUFACTURING PROCESSES.2015,30(6):711-716
- Synthesis of multilayer graphene films on copper by modified chemical vapor deposition.Materials and Manufacturing Processes.2015,30(6):711-716
- Novel combined edge termination for P-channel VDMOS.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2015,42(6):70-74
- Effects of deep etching methods on the microstructure of the etched vias of the silicon-based SIWF.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2015,42(4):41-46
- Threshold voltage engineering in GaN-based HEMT by using La<inf>2</inf>O<inf>3</inf>gate dielectric.Physica Status Solidi (C) Current Topics in Solid State Physics.2016,13(5-6):325-327
- Design of double sample 1.2 V 7 bit 125 MS/s pipelined ADC.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2016,43(4):23-28
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