Profile:

李祥东，教授，博士，国家级青年人才，省级高层次引进人才，西电郝跃院士课题组成员。研究方向为模拟集成电路设计、功率器件设计与制造、可靠性和系统应用等。2020年获比利时鲁汶大学（KU Leuven）欧洲微电子中心IMEC博士学位，拥有多年第三代半导体 GaN 芯片量产技术开发经验，先后师从第三代半导体领域知名学者张进成教授和 IEEE Fellow、IMEC Fellow、charge pumping 测量技术发明人 Guido Groeseneken 教授。深度参与了 IMEC 全球首家商用级 8 英寸硅基氮化镓技术体系的开发，推动全球第三代半导体产学研合作发展。在IEEE系列顶刊以及IEDM，VLSI，ISPSD等顶会发表论文多篇。

欢迎报考2025级博士、硕士研究生~

所获荣誉：

1）2024年度国家级青年人才；

2）2022年度省级高层次引进人才；

3）2022年度广州科协青年托举人才；

4）2020年度欧洲微电子中心imec “卓越博士奖”（3个名额/400+博士）；

5）2020年度"海外优秀自费留学生"奖学金；

6）2010、2011、2015年度国家奖学金.

科研项目：

2021.12~2025.11: 国家重点研发计划“面向大数据中心应用的 8 英寸硅衬底上氮化镓基外延材料、功率电子器件及电源模块关键技术研究”之课题“Si 衬底上 GaN 基功率电子器件的可靠性提升技术及功率集成技术研究”，课题牵头人，390.6万，进行中。

2024年度学术论文（*为通讯作者）：

1)    Z. Cheng, X. Li^*, L. Chen, L. Wang, Z. Li, X. Tang, X. Liu, T. Zhang, X. Jiang, S. Yuan, S. You, Y. Hao, and J. Zhang, “Achieving ≥1200-V High-performance GaN HEMTs on Sapphire with Carbon-doped Buffer,” IEEE Trans. on Electron Devices, accepted, 2024.

2)    Z. Han, X. Li^*, J. Ji, L. Chen, L. Wang, Z. Cheng, W. Yang, S. You. Z. Li, Y. Hao, and J. Zhang, “p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics,” IEEE Electron Device Lett., vol. 45, no. 7, pp. 1257–1260, Jul. 2024.

3)    J. Wang, X. Li^*, Z. Cheng, T. Zhang, W. Zhou, L. Chen, Y. Yuan, T. Lu, L. Wang, Z. Li, S. You, X. Wang, Y. Hao, and J. Zhang, “Suppressing the Leakage of GaN HEMTs on Single Crystalline AlN Templates by Buffer Optimization,” IEEE Trans. on Electron Devices, vol. 71, no. 11, pp. 6609 - 6615, Nov. 2024.

4)    X. Li*, J. Zhang, J. Ji, Z. Cheng, J. Wang, L. Chen, L. Wang, S. You, L. Zhai, Q. Li, Y. Zhang, T. Liu, Z. Li, Y. Hao, and J. Zhang, “Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications,” IEEE Trans. on Electron Devices, vol. 71, no. 6, pp. 3989–3993, Jun. 2024.

5)    J. Wang, X. Li^*, L. Chen, T. Liu, Z. Han, S. You, L. Wang, Z. Li, Y. Hao, and J. Zhang, “Report of GaN HEMTs on 8-in Sapphire,” IEEE Trans. on Electron Devices, vol. 71, no. 7, pp. 4429 - 4432, Jul. 2024.

6)    X. Li*, J. Yuan, H. Wang, Z. Cai, W. Shao, Y. Chen, X. Zheng, J. Zhang, and Y. Hao, “Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse,” IEEE Trans. on Electron Devices, vol. 70, no. 11, pp. 5619–5625, Nov. 2023.

7)    X. Li*, J. Wang, J. Zhang, Z. Han, S. You, L. Chen, L. Wang, Z. Li, W. Yang, J. Chang, Z. Liu, and Y. Hao, “1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer,” IEEE Electron Device Lett., vol. 45, no. 1, pp. 84–77, Jan. 2024.

8)    X. Li*, M. Wang, H. Wang, J. Zhang, S. You, J. Wang, Z. Han, W. Yang, and Y. Hao, “Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure,” IEEE Trans. on Electron Devices, vol. 71, no. 4, pp. 2550–2556, Apr. 2024.

9)    T. Liu, X. Li*, Z. Han, L. Zhai, J. Wang, S. You, J. Zhang, J. Zhang, Z. Cheng, Y. Zhang, Q. Li, and Y. Hao, “Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection,” IEEE Journal of the Electron Devices Society, vol. 12, pp. 170–175, 2024.

近期代表性会议论文：

1)    X. Li*, N. Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, B. Bakeroot, D. Wellekens, B. Vanhove, T. Cosnier, R. Langer, D. Marcon, G. Groeseneken, and S. Decoutere, “GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion,” in IEDM Tech. Dig., pp.4.4.1–4.4.4, Dec. 7–11, 2019. 

2)    X. Li*, K. Geens, W. Guo, M. Zhao, S. You, N. Posthuma, S. Stoffels, H. Liang, V. Odnoblyudov, C. Basceri, O. Aktas, G. Groeseneken, and S. Decoutere, “  p-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICs,” in 13th International Conference on Nitride Semiconductors 2019 (ICNS), Jul. 7–12, 2019.    

3)    X. Li*, M. Zhao, K. Geens, W. Guo, S You, S. Stoffels, G. Groeseneken, and S. Decoutere, “Monolithic integration of half-bridge on GaN-on-SOI ,” in International Workshop on Nitride Semiconductors (IWN), Nov. 11–16, 2018.

4)    X. Li*, M. Van Hove, M. Zhao, K. Geens, V. Lempinen, J. Sormunen, S. Stoffels, G. Groeseneken, and S. Decoutere, “200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration,” in 41th Workshop on Compound Semiconductor Devices and Integrated Circuits  (WOCSDICE), pp. 103–104, May 21–24, 2017.