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Paper Publications
[1] Achieving ≥ 1200-v High-performance Gan Hemts on Sapphire With Carbon-doped Buffer
2024-11-30
[2] P-gan-gate Gan Power High-electron Mobility Transistors With Mg-acceptor Re-passivation Realized by Ammonia Plasma Treatment
2024-11-28
[3] Review of Reliability of Silicon Carbide Power Diodes
2024-11-28
[4] Report of Gan Hemts on 8-in Sapphire
2024-11-08
[5] P-gan Gate Hemts on 6-inch Sapphire by Cmos-compatible Process: a Promising Game Changer For Power Electronics
2024-11-08
[6] A Cmos-compatible Process For ？？￥3 Kv Gan Power Hemts on 6-inch Sapphire Using in Situ Sin As the Gate Dielectric.
2024-11-08
[7] 1700 V High-performance Gan Hemts on 6-inch Sapphire With 1.5 Mum Thin Buffer
2024-11-07
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李祥东
Personal Information:
Name (Simplified Chinese):
李祥东
Name (English):
Xiangdong Li
Name (Pinyin):
LIXIANGDONG
E-Mail:
xdli@xidian.edu.cn
Date of Employment:
2021-03-08
Education Level:
With Certificate of Graduation for Doctorate Study
Business Address:
广州市黄埔区中新广州知识城广州第三代半导体创新中心
Gender:
Male
Degree:
Doctoral Degree in Philosophy
Professional Title:
Professor
Academic Titles:
广州第三代半导体创新中心副主任
Discipline:
Microelectronics and Solid State Electronics Integrated Circuit System Design
