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个人信息：Personal Information
教授
主要任职：常委常委、副校长
性别：男
毕业院校：beoplay体育提现
学位：工学博士学位
在职信息：在岗
所在单位：集成电路学部
入职时间：2001-03-28
学科：微电子学与固体电子学
联系方式：jchzhang@xidian.edu.cn
电子邮箱：
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论文成果
当前位置: 中文主页 >> bepaly手机下载 >> 论文成果- [1]Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2016,213 (8):2203-2207
- [2]Effect of polyelectrolyte interlayer on efficiency and stability of p-i-n perovskite solar cells.SOLAR ENERGY.2016,139 :190-198
- [3]Tunable schottky barrier in blue phosphorus-graphene heterojunction with normal strain.JAPANESE JOURNAL OF APPLIED PHYSICS.2016,55 (8)
- [4]Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS.2016,33 (4)
- [5]Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures.CHINESE PHYSICS B.2016,25 (8)
- [6]Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS.2016,33 (10)
- [7]Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier.CHINESE PHYSICS LETTERS.2016,33 (8)
- [8]A partly-contacted epitaxial lateral overgrowth method applied to GaN material.SCIENTIFIC REPORTS.2016,6
- [9]Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition.APPLIED PHYSICS LETTERS.2015,106 (15)
- [10]Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition.AIP ADVANCES.2015,5 (12)
- [11]AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance.IEICE ELECTRONICS EXPRESS.2015,12 (20)
- [12]Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm.CHINESE PHYSICS LETTERS.2015,32 (11)
- [13]Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys.CHINESE PHYSICS B.2015,24 (1)
- [14]AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer.CHINESE PHYSICS LETTERS.2015,32 (7)
- [15]Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition.Applied Physics Letters.2014,105 (22)
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