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个人信息：Personal Information
教授
性别：男
毕业院校：beoplay体育提现
学历：博士研究生毕业
学位：博士学位
在职信息：返聘
所在单位：集成电路学部
学科：测试计量技术及仪器 集成电路系统设计 微电子学与固体电子学
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论文成果
当前位置: 中文主页 >> bepaly手机下载 >> 论文成果- [1]Temperature monitor suitable for UHF RFID.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2014,41 (6):65-70
- [2]Compact dual ports handheld RFID reader antenna with high isolation.INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING.2015,25 (6):548-555
- [3]A 0.5-V 5.9-fJ/Conversion-Step SAR ADC in 0.18-mu m CMOS.IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING.2016,11 (4):467-473
- [4]Design of a novel dual ports antenna to enhance sensitivity of handheld RFID reader.INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES.2016,8 (2):369-377
- [5]Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket.MICROELECTRONICS RELIABILITY.2016,59 :30-36
- [6]New type of low-power exponential current generator for VGA.Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of Ch.2014,43 (2):282-286
- [7]Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate.INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS.2016,29 (2):230-242
- [8]Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor wit.International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.2016,29 (2):230-242
- [9]1/f Noise Model for NPN Bipolar Junction Transistors Based on Radiation Effect.IEEE TRANSACTIONS ON NUCLEAR SCIENCE.2015,62 (4):1682-1688
- [10]A 2-22 GHz low-imbalanced active balun in 0.18 mu m SiGe BiCMOS technology.AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS.2016,70 (10):1367-1373
- [11]A Novel Dual Ports Antenna for Handheld RFID Reader Applications.INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND##MATERIALS.2015,45 (2):125-131
- [12]Compact antenna with modified L-shape feed line for dual band operation.INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS AND MECHANICS.2016,50 (1):1-10
- [13]Tunnel Dielectric Field-Effect Transistors with High Peak-to-Valley Current Ratio.Journal of Electronic Materials.2017,46 (2):1088-1092
- [14]Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model.ACTA PHYSICA SINICA.2015,64 (13)
- [15]Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates.CHINESE PHYSICS B.2016,25 (4)
- [16]On-Chip Measurement of Quality Factor Implemented in 0.35 mu m CMOS.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS.2016,25 (8)
- [17]Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor.CHINESE PHYSICS B.2016,25 (2)
- [18]A novel CMOS active polyphase filter with wideband and low-power for GNSS receiver.IEICE ELECTRONICS EXPRESS.2016,13 (7)
- [19]A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes.IEEE Transactions on Magnetics.2014,50 (4)
- [20]Impact of interface traps on direct and alternating current in tunneling field-effect transistors.Journal of Electrical and Computer Engineering.2015,2015