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郑雪峰
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Professor
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Paper Publications
The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes.CHINESE PHYSICS LETTERS.2016,33(11)
Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress.CHINESE PHYSICS B.2015,24(1)
Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation.CHINESE PHYSICS B.2015,24(2)
Patents
一种基于电容结构的HEMT栅泄漏电流分离结构与方法
HEMT器件栅泄漏电流中台面泄漏电流的测试方法
测试HEMT器件体泄漏电流和表面泄漏电流的方法
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