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2. Suppressing Halide Phase Segregation in CsPbIBr2 Films by Polymer Modification for Hysteresis-Less All-Inorganic Perovskite Solar Cells.ACS APPLIED MATERIALS & INTERFACES. 2021. 13. 2. Chai, Wenming; Ma, Junxiao; Zhu, Weidong; Chen, Dazheng; Xi, He; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
3. Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method.ELECTROCHIMICA ACTA. 2021. 366. Zhang, Yaping; Bu, Yuyu; Jiang, Fengqiu; Li, Huan; Chen, Xi; Ao, Jin-Ping
4. Two-dimensional carbon allotropes with tunable direct band gaps and high carrier mobility.APPLIED SURFACE SCIENCE. 2021. 537. Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
5. 97.3% Pb-Reduced CsPb1-xGexBr3 Perovskite with Enhanced Phase Stability and Photovoltaic Performance through Surface Cu Doping.JOURNAL OF PHYSICAL CHEMISTRY LETTERS. 2021. 12. 3. Wang, Lu; Su, Jie; Guo, Yujia; Lin, Zhenhua; Hao, Yue; Chang, Jingjing
6. The forbidden band and size selectivity of acoustic radiation force trapping.ISCIENCE. 2021. 24. 1. Li, Zhaoxi; Wang, Danfeng; Fei, Chunlong; Qiu, Zhihai; Hou, Chenxue; Wu, Runcong; Li, Di; Zhang, Qidong; Chen, Dongdong; Chen, Zeyu; Feng, Wei; Yang, Yintang
7. ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior.NANOSCALE RESEARCH LETTERS. 2021. 16. 1. Zhang, Siqing; Liu, Huan; Zhou, Jiuren; Liu, Yan; Han, Genquan; Hao, Yue
8. Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect.NANOSCALE RESEARCH LETTERS. 2021. 16. 1. Wang, Xiao; Ye, Qiong; Bai, Li-Hua; Su, Xi; Wang, Ting-Ting; Peng, Tao-Wei; Zhai, Xiao-Qi; Huo, Yi; Wu, Hao; Liu, Chang; Bu, Yu-Yu; Ma, Xiao-Hua; Hao, Yue; Ao, Jin-Ping
9. Cloud-based RFID mutual authentication scheme for efficient privacy preserving in IoV.JOURNAL OF THE FRANKLIN INSTITUTE-ENGINEERING AND APPLIED MATHEMATICS. 2021. 358. 1. Fan, Kai; Jiang, Wei; Luo, Qi; Li, Hui; Yang, Yintang
10. Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer.RESULTS IN PHYSICS. 2021. 20. Ren, Zeyang; Liang, Zhenfang; Su, Kai; Xing, Yufei; Zhang, Jinfeng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
11. Enhanced Prediction Performance of a Neuromorphic Reservoir Computing System Using a Semiconductor Nanolaser With Double Phase Conjugate Feedbacks.JOURNAL OF LIGHTWAVE TECHNOLOGY. 2021. 39. 1. Guo, Xing Xing; Xiang, Shui Ying; Qu, Yan; Han, Ya Nan; Wen, Ai Jun; Hao, Yue
12. A high operating voltage micro-supercapacitor based on the interlamellar modulation type Ti(3)C(2)T(x)MXene.NANOTECHNOLOGY. 2021. 32. 3. Feng, Xin; Ning, Jing; Xia, Maoyang; Guo, Haibin; Zhou, Yu; Wang, Dong; Zhang, Jincheng; Hao, Yue
13. Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM.APPLIED PHYSICS LETTERS. 2021. 118. 1. Duan, Yiwei; Gao, Haixia; Guo, Jingshu; Yang, Mei; Yu, Zhenxi; Shen, Xuping; Wu, Shuliang; Sun, Yuxin; Ma, Xiaohua; Yang, Yintang
14. Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure.MATERIALS. 2021. 14. 1. Zhao, Ying; Xu, Shengrui; Tao, Hongchang; Zhang, Yachao; Zhang, Chunfu; Feng, Lansheng; Peng, Ruoshi; Fan, Xiaomeng; Du, Jinjuan; Zhang, Jincheng; Hao, Yue
15. Compact Bandpass Filter and Diplexer With Wide-Stopband Suppression Based on Balanced Substrate-Integrated Waveguide.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 2021. 69. 1. Liu, Xiaoxian; Zhu, Zhangming; Liu, Yang; Lu, Qijun; Yin, Xiangkun; Yang, Yintang
16. A Vertically Stacked Nanosheet Gate-All-Around FET for Biosensing Application.IEEE ACCESS. 2021. 9. Li, Cong; Liu, Feichen; Han, Ru; Zhuang, Yiqi
17. Effects of Carbon Impurity in Monocrystalline Silicon on Electrical Properties and the Mechanism Analysis of PIN Rectifier Diodes.IEEE ACCESS. 2021. 9. Sun, Xinli; Guo, Hui; Zhang, Yuming; Li, Xingpeng; Cao, Zhen
18. A Sub-200nW All-in-One Bandgap Voltage and Current Reference Without Amplifiers.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2021. 68. 1. Huang, Wenbin; Liu, Lianxi; Zhu, Zhangming
19. Temperature-dependent characteristics of Schottky barrier diode on heterogeneous beta-Ga2O3((2) over-bar01)-Al2O3-Si Substrate.JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2021. 54. 3. Wang, Yibo; Xu, Wenhui; Han, Genquan; You, Tiangui; Mu, Fengwen; Hu, Haodong; Liu, Yan; Zhang, Xinchuang; Huang, Hao; Suga, Tadatomo; Ou, Xin; Ma, Xiaohua; Hao, Yue
20. Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 1. Liu, Yu-Chen; Li, Yang; Yang, Lin-An; Lu, Yang; Ma, Xiaohua; Ao, Jin-Ping; Hao, Yue
21. Three Orders of Reverse Leakage Reduction by Using Supercritical CO2 Nitriding Process on GaN Quasi-Vertical Schottky Barrier Diode.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 1. Liu, Jiang; Yang, Mingchao; Liu, Cheng; Liu, Weihua; Han, Chuanyu; Zhang, Yong; Geng, Li; Hao, Yue
22. Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor.MICROMACHINES. 2021. 12. 1. Chong, Chen; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Xie, Haiwu
23. Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes.JOURNAL OF APPLIED PHYSICS. 2021. 129. 1. Zhang, HePeng; Xue, JunShuai; Fu, YongRui; Li, LanXing; Sun, ZhiPeng; Yao, JiaJia; Liu, Fang; Zhang, Kai; Ma, XiaoHua; Zhang, JinCheng; Hao, Yue
24. Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2021. 9. Zhou, Yuwei; Zhu, Jiejie; Mi, Minhan; Zhang, Meng; Wang, Pengfei; Han, Yutong; Wu, Sheng; Liu, Jielong; Zhu, Qing; Chen, Yilin; Hou, Bin; Ma, Xiaohua; Hao, Yue
25. Novel Si/Sic Heterojunction Lateral Double-Doffused Metal Oxide Semiconductor With SIPOS Field PLate by Simulation Study.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2021. 9. Duan, Baoxing; Xue, Shaoxuan; Huang, Xin; Yang, Yintang
26. Novel Low Loss LIGBT With Assisted Depletion N-Region and P-Buried Layer.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2021. 9. Sun, Licheng; Duan, Baoxing; Yang, Yintang
27. 1.3 kV Reverse-Blocking AlGAN/GaN MISHEMT With Ultralow Turn-On voltage 0.25 V.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2021. 9. Wang, Haiyong; Mao, Wei; Zhao, Shenglei; Du, Ming; Zhang, Yachao; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
28. Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2021. 9. He, Fuchao; Qin, Yu; Wang, Yifei; Lin, Zhenhua; Su, Jie; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
29. In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2021. 9. Zhang, Weihang; Fu, Liyu; Liu, Xi; Zhang, Jincheng; Zhao, Shenglei; Wang, Zhizhe; Hao, Yue
30. Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write-Read Operations in 3-D NAND Flash.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2021. 9. Wu, Dan; You, Hailong; Wang, Xiaoguang; Zhong, Shujing; Sun, Qi
31. Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2021. 36. 1. Yang, Wen-Lu; Yang, Lin-An; Zhang, Xiao-Yu; Li, Yang; Ma, Xiao-Hua; Hao, Yue
32. Effects of Total Dose Radiation on Single Event Effect of the Uniaxial Strained Si Nano NMOSFET.IETE JOURNAL OF RESEARCH. 2021. Hao, Minru; Zhang, Yan; Shao, Min; Chen, Guoxiang; Wang, Bin
33. Simulation research of high-efficiency unidirectional vertical coupling grating couplers for optical through-silicon vias in 3D optoelectronic integrated circuits.OPTICS COMMUNICATIONS. 2021. 479. Zhang, Junqin; Zhang, Ci; Liang, Guoxian; Yang, Yintang
34. Flat-High-Gain Design and Noise Optimization in SiGe Low-Noise Amplifier for S-K Band Applications.CIRCUITS SYSTEMS AND SIGNAL PROCESSING. 2021. 40. 6. Li, Zhenrong; Liu, Boyu; Duan, Yiming; Wang, Zeyuan; Li, Zhen; Zhuang, Yiqi
35. A 21.6-30.3 GHz injection-locked frequency tripler with Darlington injection for 5G communication systems.INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS. 2021. 49. 2. Li, Zhen; Li, Zhenrong; Quan, Xing; Wang, Zeyuan; Zhuang, Yiqi
36. A fast small signal modeling method for GaN HEMTs. SOLID-STATE ELECTRONICS. 2021. 175. Zhao, Ziyue; Lu, Yang; Yi, Chupeng; Chen, Yilin; Cai, Xiaolong; Zhang, Yu; Duan, Xiangyang; Ma, Xiaohua; Hao, Yue
37. Model for Rapidly Computing the Highest Temperature Based on Fermat Point in Chips.JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER. 2021. 35. 1. Song, Dong-Liang; Dong, Gang; Yao, Yi-Tong; Yang, Yin-Tang; Wang, Yang
38. Wideband air-filled ridge substrate-integrated waveguide.INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. 2021. 31. 4. Zhao, Xiao-Fei; Deng, Jing-Ya; Wang, Rui; Wang, Yong-Jie; Sun, Dongquan; Yin, Jia-Yuan; Yong, Ting; Guo, Li-Xin; Ma, Xiao-Hua
39. A 2.6 G Omega, 1.4 mu V-rms current-reuse instrumentation amplifier for wearable electrocardiogram monitoring.MICROELECTRONICS JOURNAL. 2021. 107. Cao, Wenfei; Liu, Yi; Liu, Shubin; Wang, Ling; Ma, Rui; Zhu, Zhangming
40. Characterization method of IGBT comprehensive health index based on online status data.MICROELECTRONICS RELIABILITY.2021. 116. Zhang, Jinli; Hu, Jinbao; You, Hailong; Jia, Renxu; Wang, Xiaowen; Zhang, Xiaowen
41. Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node*.CHINESE PHYSICS B. 2021. 30. 1. Yang, Cui; Peng, Guo-Liang; Mao, Wei; Zheng, Xue-Feng; Wang, Chong; Zhang, Jin-Cheng; Hao, Yue
42. Study of Si-Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate.SCIENCE OF ADVANCED MATERIALS. 2021. 13. 1. Zhang, Chao; Song, Jianjun; Zhang, Jie
43. 395 nm Light-Emitting Diode with 647 mW Output Power Realized Using a Double p-Type Aluminum Composition Gradient with Polarization-Induced Hole Doping.INTEGRATED FERROELECTRICS. 2021. 213. 1. Yue, Wenkai; Li, Zhimin; Li, Peixian; Zhou, Xiaowei; Dong, Haichen; Wang, Yanli; Wu, Jinxing; Luo, Xiaoshun; Bai, Junchun
44. Ammonia-assisted synthesis of gypsophila-like 1T-WSe2/graphene with enhanced potassium storage for all-solid-state supercapacitor.CHEMICAL ENGINEERING JOURNAL. 2021. 405. Xia, Maoyang; Ning, Jing; Wang, Dong; Feng, Xin; Wang, Boyu; Guo, Haibin; Zhang, Jincheng; Hao, Yue
45. Ultrawide-bandgap semiconductor AlN crystals: growth and applications.JOURNAL OF MATERIALS CHEMISTRY C. 2021. 9. 6. Yu, Ruixian; Liu, Guangxia; Wang, Guodong; Chen, Chengmin; Xu, Mingsheng; Zhou, Hong; Wang, Tailin; Yu, Jiaoxian; Zhao, Gang; Zhang, Lei
46. Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials.INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES. 2021. 22. 3. Han, Tao; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Kun; Li, Zhandong
47. Fabrication of 1D/2D CdS/CoSx direct Z-scheme photocatalyst with enhanced photocatalytic hydrogen evolution performance.INTERNATIONAL JOURNAL OF HYDROGEN ENERGY. 2021. 46. 14. Li, Weibing; Fang, Ke; Zhang, Yanguang; Chen, Zhiwei; Wang, Lei; Bu, Yuyu
48. Preparation and photoluminescence of self-standing nanoporous InGaN/GaN MQWs via UV-assisted electrochemical etching.MICROPOROUS AND MESOPOROUS MATERIALS. 2021. 315. Cao, Dezhong; Guan, Tongle; Wang, Bo; Xu, Yan; Ma, Xiaohua
49. Atomically control of surface morphology in Ga2O3 epi-layers with high doping activation ratio.JOURNAL OF ALLOYS AND COMPOUNDS. 2021. 855. Wang, Dangpo; Li, Jianing; Jiao, Anning; Zhang, Xinchuang; Lu, Xiaoli; Ma, Xiaohua; Hao, Yue
50. Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN.JOURNAL OF ALLOYS AND COMPOUNDS. 2021. 853. Chen, Jiabo; Bian, Zhaoke; Liu, Zhihong; Zhu, Dan; Duan, Xiaoling; Wu, Yinhe; Jia, Yanqing; Ning, Jing; Zhang, Jincheng; Hao, Yue
51. Preparation and improved photoelectrochemical properties of InGaN/GaN photoanode with mesoporous GaN Distributed Bragg reflectors.JOURNAL OF ALLOYS AND COMPOUNDS. 2021. 853. Cao, Dezhong; Xiao, Hongdi; Yang, Xiaokun; Ma, Xiaohua
52. Reducing the acceptor levels of p-type beta-Ga2O3 by (metal, N) co-doping approach.JOURNAL OF ALLOYS AND COMPOUNDS. 2021. 854. Yan, Chongyong; Su, Jie; Wang, Yifei; Lin, Zhenhua; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
53. Sodium ion-intercalated nanoflower 1T-2H MoSe2-graphene nanocomposites as electrodes for all-solid-state supercapacitors.JOURNAL OF ALLOYS AND COMPOUNDS. 2021. 853. Guo, Haibin; Ning, Jing; Wang, Boyu; Feng, Xin; Xia, Maoyang; Wang, Dong; Jia, Yanqing; Zhang, Jincheng; Hao, Yue
54. Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs.NANOSCALE RESEARCH LETTERS. 2021. 16. 1. Jia, Xiaole; Hu, Haodong; Han, Genquan; Liu, Yan; Hao, Yue
55. Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor.NANOSCALE RESEARCH LETTERS. 2021. 16. 1. Chong, Chen; Liu, Hongxia; Wang, Shulong; Chen, Shupeng
56. Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy.NANOSCALE ADVANCES. 2021. 3. 4. Wang, Liming; Zhang, Yichi; Sun, Hao; You, Jie; Miao, Yuanhao; Dong, Zuoru; Liu, Tao; Jiang, Zuimin; Hu, Huiyong
57. A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns.SCIENCE CHINA-INFORMATION SCIENCES. 2021. 64. 2. Zhang, Yahui; Xiang, Shuiying; Guo, Xingxing; Wen, Aijun; Hao, Yue
58. GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. 2021. 31. 2. Xie, Hanlin; Liu, Zhihong; Hu, Wenrui; Zhong, Zheng; Lee, Kenneth; Guo, Yong-Xin; Ng, Geok Ing
59. Research on Schottky diode with high rectification efficiency for relatively weak energy wireless harvesting.SUPERLATTICES AND MICROSTRUCTURES. 2021. 150. Liu, Weifeng; Wang, Yueyu; Song, Jianjun
60. Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices.ELECTRONICS. 2021. 10. 3. Han, Guodu; Chen, Yanning; Liu, Hongxia; Wang, Dong; Qiao, Rundi
61. Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2021. 36. 2. Zhang, Xiao-Yu; Yang, Lin-An; Yang, Wen-lu; Li, Yang; Ma, Xiao-Hua; Hao, Yue
62. Area-Efficient Extended 3-D Inductor Based on TSV Technology for RF Applications.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. 2021. 29. 2. Qu, Chenbing; Zhu, Zhangming; En, Yunfei; Wang, Liwei; Liu, Xiaoxian
63. Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2021. 218. 7. Liu, Kai; Wang, Chong; Zheng, Xuefeng; Ma, Xiaohua; Zhao, Yaopeng; Li, Ang; He, Yunlong; Mao, Wei; Hao, Yue
64. Carbon-based, all-inorganic, lead-free Ag2BiI5 rudorffite solar cells with high photovoltages.SOLID-STATE ELECTRONICS. 2021. 176. He, Fengqin; Wang, Qian; Zhu, Weidong; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
65. Wideband circularly polarized cross-dipole antenna with parasitic metallic cuboids.INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. 2021. 31. 5. Wang, Lei; Zhu, Zhang-ming; En, Yun-fei
66. Gamma-Irradiation-Accelerated Degradation in AlGaN-Based UVC LEDs Under Electrical Stress.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2021. 68. 2. Wang, Yingzhe; Zheng, Xuefeng; Zhu, Jiaduo; Cao, Yanrong; Wang, Xiaohu; Zhu, Tian; Lv, Ling; Mao, Wei; Wang, Chong; Ma, Xiaohua; Li, Peixian; Hua, Ning; Chen, Kai; Wang, Maosen; Zhang, Quanyuan; Hao, Yue
67. A DFT study on physical properties of III-V compounds (AlN, GaN, AlP, and GaP) in the P3(1)21 phase.MATERIALS RESEARCH EXPRESS. 2021. 8. 2. Zhang, Zheren; Chai, Changchun; Song, Yanxing; Kong, Linchun; Yang, Yintang
68. Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 degrees C*.CHINESE PHYSICS B. 2021. 30. 2. Liu, Si-Cheng; Tang, Xiao-Yan; Song, Qing-Wen; Yuan, Hao; Zhang, Yi-Meng; Zhang, Yi-Men; Zhang, Yu-Ming
69. Novel fast-switching LIGBT with P-buried layer and partial SOI*.CHINESE PHYSICS B. 2021. 30. 2. Wang, Haoran; Duan, Baoxing; Sun, Licheng; Yang, Yintang
70. Investigation on mechanisms of current saturation in gateless AlGaN/GaN heterostructure device.JAPANESE JOURNAL OF APPLIED PHYSICS. 2021. 60. 2. Tao, Qianqian; Wang, Jinyan; Zhang, Bin; Wang, Xin; Li, Mengjun; Cao, Qirui; Wu, Wengang; Ma, Xiaohua
71. Synergistic Interface Layer Optimization and Surface Passivation with Fluorocarbon Molecules toward Efficient and Stable Inverted Planar Perovskite Solar Cells.Research (Washington, D.C.). 2021. 2021. Zhou, Long; Su, Jie; Lin, Zhenhua; Guo, Xing; Ma, Jing; Li, Tao; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
72. Achieving high piezoelectric performances with enhanced domain-wall contributions in < 001 >-textured Sm-modified PMN-29PT ceramics.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY. 2021. 41. 4. Zheng, Kun; Quan, Yi; Zhuang, Jian; Zhao, Jinyan; Ren, Wei; Wang, Lingyan; Wang, Zhe; Niu, Gang; Fei, Chunlong; Jiang, Zhishui; Wen, Li
73. High-Efficiency (> 14%) and Air-Stable Carbon-Based, All-Inorganic CsPbI2Br Perovskite Solar Cells through a Top-Seeded Growth Strategy.ACS ENERGY LETTERS. 2021. 6. 4. Zhu, Weidong; Chai, Wenming; Chen, Dandan; Ma, Junxiao; Chen, Dazheng; Xi, He; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
74. Enhanced Efficiency and Stability of All-Inorganic CsPbI2Br Perovskite Solar Cells by Organic and Ionic Mixed Passivation.ADVANCED SCIENCE. 2021. 8. 17. He, Jian; Su, Jie; Lin, Zhenhua; Ma, Jing; Zhou, Long; Zhang, Siyu; Liu, Shengzhong; Chang, Jingjing; Hao, Yue
75. Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification.IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS. 2021. 32. 6. Xiang, Shuiying; Ren, Zhenxing; Song, Ziwei; Zhang, Yahui; Guo, Xingxing; Han, Genquan; Hao, Yue
76. Emergent Midgap Excitons in Large-Size Freestanding 2D Strongly Correlated Perovskite Oxide Films.ADVANCED OPTICAL MATERIALS. 2021. 9. 10. Zhang, Yuguo; Ma, Haijiao Harsan; Gan, Xin; Hui, Yupeng; Zhang, Yueying; Su, Jie; Yang, Ming; Hu, Zhaosheng; Xiao, Juanxiu; Lu, Xiaoli; Zhang, Jincheng; Hao, Yue
77. Annealing-Free, High-Performance Perovskite Solar Cells by Controlling Crystallization via Guanidinium Cation Doping.SOLAR RRL. 2021. 5. 7. Dong, Hang; Pang, Shangzheng; He, Fengqin; Yang, Haifeng; Zhu, Weidong; Chen, Dazheng; Xi, He; Zhang, Jincheng; Hao, Yue; Zhang, Chunfu
78. An Exploration of All-Inorganic Perovskite/Gallium Arsenide Tandem Solar Cells.SOLAR RRL. 2021. 5. 7. Wang, Jiaping; Zhao, Peng; Hu, Ying; Lin, Zhenhua; Su, Jie; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
79. Van der Waals contact between 2D magnetic VSe2 and transition metals and demonstration of high-performance spin-field-effect transistors.SCIENCE CHINA-MATERIALS. 2021. Zhu, Jiaduo; Chen, Xing; Shang, Wei; Ning, Jing; Wang, Dong; Zhang, Jincheng; Hao, Yue
80. Ultrahigh-Performance Solar-Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline beta-Ga2O3 Film Grown by Vacuumfree, Low-Cost Mist Chemical Vapor Deposition.ADVANCED MATERIALS TECHNOLOGIES. 2021. 6. 6. Xu, Yu; Cheng, Yaolin; Li, Zhe; Chen, Dazheng; Xu, Shengrui; Feng, Qian; Zhu, Weidong; Zhang, Yachao; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
81. The fabrication of a photo-carrier transfer channel for a near infrared up-conversion coupled photocathode via a sandwich-like nanostructure.JOURNAL OF MATERIALS CHEMISTRY C. 2021. 9. 26. Chen, Xi; Bu, Yuyu; Li, Huan; Wang, Xiao; Ao, Jin-Ping
82. Intrinsic auxeticity and negative piezoelectricity in two-dimensional group-IV dipnictide monolayers with in-plane anisotropy.JOURNAL OF MATERIALS CHEMISTRY C. 2021. 9. 18. Zhao, Yue; Gou, Gaoyang; Lu, Xiaoli; Hao, Yue
83. Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits.JOURNAL OF MATERIALS CHEMISTRY C. 2021. Liang, Kun; Ren, Huihui; Li, Dingwei; Wang, Yan; Tang, Yingjie; Zhao, Momo; Wang, Hong; Li, Wenbin; Zhu, Bowen
84. Experimental demonstration of pyramidal neuron-like dynamics dominated by dendritic action potentials based on a VCSEL for all-optical XOR classification task.PHOTONICS RESEARCH. 2021. 9. 6. Zhang, Yahui; Xiang, Shuiying; Cao, Xingyu; Zhao, Shihao; Guo, Xingxing; Wen, Aijun; Hao, Yue
85. Delay-weight plasticity-based supervised learning in optical spiking neural networks.PHOTONICS RESEARCH. 2021. 9. 4. Han, Yanan; Xiang, Shuiying; Ren, Zhenxing; Fu, Chentao; Wen, Aijun; Hao, Yue
86. Achieving high electric outputs from low-frequency motions through a double-string-spun rotor.MECHANICAL SYSTEMS AND SIGNAL PROCESSING. 2021. 155. Fan, Kangqi; Xia, Pengwei; Zhang, Yiwei; Qu, Hengheng; Liang, Geng; Wang, Fei; Zuo, Lei
87. Improved Doping and Optoelectronic Properties of Zn-Doped Cspbbr(3) Perovskite through Mn Codoping Approach.JOURNAL OF PHYSICAL CHEMISTRY LETTERS. 2021. 12. 13. Guo, YuJia; Su, Jie; Wang, Lu; Lin, Zhenhua; Hao, Yue; Chang, Jingjing
88. Demonstration of beta-Ga2O3 Junction Barrier Schottky Diodes With a Baligas Figure of Merit of 0.85 GWcm(2) or a 5A700 V Handling Capabilities.IEEE TRANSACTIONS ON POWER ELECTRONICS. 2021. 36. 6. Lv, Yuanjie; Wang, Yuangang; Fu, Xingchang; Dun, Shaobo; Sun, Zhaofeng; Liu, Hongyu; Zhou, Xingye; Song, Xubo; Dang, Kui; Liang, Shixiong; Zhang, Jincheng; Zhou, Hong; Feng, Zhihong; Cai, Shujun; Hao, Yue
89. Simple and Convenient Interface Modification by Nanosized Diamond for Carbon Based All-Inorganic CsPbIBr2 Solar Cells.ACS APPLIED ENERGY MATERIALS. 2021. 4. 6. Chen, Dazheng; Tian, Baichuan; Fan, Gang; Wang, Yilin; Zhu, Weidong; Ren, Zeyang; Xi, He; Su, Kai; Zhang, Jinfeng; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
90. Improving perovskite solar cell performance by compositional engineering via triple-mixed cations.SOLAR ENERGY. 2021. 220. Wang, Shaoxi; Pang, Shangzheng; Chen, Dazheng; Zhu, Weidong; Xi, He; Zhang, Chunfu
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120. Novel Suspended-Line Gap Waveguide Packaged With Stacked-Mushroom EBG Structures.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 2021. 69. 5. Zhao, Xiao-Fei; Deng, Jing-Ya; Yin, Jia-Yuan; Sun, Dongquan; Guo, Li-Xin; Ma, Xiao-Hua; Hao, Yue
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127. An X-Band 5-Bit Active Phase Shifter Based on a Novel Vector-Sum Technique in 0.18 mu m SiGe BiCMOS.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2021. 68. 6. Li, Zhenrong; Qiao, Jia; Zhuang, Yiqi
128. Hardware Trojan Designs Based on High-Low Probability and Partitioned Combinational Logic With a Malicious Reset Signal.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2021. 68. 6. Shi, Jiangyi; Zhang, Xinyuan; Ma, Peijun; Pan, Weitao; Li, Pengfei; Tang, Zhengguang
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132. A Highly Efficient Annealing Process With Supercritical N2O at 120 degrees C for SiO2/4H-SiC Interface.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 4. Wang, Menghua; Yang, Mingchao; Liu, Weihua; Qi, Jinwei; Yang, Songquan; Han, Chuanyu; Geng, Li; Hao, Yue
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134. Effect of Fixed Charges at Interface Between InP and Bonding Layer on Heterogeneous Integration of InP HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 5. Chen, Yao; Yang, Lin-An; Jin, Zhi; Su, Yong-Bo; Hao, Yue
135. Comprehensive Annealing Effects on AlGaN/GaN Schottky Barrier Diodes With Different Work-Function Metals.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 6. Zhang, Tao; Wang, Yi; Zhang, Yanni; Lv, Yueguang; Ning, Jing; Zhang, Yachao; Zhou, Hong; Duan, Xiaoling; Zhang, Jincheng; Hao, Yue
136. Volatile and Nonvolatile Memory Operations Implemented in a Pt/HfO/Ti Memristor.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 4. Wu, Lei; Liu, Hongxia; Lin, Jinfu; Wang, Shulong
137. Theoretical Study of Negative Capacitance FinFET With Quasi-Antiferroelectric Material.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 6. Zhang, Fan; Peng, Yue; Deng, Xinran; Huo, Jiali; Liu, Yan; Han, Genquan; Wu, Zhenhua; Yin, Huaxiang; Hao, Yue
138. Novel Snapback-Free SOI LIGBT With Shorted Anode and Trench Barriers.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 5. Sun, Licheng; Duan, Baoxing; Yang, Yintang
139. Experimental Results for AlGaN/GaN HEMTs Improving Breakdown Voltage and Output Current by Electric Field Modulation.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 5. Duan, Baoxing; Yang, Luoyun; Wang, Yandong; Yang, Yintang
140. Accumulation-Mode Lateral Double-Diffused MOSFET Breaking Silicon Limit by Eliminating Dependence of Specific ON-Resistance on Doping Concentration.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 5. Wang, Yandong; Duan, Baoxing; Song, Haitao; Yang, Yintang
141. Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 4. Wang, Pengfei; Ma, Xiaohua; Mi, Minhan; Zhang, Meng; Zhu, Jiejie; Zhou, Yuwei; Wu, Sheng; Liu, Jielong; Yang, Ling; Hou, Bin; Hao, Yue
142. Characteristics of InAs/GaSb Line-Tunneling FETs With Buried Drain Technique.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 4. Lu, Bin; Cui, Yan; Guo, Aixin; Wang, Dawei; Lv, Zhijun; Zhou, Jiuren; Miao, Yuanhao
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144. Single-Event Damage-Induced Gate-Leakage Mechanisms in AlGaN/GaN High-Electron-Mobility Transistors.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2021. 68. 6. Yue, Shaozhong; Zhang, Zhangang; Chen, Ziwen; Zheng, Xuefeng; Wang, Lei; Huang, Yiming; Huang, Yun; Peng, Chao; Lei, Zhifeng
145. A Robust Segmentation Method Based on Improved U-Net.NEURAL PROCESSING LETTERS. 2021. 53. 4. Sha, Gang; Wu, Junsheng; Yu, Bin
146. A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region.MICROMACHINES. 2021. 12. 5. Jia, Hujun; Dong, Mengyu; Wang, Xiaowei; Zhu, Shunwei; Yang, Yintang
147. Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors.MICROMACHINES. 2021. 12. 6. Chong, Chen; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Xie, Haiwu
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149. An Efficient Optimization Design of Liquid Lens for Acoustic Pattern Control.IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL. 2021. 68. 5. Li, Zhaoxi; Guo, Rong; Chen, Dongdong; Fei, Chunlong; Yang, Xiao; Li, Di; Zheng, Chenxi; Chen, Jun; Wu, Runcong; Feng, Wei; Xu, Zhuo; Yang, Yintang
150. Lead-Free KNN-Based Textured Ceramics for High-Frequency Ultrasonic Transducer Application.IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL. 2021. 68. 5. Quan, Yi; Fei, Chunlong; Ren, Wei; Wang, Lingyan; Niu, Gang; Zhao, Jinyan; Zhuang, Jian; Zhang, Junshan; Zheng, Kun; Lin, Pengfei; Sun, Xinhao; Chen, Qiang; Ye, Zuo-Guang; Karaki, Tomoaki
151. Research on GaN-Based RF Devices: High-Frequency Gate Structure Design, Submicrometer-Length Gate Fabrication, Suppressed SCE, Low Parasitic Resistance, Minimized Current Collapse, and Lower Gate Leakage.IEEE MICROWAVE MAGAZINE. 2021. 22. 4. Hao, Yue; Ma, Xiaohua; Mi, Minhan; Yang, Lin-An
152. The dual-suppression of peak electric field in AlGaN/GaN HEMT with sandwich structure.SUPERLATTICES AND MICROSTRUCTURES. 2021. 152. Zou, Hao; Yang, Lin-An; Ma, Xiao-Hua; Hao, Yue
153. Liquid lens with adjustable focus for ultrasonic imaging.APPLIED ACOUSTICS. 2021. 175. Li, Zhaoxi; Guo, Rong; Fei, Chunlong; Li, Di; Chen, Dongdong; Zheng, Chenxi; Wu, Runcong; Feng, Wei; Yang, Yintang
154. Target attention deep neural network for infrared image enhancement.INFRARED PHYSICS & TECHNOLOGY. 2021. 115. Wang, Dong; Lai, Rui; Guan, Juntao
155. Special issue on Perovskite materials.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2021. 32. 10. Wu, Yan; Wang, Baoyuan; Chang, Jingjing
156. Ultra High Q and Widely Tunable Mie Resonance Nanofilter at Telecom Wavelengths.IEEE PHOTONICS JOURNAL. 2021. 13. 3. Yao, Danyang; Zhang, Yong; Huang, Yan; Liu, Yan; Han, Genquan; Hao, Yue
157. Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.IEEE PHOTONICS JOURNAL. 2021. 13. 3. Tao, Hongchang; Xu, Shengrui; Fan, Xiaomeng; Zhang, Jincheng; Hao, Yue
158. Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer.IEEE PHOTONICS JOURNAL. 2021. 13. 2. Wu, Jinxing; Li, Peixian; Zhou, Xiaowei; Wu, Jiangtao; Hao, Yue
159. Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2021. 36. 4. Zhang, Tao; Zhang, Jincheng; Zhang, Weihang; Zhang, Yachao; Duan, Xiaoling; Ning, Jing; Hao, Yue
160. Effect of jagged field plate structures on DC and RF performance of AlGaN/GaN HEMTs.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2021. 36. 5. Zou, Hao; Yang, Lin-an; Ma, Xiao-hua; Hao, Yue
161. GaN FinFETs and trigate devices for power and RF applications: review and perspective.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2021. 36. 5. Zhang, Yuhao; Zubair, Ahmad; Liu, Zhihong; Xiao, Ming; Perozek, Joshua; Ma, Yunwei; Palacios, Tomas
162. Photon redistribution of two-terminal perovskite/Si tandem solar cells induced by the optical coupling layer for higher power conversion efficiency.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2021. 36. 6. Liu, Chenbo; Xi, He; Yan, Honghua; Yang, Haifeng; Chen, Dazheng; Dong, Hang; Zhu, Weidong; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
163. A latch-up-free LVTSCR with improved overshoot characteristic for ESD protection in 40 nm CMOS process.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2021. 36. 6. Chen, Rui-Bo; Liu, Hong-Xia; Guo, Dan; Huang, Wei; Huang, Xiao-Zong; Liu, Zhiwei
164. High photocatalytic performance of g-C3N4/WS2 heterojunction from first principles.CHEMICAL PHYSICS. 2021. 545. Jin, Qiu; Dai, Xianying; Song, Jianjun; Pu, Kaiwen; Wu, Xiaolian; An, Jiadai; Zhao, Tianlong
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166. Review-Ti3C2Tx MXene: An Emerging Two-Dimensional Layered Material in Water Treatment.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2021. 10. 4. Wang, Yijin; Niu, Bingqiang; Zhang, Xingmao; Lei, Yimin; Zhong, Peng; Ma, Xiaohua
167. LET-dependent model of single-event effects in MOSFETs.JOURNAL OF COMPUTATIONAL ELECTRONICS. 2021. 20. 4. Xu, Changqing; Yi, Tengyue; Liu, Yi; Wu, Zhenyu; Shen, Chen; Yang, Yintang; Bai, Lu
168. Broadband crossed dipole circularly polarized antenna with parasitic round-metal pillars.INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. 2021. 31. 9. Wang, Lei; Zhu, Zhang-ming
169. A 18-23 GHz power amplifier design using approximate optimal impedance region approach for satellite downlink.INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. 2021. 31. 7. Yi, Chupeng; Lu, Yang; Zhao, Ziyue; Zhao, Bochao; Zhang, Hengshuang; Li, Peixian; Shi, Jiangyi; Ma, Xiaohua; Hao, Yue
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171. Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2021. 68. 6. Wan, Pengfei; Yang, Jianqun; Lv, Gang; Lv, Ling; Dong, Shangli; Li, Weiqi; Xu, Xiaodong; Peng, Chao; Zhang, Zhangang; Li, Xingji
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173. Structural, elastic, electronic, and anisotropic properties of Pbca-SiC and Pbcn-SiC.AIP ADVANCES. 2021. 11. 4. Kong, Linchun; Chai, Changchun; Song, Yanxing; Zhang, Wei; Zhang, Zheren; Yang, Yintang
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175. Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate*.CHINESE PHYSICS B. 2021. 30. 5. He, Yuan-Hao; Mao, Wei; Du, Ming; Peng, Zi-Ling; Wang, Hai-Yong; Zheng, Xue-Feng; Wang, Chong; Zhang, Jin-Cheng; Hao, Yue
176. Degradation of beta-Ga2O3 Schottky barrier diode under swift heavy ion irradiation.CHINESE PHYSICS B. 2021. 30. 5. Ai, Wen-Si; Liu, Jie; Feng, Qian; Zhai, Peng-Fei; Hu, Pei-Pei; Zeng, Jian; Zhang, Sheng-Xia; Li, Zong-Zhen; Liu, Li; Yan, Xiao-Yu; Sun, You-Mei
177. Design and simulation of AlN-based vertical Schottky barrier diodes*.CHINESE PHYSICS B. 2021. 30. 6. Su, Chun-Xu; Wen, Wei; Fei, Wu-Xiong; Mao, Wei; Chen, Jia-Jie; Zhang, Wei-Hang; Zhao, Sheng-Lei; Zhang, Jin-Cheng; Hao, Yue
178. A 6 to 12 GHz wideband analog voltage-controlled phase shifter with IL compensation architecture.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. 2021. 63. 9. Li, Zhenrong; Qiao, Jia; Wang, Yuxin; Wang, Zeyuan; Yu, Liyan; Zhuang, Yiqi
179. A Symmetric Group Control Dynamic Element Matching Method Applied in High Resolution SAR ADCs for Biomedical Applications.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. 2021. 30. 8. Chen, Yushi; Zhuang, Yiqi
180. A 32-GS/s Front-End Sampling Circuit Achieving > 39 dB SNDR for Time-Interleaved ADCs in 65-nm CMOS.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. 2021. 30. 8. Zhao, Lei; Li, Dengquan; Mao, Henghui; Ding, Ruixue; Zhu, Zhangming
181. An Optimization Method of Carrier Suppression for UHF RFID.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS. 2021. 30. 7. Liu, Qingshan; Chai, Changchun
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184. A high-power PCCM LED driver based on GaN eHEMT with hybrid dimming modes.CIRCUIT WORLD. 2021. Lin, Xixian; Zhang, Yuming; Zhang, Yimeng; Rong, Guangjian
185. Study on high temperature model based on the n-Channel planar 4H-SiC MOSFET.CIRCUIT WORLD. 2021. Tang, Zhenyu; Tang, Xiaoyan; Pu, Shi; Zhang, Yimeng; Zhang, Hang; Zhang, Yuming; Bo, Song
186. A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology.ACTA PHYSICA SINICA. 2021. 70. 10. Song Jian-Jun; Zhang Long-Qiang; Chen Lei; Zhou Liang; Sun Lei; Lan Jun-Feng; Xi Chu-Hao; Li Jia-Hao
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190. Frequency-reconfigurable wideband bandstop filter using varactor-based dual-slotted defected ground structure.IEICE ELECTRONICS EXPRESS. 2021. 18. 10. Zeng Zhibin; Bai Lei
191. Design and Process Optimization of a New Reaction Cavity for High-Temperature MOCVD AlGaN Growth.NANO. 2021. 16. 7. An, Jiadai; Dai, Xianying; Feng, Lansheng; Li, Zhiming; Zheng, Jieming; Song, Jianjun; Zhao, Tianlong
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194. Double Side Interfacial Optimization for Low-Temperature Stable CsPbI2Br Perovskite Solar Cells with High Efficiency Beyond 16%.ENERGY & ENVIRONMENTAL MATERIALS. 2021. Ma, Jing; Su, Jie; Lin, Zhenhua; He, Jian; Zhou, Long; Li, Tao; Zhang, Jincheng; Liu, Shengzhong; Chang, Jingjing; Hao, Yue
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196. A Support Vector Machine Classification-Based Signal Detection Method in Ultrahigh-Frequency Radio Frequency Identification Systems.IEEE TRANSACTIONS ON INDUSTRIAL INFORMATICS. 2021. 17. 7. Peng, Qi; Lin, Xiangchuan; Shi, Hao; Bao, Junlin; Li, Xiaoming; Zhuang, Yiqi
197. An eccentric mass-based rotational energy harvester for capturing ultralow-frequency mechanical energy.ENERGY CONVERSION AND MANAGEMENT.2021. 241. Fan, Kangqi; Hao, Jiayu; Wang, Chenyu; Zhang, Chao; Wang, Weidong; Wang, Fei
198. Blockchain-based trust management for agricultural green supply: A game theoretic approach.JOURNAL OF CLEANER PRODUCTION. 2021. 310. Bai, Yuhan; Fan, Kai; Zhang, Kuan; Cheng, Xiaochun; Li, Hui; Yang, Yintang
199. Extremely High Piezoelectric Properties in Pb-Based Ceramics through Integrating Phase Boundary and Defect Engineering.ACS APPLIED MATERIALS & INTERFACES. 2021. 13. 32. Yan, Yangxi; Li, Zhimin; Li Jin; Du, Hongliang; Zhang, Maolin; Zhang, Dongyan; Hao, Yue
200. High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene.ACS APPLIED MATERIALS & INTERFACES. 2021. 13. 27. Jia, Yanqing; Ning, Jing; Zhang, Jincheng; Wang, Boyu; Yan, Chaochao; Zeng, Yu; Wu, Haidi; Zhang, Yachao; Shen, Xue; Zhang, Chi; Guo, Haibin; Wang, Dong; Hao, Yue
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202. Regulation of the photogenerated carrier transfer process during photoelectrochemical water splitting: A review.GREEN ENERGY & ENVIRONMENT. 2021. 6. 4. Zhang, Yaping; Bu, Yuyu; Wang, Lin; Ao, Jin-Ping
203. MoTe2 PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector.ACS PHOTONICS. 2021. 8. 8. Li, Chen; Tian, Ruijuan; Yi, Ruixuan; Hu, Siqi; Chen, Yuxin; Yuan, Qingchen; Zhang, Xutao; Liu, Yan; Hao, Yue; Gan, Xuetao; Zhao, Jianlin
204. An Ultrafast Quasi-Non-Volatile Semi-Floating Gate Memory with Low-Power Optoelectronic Memory Application.ADVANCED ELECTRONIC MATERIALS. 2021. Zhou, Yu; Ning, Jing; Shen, Xue; Guo, Haibin; Zhang, Chi; Dong, Jianguo; Lu, Wei; Feng, Xin; Hao, Yue
205. Ferroelectric-Like Behavior in TaN/High-k/Si System Based on Amorphous Oxide.ADVANCED ELECTRONIC MATERIALS. 2021. Feng, Ze; Peng, Yue; Shen, Yang; Li, Zhiyun; Wang, Hu; Chen, Xiao; Wang, Yitong; Jing, Meiyi; Lu, Feng; Wang, Weihua; Cheng, Yahui; Cui, Yi; Dingsun, An; Han, Genquan; Liu, Hui; Dong, Hong
206. A Self-Powered Rectifier-Less Synchronized Switch Harvesting on Inductor Interface Circuit for Piezoelectric Energy Harvesting.IEEE TRANSACTIONS ON POWER ELECTRONICS. 2021. 36. 8. Wang, Xiudeng; Xia, Yinshui; Shi, Ge; Xia, Huakang; Chen, Zhidong; Ye, Yidie; Zhu, Zhangming
207. Interface Engineering of Metal-Oxide Field-Effect Transistors for Low-Drift pH Sensing.ADVANCED MATERIALS INTERFACES. 2021. Ren, Huihui; Liang, Kun; Li, Dingwei; Zhao, Momo; Li, Fanfan; Wang, Hong; Miao, Xiaohe; Zhou, Taofei; Wen, Liaoyong; Lu, Qiyang; Zhu, Bowen
208. Structure evolution and enhanced electrical performance for BiScO3-Bi (Ni1/2Zr1/2) O-3-PbTiO3 solid solutions near the morphotropic phase boundary.JOURNAL OF ALLOYS AND COMPOUNDS. 2021. 873. Zhao, Tian-Long; Fei, Chunlong; Pu, Kaiwen; Dai, Xianying; Song, Jianjun; Wang, Chun-Ming; Dong, Shuxiang
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210. Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP2S6/MoS2 Van Der Waals Heterojunction.NANOMATERIALS. 2021. 11. 8. Yang, Kun; Wang, Shulong; Han, Tao; Liu, Hongxia
211. Spiking dynamics and synchronization properties of optical neurons based on VCSEL-SAs.NONLINEAR DYNAMICS. 2021. 105. 3. Han, Yanan; Xiang, Shuiying; Song, Ziwei; Wen, Aijun; Hao, Yue
212. Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility.NANOSCALE RESEARCH LETTERS. 2021. 16. 1. Chou, Lulu; Liu, Yan; Xu, Yang; Peng, Yue; Liu, Huan; Yu, Xiao; Han, Genquan; Hao, Yue
213. Theoretical investigation of group-IV binary compounds in the P4/ncc phase.RESULTS IN PHYSICS.2021.26.Si, Zejian; Chai, Changchun; Zhang, Wei; Song, Yanxing; Yang, Yintang
214. Experimental Demonstration of Monolithic Bidirectional Switch With Anti-Paralleled Reverse Blocking p-GaN HEMTs.IEEE ELECTRON DEVICE LETTERS.2021.42.9.Wang, Haiyong; Mao, Wei; Luo, Jingtao; Yang, Cui; Chen, Jiabo; Zhao, Shenglei; Du,Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
215. Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes.IEEE ELECTRON DEVICE LETTERS.2021.42.9.Su, Huake; Xu, Shengrui; Tao, Hongchang; Fan, Xiaomeng; Du, Jinjuan; Peng, Ruoshi; Zhao, Ying; Ai, Lixia; Wu, Haoyang; Zhang, Jincheng; Li, Peixian; Hao, Yue
216. Controlling the Defect Density of Perovskite Films by MXene/SnO2 Hybrid Electron Transport Layers for Efficient and Stable Photovoltaics.JOURNAL OF PHYSICAL CHEMISTRY C.2021.125.28.Zheng, Huanhuan; Wang, Yijin; Niu, Bingqiang; Ge, Rui; Lei, Yimin; Yan, Lihe; Si, Jinhai; Zhong, Peng; Ma, Xiaohua
217. Semimetallic 2D Alkynyl Carbon Materials with Distorted Type I Dirac Cones.JOURNAL OF PHYSICAL CHEMISTRY C.2021.125.32.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Liu, Yuqian; Yang, Yintang; Sun, Minglei; Schwingenschlogl, Udo
218. Dynamical manipulation of a dual-polarization plasmon-induced transparency employing an anisotropic graphene-black phosphorus heterostructure.OPTICS EXPRESS.2021.29.19.Luo, Peng; Wei, Wei; Lan, Guilian; Wei, Xingzhan; Meng, Liya; Liu, Yan; Yi, Juemin; Han, Genquan
219. Investigation of charge trapping mechanism in MoS2 field effect transistor by incorporating Al into host La2O3as gate dielectric.NANOTECHNOLOGY.2021.32.30.Yang, Kun; Chen, Yanning; Wang, Shulong; Han, Tao; Liu, Hongxia
220. The real-time investigation of the nickel-iron hydroxide catalyzed oxygen evolution reaction with interdigitated array electrodes.NANOTECHNOLOGY.2021.32.37.Liu, Fei; Zhang, Jie; Wu, Weiwei; Zhang, Peng; Ma, Xiaohua; Tao, Keyu; Wang, Tongtong; Wang, Qi
221. Focus of ultrasonic underwater sound with 3D printed phononic crystal.APPLIED PHYSICS LETTERS.2021.119.7.Li, Zhaoxi; Yang, Shenghui; Wang, Danfeng; Shan, Han; Chen, Dongdong; Fei, Chunlong; Xiao, Meng; Yang, Yintang
222. Microstructures and electronic characters of beta-Ga2O3on different substrates: exploring the role of surface chemistry and structures.PHYSICAL CHEMISTRY CHEMICAL PHYSICS.2021.Zhu, Naxin; Xue, Xiangyi; Su, Jie
223. Thermal behaviors of the sharp zero-phonon luminescence lines of NV center in diamond.JOURNAL OF LUMINESCENCE.2021.236.Bao, Yitian; Xu, Shijie; Ren, Zeyang; Su, Zhicheng; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue
224. Slow Wave Substrate-Integrated Waveguide With Miniaturized Dimensions and Broadened Bandwidth.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES.2021.69.8.Zhang, Yin; Deng, Jing-Ya; Sun, Dongquan; Yin, Jia-Yuan; Guo, Li-Xin; Ma, Xiao-Hua; Hao, Yue
225. An orthorhombic superhard carbon allotrope: Pmma C24.JOURNAL OF SOLID STATE CHEMISTRY.2021.300.Fan, Qingyang; Liu, Heng; Yang, Runling; Yu, Xinhai; Zhang, Wei; Yun, Sining
226. Construction and electrical performance improvement of MoS2 FET with graphene/metal contact.OPTICAL MATERIALS EXPRESS.2021.11.9.Han, Tao; Liu, Hongxia; Chen, Shupeng; Wang, Shulong; Yang, Kun
227. Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer.MATERIALS LETTERS.2021.294.Zhao, Ying; Xu, Shengrui; Peng, Ruoshi; Du, Jinjuan; Fan, Xiaomeng; Tao, Hongchang; Zhang, Jincheng; Zhang, Jinfeng; Feng, Lansheng; Hao, Yue
228. A Bio-IA With Fast Recovery and Constant Bandwidth for Wearable Bio-Sensors.IEEE SENSORS JOURNAL.2021.21.17.Liu, Lianxi; Tian, Yuyuan; Huang, Wenbin
229. A New Type of Optical Fiber Glucose Biosensor With Enzyme Immobilized by Electrospinning.IEEE SENSORS JOURNAL.2021.21.14.Li, Jinze; Liu, Xin; Sun, Hao; Wang, Liming; Zhang, Jianqi; Huang, Xi; Deng, Li; Xi, Jiawei; Ma, Tianhong
230. Hf0.5Zr0.5O2-Based Ferroelectric Field-Effect Transistors With HfO2Seed Layers for Radiation-Hard Nonvolatile Memory Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68. 9.Liu, Chen; Xiao, Wenwu; Peng, Yue; Zeng, Binjian; Zheng, Shuaizhi; Yin, Lu; Peng, Qiangxiang; Zhong, Xiangli; Liao, Min; Zhou, Yichun
231. A subwavelength high modulation depth optical modulator based on bilayer graphene.OPTICAL MATERIALS.2021.117.Wang, Yindi; Liu, Hongxia; Wang, Shulong; Cai, Ming
232. AlN/GaN Superlattice Channel HEMTs on Silicon Substrate.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.7.Liu, Shuang; Zhang, Weihang; Zhang, Jincheng; Song, Xiufeng; Wu, Yinhe; Chen, Dazheng; Xu, Shengrui; Zhao, Shenglei; Hao, Yue
233. AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g(m) and Gain Linearity.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.7.Lu, Hao; Hou, Bin; Yang, Ling; Niu, Xuerui; Si, Zeyan; Zhang, Meng; Wu, Mei; Mi, Minhan; Zhu, Qing; Cheng, Kai; Ma, Xiaohua; Hao, Yue
234. Au-Free Al0.4Ga0.6N/Al0.1Ga0.9N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.9.Wu, Yinhe; Zhang, Weihang; Zhang, Jincheng; Zhao, Shenglei; Luo, Jun; Tan, Xiaohong; Mao, Wei; Zhang, Chunfu; Zhang, Yachao; Cheng, Kai; Liu, Zhihong; Hao, Yue
235. Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.9.Niu, Xuerui; Ma, Xiaohua; Hou, Bin; Yang, Ling; Lin, Yu-Shan; Zhu, Qing; Ciou, Fong-Min; Chen, Kuan-Hsu; Chen, Yilin; Du, Jiale; Wu, Mei; Zhang, Meng; Wang, Chong; Chang, Ting-Chang; Hao, Yue
236. Novel SOI LDMOS Without RESURF Effect by Flexible Substrate for Flexible Electronic Systems.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.8.Duan, Baoxing; Tang, Chunping; Song, Kun; Wang, Yandong; Yang, Yintang
237. High performance GaN-based monolithic bidirectional switch using diode bridges.APPLIED PHYSICS EXPRESS.2021.14.9.Wang, Haiyong; Mao, Wei; Yang, Cui; Zhao, Shenglei; Du, Ming; Wang, Xiaofei; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
238. Recent Development and Perspectives of Optimization Design Methods for Piezoelectric Ultrasonic Transducers.MICROMACHINES.2021.12.7.Chen, Dongdong; Wang, Linwei; Luo, Xingjun; Fei, Chunlong; Li, Di; Shan, Guangbao; Yang, Yintang
239. Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode.MICROMACHINES.2021.12.8.Dai, Yang; Ye, Qingsong; Dang, Jiangtao; Lu, Zhaoyang; Zhang, Weiwei; Lei, Xiaoyi; Zhang, Yunyao; Zhang, Han; Liao, Chenguang; Li, Yang; Zhao, Wu
240. GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V.SUPERLATTICES AND MICROSTRUCTURES.2021.156.Li, Ang; Wang, Chong; He, Yunlong; Zheng, Xuefeng; Ma, Xiaohua; Zhao, Yaopeng; Liu, Kai; Hao, Yue
241. Optical and surface properties of 3C-SiC thin epitaxial films grown at different temperatures on 4H-SiC substrates.SUPERLATTICES AND MICROSTRUCTURES.2021.156.Wang, Bingjun; Yin, Junhua; Chen, Daihua; Long, Xianjian; Li, Lei; Lin, Hao-Hsiung; Hu, Weiguo; Talwar, Devki N.; Jia, Ren-Xu; Zhang, Yu-Ming; Ferguson, Ian T.; Sun, Wenhong; Feng, Zhe Chuan; Wan, Lingyu
242. Recessed-anode AlGaN/GaN diode with a high Baliga's FOM by combining a p-GaN cap layer and an anode-connected p-GaN buried layer.SUPERLATTICES AND MICROSTRUCTURES.2021.156.Wang, Tingting; Li, Liuan; Wang, Xiao; He, Yue; Ao, Jin-Ping
243. Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain.SUPERLATTICES AND MICROSTRUCTURES.2021.156.Wang, Haiyong; Mao, Wei; Zhao, Shenglei; Chen, Jiabo; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
244. A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.IET POWER ELECTRONICS.2021.14.11.Liu, Sicheng; Tang, Xiaoyan; Song, Qingwen; Wang, Yuehu; Bai, Ruijie; Zhang, Yimen; Zhang, Yuming
245. Study on Electric Field Modulation and Avalanche Enhancement of SiC/GaN IMPATT Diode.ELECTRONICS.2021.10.17.Dai, Yang; Dang, Jiangtao; Ye, Qingsong; Lu, Zhaoyang; Pu, Shi; Lei, Xiaoyi; Zhao, Shenglei; Zhang, Yunyao; Liao, Chenguang; Zhang, Han; Zhao, Wu
246. Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2021.36.9.Wang, Ying-Zhe; Zheng, Xue-Feng; Lv, Ling; Cao, Yan-Rong; Wang, Xiao-Hu; Mao, Wei; Du, Ming; Hu, Pei-Pei; Li, Pei-Xian; Liu, Jie; Ma, Xiao-Hua; Guo, Li-Xin; Hao, Yue
247. An On-Chip Auto-Tuning Method for Continuous-time Filters with Improved Speed and Accuracy.IETEJOURNAL OF RESEARCH.2021.Wu, Hao; Zhuang, Yiqi; Rauf, Hafiz Tayyab; Al-Turjman, Fadi
248. Total Dose Radiation Response of Capacitance Characteristic for Nano-scale NMOS.IETE JOURNAL OF RESEARCH.2021.67.4.Liao, Chenguang; Yang, Yintang; Zhu, Zhangming; Hao, Minru
249. Direct and quasi-direct band gap of novel Si-Ge alloys in P-3m1 phase.JOURNAL OF PHYSICS-CONDENSED MATTER.2021.33.38.Fan, Qingyang; Hao, Bingqian; Yang, Fang; Song, Yanxing; Yu, Xinhai; Yun, Sining
250. Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO2: ab initio simulation study.JOURNAL OF PHYSICS-CONDENSED MATTER.2021.33.29.Wu, Jibao
251. A waveguide-integrated graphene-based subwavelength electro-optic switch at 1550 nm.OPTICS COMMUNICATIONS.2021.495.Wang, Yindi; Liu, Hongxia; Wang, Shulong; Cai, Ming
252. All-optical Sudoku solver with photonic spiking neural network.OPTICS COMMUNICATIONS.2021.495.Gao, Shuang; Xiang, Shuiying; Song, Ziwei; Han, Yanan; Hao, Yue
253. Study on the asymmetry of nanopore in Al droplet etching.OPTICAL AND QUANTUM ELECTRONICS.2021.53.8.Shen, Jiaxin; Lv, Hongliang; Ni, Haiqiao; Liu, Hanqing; Su, Xiangbin; Zhang, Jing; Shang, Xiangjun; Zhuo, Zhiyao; Li, Shulun; Chen, Yao; Sun, Baoquan; Zhang, Yu; Niu, Zhichuan
254. Influence of Oxygen on beta-Ga2O3 Films Deposited on Sapphire Substrates by MOCVD.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.2021.10 7.Zhang, Tao; Hu, Zhiguo; Li, Yifan; Cheng, Qian; Ma, Jinbang; Tian, Xusheng; Zhao, Chunyong; Zuo, Yan; Feng, Qian; Zhang, Yachao; Ning, Jing; Zhou, Hong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
255. Design of high-isolation and low-loss single pole double throw switch based on the triple-coupled transformer for ultra-wideband phased array systems.INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS.2021.Wang, Zeyuan; Li, Zhenrong; Wang, Yuxin; Li, Zhen; Zhuang, Yiqi
256. Band contour-extraction method based on conformal geometrical algebra for space tumbling targets.CHEMICAL ENGINEERING JOURNAL. 2021.60.26.Li, Jie; Zhuang, Yiqi; Peng, Qi; Zhao, Liang
257. Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY.2021.21.3.Yuan, Hao; Liu, Yancong; Zhang, Tingsong; He, Yanjing; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming; He, Xiaoning
258. Mechanism Analysis and Thermal Damage Prediction of High-Power Microwave Radiated CMOS Circuits.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY.2021.21.3.Liang, Qi-Shuai; Chai, Chang-Chun; Wu, Han; Liu, Yu-Qian; Li, Fu-Xing; Yang, Yin-Tang
259. A single-inductor thermoelectric and photovoltaic hybrid harvesting interface with time-multiplexed technology and accurate zero current detector.MICROELECTRONICS JOURNAL.2021.113.Liu, Lianxi; Zhang, Peichao; Liao, Xufeng; Zhu, Zhangming
260. A statistical offset calibration technique for 1.5-bit/cycle SAR ADCs.MICROELECTRONICS JOURNAL.2021.114.Li, Dengquan; Liu, Maliang; Liu, Shubin; Liang, Yuhua; Ding, Ruixue
261. Improving avalanche robustness of SiC MOSFETs by optimizing three-region P-well doping profile.MICROELECTRONICS RELIABILITY.2021.124.Bai, Zhiqiang; Tang, Xiaoyan; He, Yanjing; Yuan, Hao; Song, Qingwen; Zhang, Yuming
262. Influence of ionisation track structure on 20 nm FDSOI transistor.MICROELECTRONICS RELIABILITY.2021.123.Zhang, Hao; Liu, Hongxia; Pan, Ziwen; Chen, Shupeng; Chen, Ruibo
263. An investigation of the characteristics of dam-break flood in a confluence channel based on the lattice Boltzmann method.AIP ADVANCES.2021.11.4.Zhang, Juyi; Wang, Wei; Tian, Zhong; Li, Yingjin
264. A comparative study on radiation reliability of composite channel InP high electron mobility transistors*.CHINESE PHYSICS B.2021.30.7.Zhang, Jia-Jia; Ding, Peng; Jin, Ya-Nan; Meng, Sheng-Hao; Zhao, Xiang-Qian; Hu, Yan-Fei; Zhong, Ying-Hui; Jin, Zhi
265. C band microwave damage characteristics of pseudomorphic high electron mobility transistor*.CHINESE PHYSICS B.2021.30 9.Li, Qi-Wei; Sun, Jing; Li, Fu-Xing; Chai, Chang-Chun; Ding, Jun; Fang, Jin-Yong
266. Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress*.CHINESE PHYSICS B.2021.30.7.Yuan, Yi-Dong; Zhao, Dong-Yan; Cao, Yan-Rong; Wang, Yu-Bo; Shao, Jin; Chen, Yan-Ning; He, Wen-Long; Du, Jian; Wang, Min; Peng, Ye-Ling; Zhang, Hong-Tao; Fu, Zhen; Ren, Chen; Liu, Fang; Zhang, Long-Tao; Zhao, Yang; Lv, Ling; Zhao, Yi-Qiang; Zheng, Xue-Feng; Zhou, Zhi-Mei; Wan, Yong; Ma, Xiao-Hua
267. High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an f (T)/f (max) over 100 GHz/200 GHz*.CHINESE PHYSICS B.2021.30.8.Wu, Sheng; Mi, Minhan; Ma, Xiaohua; Yang, Ling; Hou, Bin; Hao, Yue
268. Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure*.CHINESE PHYSICS B.2021.30.8.Li, Ruo-Han; Fei, Wu-Xiong; Tang, Rui; Wu, Zhao-Xi; Duan, Chao; Zhang, Tao; Zhu, Dan; Zhang, Wei-Hang; Zhao, Sheng-Lei; Zhang, Jin-Cheng; Hao, Yue
269. An In0.53Ga0.47As/In0.52Al0.48As/In0.53Ga0.47As double hetero-junction junctionless TFET.JAPANESE JOURNAL OF APPLIED PHYSICS.2021.60.7.Liu, Hu; Yang, Lin-An; Zhang, Huawei; Zhang, Bingtao; Zhang, Wenting
270. Performance enhancement of cross dipole circularly polarized antenna using parasitic elements.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS.2021.Wang, Lei; Zhu, Zhangming
271. Exploration of switching characteristics of 4H-SiC floating junction Schottky barrier diodes with stronger blocking voltage capability.JOURNAL OF POWER ELECTRONICS.2021.Nan, Yagong; Han, Genquan
272. A 1.8-V 240-MHz 2.19-mW Four-Stage CMOS OTA with a Segmenting Frequency Compensation Technique.CHINESE JOURNAL OF ELECTRONICS.2021.30 5.Yuhua, L. I. A. N. G.; Zirui, Z. H. E. N. G.; Shubin, L. I. U.; Dengquan, L., I; Ruixue, D. I. N. G.; Zhangming, Z. H. U.
273. Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes.JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION.2021.36.4.Sun Xinli; Guo Hui; Zhang Yuming; Guo Bingjian; Li Xingpeng; Cao Zhen
274. Analysis of novel silicon based lateral power devices with floating substrate on insulator.ACTA PHYSICA SINICA.2021.70.14.Tang Chun-Ping; Duan Bao-Xing; Song Kun; Wang Yan-Dong; Yang Yin-Tang
275. TSV-based hairpin bandpass filter for 6G mobile communication applications.IEICE ELECTRONICS EXPRESS.2021.18.15.Wang, Fengjuan; Ke, Lei; Yin, Xiangkun; Pavlidis, Vasilis F.; Yu, Ningmei; Yang, Yuan
276. A fast transient RBAOT controlled DC-DC buck converter with dual-loop DC offset cancellation technique and constant switching frequency.MICROELECTRONICS JOURNAL.2021.116.Liu, Lianxi; Sun, Mengna; Huang, Wenbin; Xu, Chengzhi
277. Machine Learning Regression-Based Single-Event Transient Modeling Method for Circuit-Level Simulation.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.11.Xu, Changqing; Liu, Yi; Liao, Xinfang; Cheng, Jialiang; Yang, Yintang
278. Compact and Physics-Based Modeling of 3-D Inductor Based on Through Silicon Via.IEEE ELECTRON DEVICE LETTERS.2021.42.10.Xiong, Wei; Dong, Gang; Zhu, Zhangming; Yang, Yingtang
279. A 3.66 mu W 12-bit 1 MS/s SAR ADC with mismatch and offset foreground calibration.MICROELECTRONICS JOURNAL.2021.116.Zhang, Yizhen; Cai, Jueping; Li, Xinyu; Zhang, Yuxin; Su, Bowen
280. A possible single event burnout hardening technique for SiC Schottky barrier diodes.SUPERLATTICES AND MICROSTRUCTURES.2021.160.Liao, Xinfang; Liu, Yi; Li, Jing; Cheng, Jialiang; Yang, Yintang
281. An Anisotropic Equivalent Thermal Model for Shield Differential Through-Silicon Vias.MICROMACHINES.2021.12.10.Shan, Guangbao; Li, Guoliang; Chen, Dongdong; Yang, Zifeng; Li, Di; Yang, Yintang
282. A 5 MHz-BW 71.7-dB SNDR two-step hybrid-domain ADC in 65-nm CMOS.MICROELECTRONICS JOURNAL.2021.117.Yu, Zhe; Liang, Yuhua; Liu, Shubin
283. Research on the crystal phase and orientation of Ga2O3Hetero-epitaxial film.SUPERLATTICES AND MICROSTRUCTURES.2021.159.Zhang, Tao; Li, Yifan; Cheng, Qian; Hu, Zhiguo; Ma, Jinbang; Yao, Yixin; Cui, Chenxia; Zuo, Yan; Feng, Qian; Zhang, Yachao; Zhou, Hong; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
284. Inverse photoconductivity effect in triple cation organic-inorganic hybrid perovskite memristors with various iodine concentrations, electrodes, and modified layers.JOURNAL OF MATERIALS CHEMISTRY C.2021.10.4.Wang, Yucheng; Xiong, Yuxuan; Sha, Jian; Guo, Jiyang; Wang, Hongsu; Qiang, Ziqing; Shang, Yueyang; Jia, Renxu; Sun, Kai; Huang, Fobao; Gan, Xuetao; Wang, Shaoxi
285. Effects of the pretreatment of Si substrate before the pre-deposition of Al on GaN-on-Si.SUPERLATTICES AND MICROSTRUCTURES.2021.159.Ma, Jinbang; Zhang, Yachao; Zhang, Tao; Li, Yifan; Yao, Yixin; Feng, Qian; Bi, Zhen; Zhang, Jincheng; Hao, Yue
286. Ultracompact Bandpass Filter Based on Slow Wave Substrate Integrated Groove Gap Waveguide.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES.2021.Deng, Jing-Ya; Yuan, Dan-Dan; Yin, Jia-Yuan; Sun, Dongquan; Guo, Li-Xin; Ma, Xiao-Hua; Hao, Yue
287. Microwave power performance analysis of hydrogen terminated diamond MOSFET.DIAMOND AND RELATED MATERIALS.2021.118.Cui, Ao; Zhang, Jinfeng; Ren, Zeyang; Zhou, Hong; Wang, Dong; Wu, Yong; Lei, Yingyi; Zhang, Jincheng; Hao, Yue
288. A 240-nA Quiescent Current, 95.8% Efficiency AOT-Controlled Buck Converter With A(2)-Comparator and Sleep-Time Detector for IoT Application.IEEE TRANSACTIONS ON POWER ELECTRONICS.2021.36.11.Huang, Wenbin; Liu, Lianxi; Liao, Xufeng; Xu, Chengzhi; Li, Yonyuan
289. Lateral AlGaN/GaN Schottky Barrier Diode With Arrayed p-GaN Islands Termination.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.12.Wang, Haiyong; Mao, Wei; Yang, Cui; Chen, Jiabo; Zhao, Shenglei; Du, Ming; Wang, Xiaofei; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
290. A 10-Bit 2.5-GS/s Two-Step ADC With Selective Time-Domain Quantization in 28-nm CMOS.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS.2021.Liu, Maliang; Zhang, Chenxi; Liu, Shubin; Li, Dengquan
291. A T-Model With Parameter Extraction Method for Modeling 3-D Spiral Inductor.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2021.32.1.Liu, Yang; Liu, Xiaoxian; Lu, Qijun; Zhang, Tao; Yin, Xiangkun
292. Low walk error multi-stage cascade comparator for TOF LiDAR application.MICROELECTRONICS JOURNAL.2021.116.Xiao, Jinhai; Liu, Maliang; Zhu, Zhangming
293. Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 degrees C and High Responsivity.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.11.Du, Fengyu; Song, Qingwen; Tang, Xiaoyan; Zhang, Zeyulin; Yuan, Hao; Han, Chao; Zhang, Chunfu; Zhang, Yimen; Zhang, Yuming
294. A 10 mV-500 mV Input Range, 91.4% Peak Efficiency Adaptive Multi-Mode Boost Converter for Thermoelectric Energy Harvesting.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS.2021.69.2.Liu, Lianxi; Xing, Yihe; Huang, Wenbin; Liao, Xufeng; Li, Yongyuan
295. High-Purity, Thick CsPbCl3Films toward Selective Ultraviolet-Harvesting Visibly Transparent Photovoltaics.ACS APPLIED ENERGY MATERIALS.2021.4.11.Chen, Dandan; Ba, Yanshuang; Deng, Minyu; Zhu, Weidong; Chai, Wenming; Xi, He; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
296. Novel Vertical Power MOSFET With Step Hk Insulator Close to Super Junction Limit Relationship Between Breakdown Voltage and Specific ON-Resistance by Improving Electric Field Modulation.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.10.Duan, Baoxing; Wang, Yulong; Wang, Yandong; Dong, Ziming; Yang, Yintang
297. Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure.CRYSTALS.2021.11.10.Fan, Xiaomeng; Xu, Shengrui; Tao, Hongchang; Peng, Ruoshi; Du, Jinjuan; Zhao, Ying; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue
298. A 22.7-to 44.2-GHz Darlington dual-injection injection-locked frequency tripler with >35dBc harmonic rejection for multiband 5G communication systems.INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS.2021.Li, Zhen; Li, Zhenrong; Wang, Xudong; Quan, Xing; Wang, Zeyuan; Zhuang, Yiqi
299. High-Resistance State Reduction During Initial Cycles of AlOxNy-Based RRAM.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.11.Duan, Yiwei; Gao, Haixia; Shen, Xuping; Sun, Yuxin; Guo, Jingshu; Yu, Zhenxi; Wu, Shuliang; Yang, Mei; Ma, Xiaohua; Yang, Yintang
300. Heteroepitaxial growth of beta-Ga2O3thin films on c-plane sapphire substrates with beta-(AlxGa1-x)(2)O-3 intermediate buffer layer by mist-CVD method.MATERIALS TODAY COMMUNICATIONS.2021.29.Cheng, Yaolin; Zhang, Chunfu; Xu, Yu; Li, Zhe; Chen, Dazheng; Zhu, Weidong; Feng, Qian; Xu, Shengrui; Zhang, Jincheng; Hao, Yue
301. A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.69.1.Chen, Jiabo; Liu, Zhihong; Wang, Haiyong; He, Yue; Zhu, Xiaoxiao; Ning, Jing; Zhang, Jincheng; Hao, Yue
302. Twisted angle modulated structural property, electronic structure and carrier transport of mixed-dimensional van der Waals heterostructure.APPLIED SURFACE SCIENCE.2021.563.Zhu, Jiaduo; Shang, Wei; Ning, Jing; Wang, Dong; Zhang, Jincheng; Hao, Yue
303. In situ polymer-covered annealing strategy for high-efficiency carbon-electrode CsPbIBr2 solar cells.NEW JOURNAL OF CHEMISTRY.2021.45.48.Xie, Xiaoping; Liu, Gang; Dong, Peng; Liu, Dawei; Ni, Yufeng; Ma, Junxiao; Zhu, Weidong; Chen, Dazheng; Zhang, Chunfu
304. A 0.43 V/90 nA/mm Lateral AlGaN/GaN Schottky Barrier Diode With Plasma-Free Groove Anode Technique.IEEE ELECTRON DEVICE LETTERS.2021.42.12.Zhang, Tao; Li, Ruohan; Lu, Juan; Zhang, Yanni; Lv, Yueguang; Duan, Xiaoling; Xu, Shengrui; Zhang, Jincheng; Hao, Yue
305. A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.11.Wu, Sheng; Mi, Minhan; Zhang, Meng; Yang, Ling; Hou, Bin; Ma, Xiaohua; Hao, Yue
306. Multiresolution Discriminative Mixup Network for Fine-Grained Visual Categorization.IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS.2021.Xu, Kunran; Lai, Rui; Gu, Lin; Li, Yishi
307. Effect of post anode annealing on W/Au and Ni/Au multi-channel AlGaN/GaN Schottky diode.SUPERLATTICES AND MICROSTRUCTURES.2021.160.Liu, Kai; Wang, Chong; Zheng, Xuefeng; Ma, Xiaohua; He, Yunlong; Li, Ang; Zhao, Yaopeng; Mao, Wei; Hao, Yue
308. The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.12.Jia, Fuchun; Ma, Xiaohua; Yang, Ling; Hou, Bin; Zhang, Meng; Zhu, Qing; Wu, Mei; Mi, Minhan; Zhu, Jiejie; Liu, Siyu; Hao, Yue
309. Comprehensive Study and Optimization of Implementing p-NiO in beta-Ga2O3Based Diodes via TCAD Simulation.CRYSTALS.2021.11.10.Zhou, Hong; Zeng, Shifan; Zhang, Jincheng; Liu, Zhihong; Feng, Qian; Xu, Shengrui; Zhang, Jinfeng; Hao, Yue
310. 1039 kA/cm(2) peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate.APPLIED PHYSICS LETTERS.2021.119.15.Zhang, HePeng; Xue, JunShuai; Sun, ZhiPeng; Li, LanXing; Yao, JiaJia; Liu, Fang; Yang, XueYan; Wu, GuanLin; Li, ZuMao; Fu, YongRui; Liu, ZhiHong; Zhang, JinCheng; Hao, Yue
311. A Novel Simulation Method for Analyzing Diode Electrical Characteristics Based on Neural Networks.ELECTRONICS.2021.10.19.Liu, Tao; Xu, Le; He, Yao; Wu, Han; Yang, Yong; Wu, Nankai; Yang, Xiaoning; Shi, Xiaowei; Wei, Feng
312. A Low Phase-Noise Dual-Frequency Oscillator Based on Filter Switching Technique.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2021.32.1.Lai, Jinming; Wang, Hailong; Wang, Chaojie; Ma, Xiaohua; Li, Zhiyou
313. Optimization and Performance Prediction of Tunnel Field-Effect Transistors Based on Deep Learning.ADVANCED MATERIALS TECHNOLOGIES.2021.Wang, Gang; Wang, Shulong; Ma, Lan; Wang, Guosheng; Wu, Jieyu; Duan, Xiaoling; Chen, Shupeng; Liu, Hongxia
314. Normally-off polycrystalline C-H diamond MISFETs with MgF2 gate insulator and passivation.DIAMOND AND RELATED MATERIALS.2021.119.He, Qi; Zhang, Jinfeng; Ren, Zeyang; Zhang, Jincheng; Su, Kai; Lei, Yingyi; Lv, Dandan; Mi, Tianhe; Hao, Yue
315. Enhancing Breakdown Voltage of a Ga2O3Schottky Barrier Diode with Small-Angle Beveled and High-k Oxide Field Plate.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.2021.10.12.Liu, Dinghe; Huang, Yuwen; Zhang, Zeyulin; Chen, Dazheng; Feng, Qian; You, Hailong; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
316. The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2021.219.2.Deng, Song; Liu, Kai; Wang, Chong; Zheng, Xuefeng; Ma, Xiaohua; Wang, Runhao; Zhao, Yaopeng; Li, Ang; He, Yunlong; Mao, Wei; Hao, Yue
317. A 6-18 GHz high dB-linear attenuator based on variable gain amplifier for ultra-wideband phased array systems.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS.2021.64.2.Wang, Zeyuan; Li, Zhenrong; Wang, Xudong; Cheng, Xiayu; Li, Zhen; Zhuang, Yiqi
318. High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD.MATERIALS LETTERS.2021.305.Xu, Wenqiang; Xu, Shengrui; Tao, Hongchang; Gao, Yuan; Fan, Xiaomeng; Du, Jinjuan; Ai, Lixia; Peng, Liping; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue
319. Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction.CRYSTALS.2021.11.12.Lin, Jinfu; Liu, Hongxia; Wang, Shulong; Zhang, Siyu
320. Correlated imaging based on biperiodic light field of optical phased array.ACTA PHYSICA SINICA.2021.70.23.Sun Yan-Ling; Cao Rui; Wang Zi-Hao; Liao Jia-Li; Liu Qi-Xin; Feng Jun-Bo; Wu Bei-Bei
321. Study on circuit modeling of stretchable serpentine interconnects.INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS.2021.Wu, Zhenyu; Peng, Chaoqun; Liao, Jiao; Chen, Quanxiu
322. A high-sensitivity, low-noise dual-band RF energy harvesting and managing system for wireless bio-potential acquisition.MICROELECTRONICS JOURNAL.2021.116.Tian, Yuyuan; Liu, Lianxi; Ma, Jian
323. Pose Estimation of Non-Cooperative Space Targets Based on Cross-Source Point Cloud Fusion.REMOTE SENSING.2021.13.21.Li, Jie; Zhuang, Yiqi; Peng, Qi; Zhao, Liang
324. A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse.IEEE ELECTRON DEVICE LETTERS.2021.42.11.Lv, Jiaxin; Wang, Saisai; Li, Fanfan; Liang, Qi; Yang, Mei; Ma, Xiaohua; Wang, Hong; Hao, Yue
325. A transformer with high coupling coefficient and small area based on TSV.INTEGRATION-THE VLSI JOURNAL.2021.81.Wang, Fengjuan; Ren, Ruinan; Yin, Xiangkun; Yu, Ningmei; Yang, Yuan
326. Hysteresis Behavior and Photoresponse Enhancement in Au Nanoparticle-Decorated Ge Photodetectors.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.11.Wang, Liming; Zhang, Yichi; Wang, Bo; You, Jie; Wei, Ying; Meng, Lingyao; Liu, Tao; Jiang, Zuimin; Hu, Huiyong
327. Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.10.Lu, Hao; Ma, Xiaohua; Hou, Bin; Yang, Ling; Zhang, Meng; Wu, Mei; Si, Zeyan; Zhang, Xinchuang; Niu, Xuerui; Hao, Yue
328. Probability property of orbital angular momentum distortion in turbulence.OPTICS EXPRESS.2021.29.26.Wang, Wanjun; Ye, Tianchun; Wu, Zhensen
329. Solution processed In2O3/IGO heterojunction thin film transistors with high carrier concentration.CERAMICS INTERNATIONAL.2021.47.24.He, Fuchao; Wang, Yifei; Yuan, Haidong; Lin, Zhenhua; Su, Jie; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
330. Unveiling the Relationship between Passivation Groups and the Structural and Optoelectronic Performances of Perovskite Surfaces and Devices.JOURNAL OF PHYSICAL CHEMISTRY C.2021.Zhang, Siyu; Su, Jie; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
331. Enhancing the Luminous Efficiency of Ultraviolet Light Emitting Diodes By Adjusting the Al Composition of Pre-Well Superlattice.IEEE PHOTONICS JOURNAL.2021.13.5.Wang, Yanli; Li, Peixian; Jiang, Siyu; Zhou, Xiaowei; Wu, Jinxing; Yue, Wenkai; Hao, Yue
332. A UHF-band 100 W broadband hybrid GaN power amplifier based on the regional modulation of impedance distribution method.AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS.2021.141.Lu, Yang; Xu, Xin; Han, Hongbo; Zhao, Bochao; Zhang, Hengshuang; Zhao, Ziyue; Yi, Chupeng; Wang, Yuchen; Guo, Lixin; Ma, Xiaohua
333. A unified hybrid compact model of beta-Ga2O3 Schottky barrier diodes for mixer and rectifier applications.SCIENCE CHINA-INFORMATION SCIENCES.2021.64.11.Zhou, Kai; He, Qiming; Jian, Guangzhong; Xu, Guangwei; Wu, Feihong; Li, Yao; Hu, Zhuangzhuang; Feng, Qian; Zhao, Xiaolong; Long, Shibing
334. A miniature TSV-based branch line coupler using pi equivalent circuit model for transmission line.IEICE ELECTRONICS EXPRESS.2021.Wang, Fengjuan; Xiao, Sa; Yin, Xiangkun; Yu, Ningmei; Yang, Yuan
335. Impact reliability analysis of a rigid-flex PCB system under acceleration loads.MICROELECTRONICS RELIABILITY.2021.127.Zhang, Bowen; Shan, Guangbao; Su, Fei
336. 490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics.SOLID-STATE ELECTRONICS.2021.186.Liu, Kai; Wang, Chong; Zheng, Xuefeng; Ma, Xiaohua; Huang, Zeyang; He, Yunlong; Li, Ang; Zhao, Yaopeng; Mao, Wei; Hao, Yue
337. Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.10.Pu, Taofei; Li, Xiaobo; Wu, Junye; Yang, Jiaying; Lu, Youming; Liu, Xinke; Ao, Jin-Ping
338. Mixed-Dimensional MoS2/Ge Heterostructure Junction Field-Effect Transistors for Logic Operation and Photodetection.ADVANCED FUNCTIONAL MATERIALS.2021.Wang, Bo; Wang, Liming; Zhang, Yichi; Yang, Maolong; Lin, Dongdong; Zhang, Ningning; Jiang, Zuimin; Liu, Maliang; Zhu, Zhangming; Hu, Huiyong
339. A Miniatured Passive Low-Pass Filter With Ultrawide Stopband Based on 3-D Integration Technology.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2021.32.1.Yin, Xiangkun; Wang, Fengjuan; Lu, Qijun; Liu, Xiaoxian; Liu, Yang; Yang, Yintang
340. Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application.NANOMATERIALS.2021.11.11.Zhang, Jiaqi; Wu, Yichang; Yang, Guofang; Chen, Dazheng; Zhang, Jincheng; You, Hailong; Zhang, Chunfu; Hao, Yue
341. Performance Enhancement of Broadband Circularly Polarized Slot-Microstrip Antenna Using Parasitic Elements.IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS.2021.20.12.Wang, Lei; Zhu, Zhangming; En, Yunfei
342. Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.69.1.Niu, Xuerui; Hou, Bin; Yang, Ling; Zhang, Meng; Zhang, Xinchuang; Lu, Hao; Jia, Fuchun; Du, Jiale; Wu, Mei; Song, Fang; Wang, Chong; Ma, Xiaohua; Hao, Yue
343. A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings.APPLIED PHYSICS EXPRESS.2021.14.11.Chen, Jiabo; Song, Xiufeng; Liu, Zhihong; Duan, Xiaoling; Wang, Haiyong; Bian, Zhaoke; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
344. Modulation of Q Factor and Fano Lineshape in Ge2Sb2Te5-Based Grating Structure.IEEE PHOTONICS JOURNAL.2021.13.6.Liu, Qing; Yao, Danyang; Liu, Yan; Liu, Xinyi; Zhang, Yong; Han, Genquan; Hao, Yue
345. Determination of the leakage current transport mechanisms in quasi-vertical GaN-on-Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures.APPLIED PHYSICS EXPRESS.2021.14.10.Chen, Jiabo; Liu, Zhihong; Wang, Haiyong; Song, Xiufeng; Bian, Zhaoke; Duan, Xiaoling; Zhao, Shenglei; Ning, Jing; Zhang, Jincheng; Hao, Yue
346. Fast-response self-powered solar-blind photodetector based on Pt/beta-Ga2O3 Schottky barrier diodes.OPTIK.2021.245.Peng, Bo; Yuan, Lei; Zhang, Hongpeng; Cheng, Hongjuan; Zhang, Shengnan; Zhang, Yimen; Zhang, Yuming; Jia, Renxu
347. Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer.APPLIED SURFACE SCIENCE.2021.570.Zhou, Jiyu; Li, Xiaobo; Pu, Taofei; He, Yue; Wang, Xiao; Bu, Yuyu; Li, Liuan; Ao, Jin-Ping
348. 3D superhard metallic carbon network with 1D multi-threaded conduction.DIAMOND AND RELATED MATERIALS.2021.120.Zhang, Wei; Chai, Changchun; Song, Yanxing; Fan, Qingyang; Yang, Yintang
349. Design of compact LC lowpass filters based on coaxial through-silicon vias array.MICROELECTRONICS JOURNAL.2021.116.Yin, Xiangkun; Wang, Fengjuan; Pavlidis, Vasilis F.; Liu, Xiaoxian; Lu, Qijun; Zhang, Tao; Liu, Yang
350. Structure-Size Optimization and Fabrication of 3.7 GHz Film Bulk Acoustic Resonator Based on AlN Thin Film.FRONTIERS IN MATERIALS.2021.8.Jiang, Pingying; Mao, Shiping; An, Zaifang; Fei, Chunlong; Lou, Lifei; Li, Zhaoxi; Zhao, Tianlong; Jiang, Shiyi; Yang, Yintang
351. A pendulum-plucked rotor for efficient exploitation of ultralow-frequency mechanical energy.RENEWABLE ENERGY.2021.179.Fan, Kangqi; Wang, Chenyu; Chen, Chenggen; Zhang, Yan; Wang, Peihong; Wang, Fei
352. A Compact Model for Nanowire Tunneling-FETs.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.69.1.Lu, Bin; Wang, Dawei; Cui, Yan; Li, Zhu; Chai, Guoqiang; Dong, Linpeng; Zhou, Jiuren; Wang, Guilei; Miao, Yuanhao; Lv, Zhijun; Lu, Hongliang
353. Study of InxGa1-xN/GaN Homotype Heterojunction IMPATT Diodes.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.11.Dai, Yang; Lu, Zhaoyang; Ye, Qingsong; Dang, Jiangtao; Zhao, Shenglei; Lei, Xiaoyi; Yun, Jiangni; Zhao, Wu; Chen, Xiaojiang
354. Improving the System Performance in Terrestrial-Satellite Relay Networks by Configuring Aerial Relay.IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY.2021.70.12.Wu, Bibo; Fang, Fang; Fu, Shu
355. Study of the role of air exposure time to interface oxide on HCl treated InAs (100) before atomic layer deposition of Al(2)O3.VACUUM.2021.193.Jing, Meiyi; Lu, Tongkang; Sun, Yong; Zhao, Xiaoliang; Feng, Ze; Wang, Yitong; Liu, Hui; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Han, Genquan; Dong, Hong
356. Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure.IEEE TRANSACTIONS ON NUCLEAR SCIENCE.2021.68.11.Zhu, Tian; Zheng, Xue-Feng; Wang, Jia; Wang, Mao-Sen; Chen, Kai; Wang, Xiao-Hu; Du, Ming; Ma, Pei-Jun; Zhang, Hao; Lv, Ling; Cao, Yan-Rong; Ma, Xiao-Hua; Hao, Yue
357. An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with three-dimensional p-type buried layers.JOURNAL OF CENTRAL SOUTH UNIVERSITY.2021.28.12.Yang Shuai; Zhang Xiao-dong; Cao An; Luo Wen-yu; Zhang Guang-lei; Peng Bo; Zhao Jin-jin
358. Energy efficiency optimization of field-oriented control for PMSM in all electric system.SUSTAINABLE ENERGY TECHNOLOGIES AND ASSESSMENTS.2021.48.Lu, Yufang; Jiang, Zhijun; Chen, Chunhai; Zhuang, Yiqi
359. Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors.COATINGS.2021.11.12.Jia, Yifan; Sun, Shengjun; Liu, Xiangtai; Lu, Qin; Qin, Ke; Wang, Shaoqing; Guan, Yunhe; Chen, Haifeng; Tang, Xiaoyan; Zhang, Yuming
360. High-resolution dynamic imaging system based on a 2D optical phased array.OPTICS EXPRESS.2021.29.24.Wang, Zihao; Sun, Yanling; Liao, Jiali; Wang, Chen; Cao, Rui; JIn, Li; Cao, Changqing
361. A new square-slot circularly polarized antenna array with broadband characteristic.ELECTROMAGNETICS.2021.41.7.Han, Hong-Bo; Hao, Lichao; Wang, Lei; Dai, Yang
362. A compact dual-functional component for spatial diversity and multiplexing applications.INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING.2021.32.3.Sun, Li; Zhou, Shi-gang; Zhang, Guan-xi; Sun, Bao-hua
363. Intelligent optimization design of 2-2 piezo-composites for ultrasonic transducer.SENSORS AND ACTUATORS A-PHYSICAL.2021.332.Lin, Pengfei; Zhu, Yuanbo; Chen, Dongdong; Fei, Chunlong; Chen, Zhaobao; Li, Di; Zhang, Shuxiao; Feng, Wei; Jiang, Zhishui; Wen, Li; Chai, Changchun; Yang, Yintang
364. Generic water-based spray-assisted growth for scalable high-efficiency carbon-electrode all-inorganic perovskite solar cells.ISCIENCE.2021.24.11.Zhang, Zeyang; Ba, Yanshuang; Chen, Dandan; Ma, Junxiao; Zhu, Weidong; Xi, He; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
365. Collaborative Multi-Resource Allocation in Terrestrial-Satellite Network Towards 6G.IEEE TRANSACTIONS ON WIRELESS COMMUNICATIONS.2021.20.11.Fu, Shu; Gao, Jie; Zhao, Lian
366. Electrical contacts in monolayer Ga2O3 field-effect tansistors.APPLIED SURFACE SCIENCE.2021.564.Dong, Linpeng; Zhou, Shun; Pu, Kaiwen; Yang, Chen; Xin, Bin; Peng, Bo; Liu, Weiguo
367. A Skin-Inspired Artificial Mechanoreceptor for Tactile Enhancement and Integration.ACS NANO.2021.15.10.Li, Fanfan; Wang, Rui; Song, Chunyan; Zhao, Momo; Ren, Huihui; Wang, Saisai; Liang, Kun; Li, Dingwei; Ma, Xiaohua; Zhu, Bowen; Wang, Hong; Hao, Yue
368. Ima2 C-32: An orthorhombic carbon allotrope with direct band gap.DIAMOND AND RELATED MATERIALS.2021.120.Fan, Qingyang; Zhao, Ruida; Jiang, Li; Zhang, Wei; Song, Yanxing; Yun, Sining
369. Analysis of electronic structure and properties of Ga2O3/CuAlO2heterojunction.APPLIED SURFACE SCIENCE.2021.568.Yu, Miao; Wang, Hanqing; Wei, Wei; Peng, Bo; Yuan, Lei; Hu, Jichao; Zhang, Yuming; Jia, Renxu
370. Tuning the intrinsic electric field of Janus-TMDs to realize high-performance beta-Ga2O3device based on beta-Ga2O3/Janus-TMD heterostructures.MATERIALS TODAY PHYSICS.2021.21.Yuan, Haidong; Su, Jie; Zhang, Pengliang; Lin, Zhenhua; Zhang, Jincheng; Zhang, Jie; Chang, Jingjing; Hao, Yue
371. P2(1)3 BN: a novel large-cell boron nitride polymorph.COMMUNICATIONS IN THEORETICAL PHYSICS.2021.73.12.Fan, Qing-Yang; Wu, Nan; Chen, Shuai-Min; Jiang, Li; Zhang, Wei; Yu, Xin-Hai; Yun, Si-Ning
372. Electrically controllable zero-energy states in Rashba oxide heterostructure with in-plane magnetic field cooling.APPLIED PHYSICS LETTERS.2021.119.19.Ma, Haijiao Harsan; Gan, Xin; Li, Lei; Zhang, Yuguo; Zhang, Yue-ying; Hui, Yu-peng; Zhou, Jianhui; Zhong, Zhicheng; Zhang, Jincheng; Hao, Yue
373. Reveal the Humidity Effect on the Phase Pure CsPbBr3 Single Crystals Formation at Room Temperature and Its Application for Ultrahigh Sensitive X-Ray Detector.ADVANCED SCIENCE.2021.9.2.Di, Jiayu; Li, Haojin; Su, Jie; Yuan, Haidong; Lin, Zhenhua; Zhao, Kui; Chang, Jingjing; Hao, Yue
374. Thermodynamics of Ion-Cutting of beta-Ga2O3 and Wafer-Scale Heterogeneous Integration of a beta-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate.ACS APPLIED ELECTRONIC MATERIALS.2021.Xu, Wenhui; You, Tiangui; Mu, Fengwen; Shen, Zhenghao; Lin, Jiajie; Huang, Kai; Zhou, Min; Yi, Ailun; Qu, Zhenyu; Suga, Tadatomo; Han, Genquan; Ou, Xin
375. Spike-Enabled Audio Learning in Multilevel Synaptic Memristor Array-Based Spiking Neural Network.ADVANCED INTELLIGENT SYSTEMS.2021.Wu, Xulei; Dang, Bingjie; Wang, Hong; Wu, Xiulong; Yang, Yuchao
376. Gas-filled protein nanostructures as cavitation nuclei for molecule-specific sonodynamic therapy.ACTA BIOMATERIALIA.2021.136.Song, Lin; Hou, Xuandi; Wong, Kin Fung; Yang, Yaoheng; Qiu, Zhihai; Wu, Yong; Hou, Shang; Fei, Chunlong; Guo, Jinghui; Sun, Lei
377. An Improved Map-Drift Algorithm for Unmanned Aerial Vehicle SAR Imaging.IEEE GEOSCIENCE AND REMOTE SENSING LETTERS.2021.18.11.Huang, Yan; Liu, Feiyang; Chen, Zhanye; Li, Jie; Hong, Wei
378. Quantitative Local Probing of Polarization with Application on HfO2-Based Thin Films.SMALL METHODS.2021.5.11.Kwon, Owoong; Kang, Seunghun; Jo, Sanghyun; Kim, Yun Do; Han, Hee; Park, Yeehyun; Lu, Xiaoli; Lee, Woo; Heo, Jinseong; Alexe, Marin; Kim, Yunseok
379. Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect.NANO-MICRO LETTERS.2021.13.1.Liang, Kun; Li, Dingwei; Ren, Huihui; Zhao, Momo; Wang, Hong; Ding, Mengfan; Xu, Guangwei; Zhao, Xiaolong; Long, Shibing; Zhu, Siyuan; Sheng, Pei; Li, Wenbin; Lin, Xiao; Zhu, Bowen
380. Recent progress of integrated circuits and optoelectronic chips.SCIENCE CHINA-INFORMATION SCIENCES.2021.64.10.Hao, Yue; Xiang, Shuiying; Han, Genquan; Zhang, Jincheng; Ma, Xiaohua; Zhu, Zhangming; Guo, Xingxing; Zhang, Yahui; Han, Yanan; Song, Ziwei; Liu, Yan; Yang, Ling; Zhou, Hong; Shi, Jiangyi; Zhang, Wei; Xu, Min; Zhao, Weisheng; Pan, Biao; Huang, Yangqi; Liu, Qi; Cai, Yimao; Zhu, Jian; Ou, Xin; You, Tiangui; Wu, Huaqiang; Gao, Bin; Zhang, Zhiyong; Guo, Guoping; Chen, Yonghua; Liu, Yong; Chen, Xiangfei; Xue, Chunlai; Wang, Xingjun; Zhao, Lixia; Zou, Xihua; Yan, Lianshan; Li, Ming
381. An Efficient Graph-Based Algorithm for Time-Varying Narrowband Interference Suppression on SAR System.IEEE TRANSACTIONS ON GEOSCIENCE AND REMOTE SENSING.2021.59.10.Huang, Yan; Zhang, Lei; Yang, Xi; Chen, Zhanye; Liu, Jun; Li, Jie; Hong, Wei
382. Skin-Inspired Capacitive Stress Sensor with Large Dynamic Range via Bilayer Liquid Metal Elastomers.ADVANCED MATERIALS TECHNOLOGIES.2021.Yang, Jiayi; Kwon, Ki Yoon; Kanetkar, Shreyas; Xing, Ruizhe; Nithyanandam, Praneshnandan; Li, Yang; Jung, Woojin; Gong, Wei; Tuman, Mary; Shen, Qingchen; Wang, Meixiang; Ghosh, Tushar; Chatterjee, Kony; Wang, Xinxin; Zhang, Dongguang; Kim, Tae-il; Vi Khanh Truong; Dickey, Michael D.
383. Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET.MICROMACHINES.2021.12.10.Chong, Chen; Liu, Hongxia; Wang, Shulong; Wu, Xiaocong
384. Flexible High-Stability Self-Variable-Voltage Monolithic Integrated System Achieved by High-Brightness LED for Information Transmission.SMALL.2021.17.45.Jia, Yanqing; Guo, Haibin; Ning, Jing; Zhang, Jincheng; Wang, Dong; Wang, Boyu; Wu, Haidi; Shen, Xue; Zhang, Chi; Hao, Yue
385. Performance Enhancement of All-Inorganic Carbon-Based CsPbIBr2 Perovskite Solar Cells Using a Moth-Eye Anti-Reflector.NANOMATERIALS.2021.11.10.Lan, Wensheng; Chen, Dazheng; Guo, Qirui; Tian, Baichuan; Xie, Xiaoping; He, Yibing; Chai, Wenming; Liu, Gang; Dong, Peng; Xi, He; Zhu, Weidong; Zhang, Chunfu
386. Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film.CRYSTENGCOMM.2021.23.42.Jia, Yanqing; Wu, Haidi; Zhao, Jianglin; Guo, Haibin; Zeng, Yu; Wang, Boyu; Zhang, Chi; Zhang, Yachao; Ning, Jing; Zhang, Jincheng; Zhang, Tao; Wang, Dong; Hao, Yue
387. Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth.CRYSTAL GROWTH & DESIGN.2021.21.10.Wu, Haidi; Ning, Jing; Jia, Yanqing; Yan, Chaochao; Zeng, Yu; Guo, Haibin; Zhao, Jianglin; Wang, Yanbo; Zhang, Jincheng; Wang, Dong; Hao, Yue
388. Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications.APPLIED PHYSICS LETTERS.2021.119.16.Wang, Boyu; Ning, Jing; Zhang, Jincheng; Wang, Dong; Yang, Xinyi; Jia, Yanqing; Zhang, Chi; Zeng, Yu; Hao, Yue
389. Impacts of the Electron Transport Layer Surface Reconstruction on the Buried Interface in Perovskite Optoelectronic Devices.The journal of physical chemistry letters.2021.12.49.Zhang, Siyu; Su, Jie; Zhang, Jincheng; Lin, Zhenhua; Yuan, Haidong; Chang, Jingjing; Hao, Yue
390. Effect of GaN-on-diamond integration technology on its thermal properties.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2021.36.10.Li, Yao; Zheng, Zixuan; Zhang, Chao; Pu, Hongbin
391. Size-controllable porous flower-like NiCo2O fabricated via sodium tartrate assisted hydrothermal synthesis for lightweight electromagnetic absorber.JOURNAL OF COLLOID AND INTERFACE SCIENCE.2021.602.Zhou, Xuejiao; Wen, Junwu; Wang, Zhenni; Ma, Xiaohua; Wu, Hongjing
392. Design of bevel junction termination extension structure for high-performance vertical GaN Schottky barrier diode.SUPERLATTICES AND MICROSTRUCTURES.2021.159. Wang, Tingting; Li, Xiaobo; Pu, Taofei; Cheng, Shaoheng; Li, Liuan; Wang, Qiliang; Li, Hongdong; Ao, Jin-Ping
393. Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/S3N4 Bilayer Passivation.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.69.2.Liu, Jielong; Mi, Minhan; Zhu, Jiejie; Liu, Siyu; Wang, Pengfei; Zhou, Yuwei; Zhu, Qing; Wu, Mei; Lu, Hao; Hou, Bin; Wang, Hong; Cai, Xiaolong; Zhang, Yu; Duan, Xiangyang; Yang, Ling; Ma, Xiaohua; Hao, Yue
394. Recent advances in resistive random access memory based on lead halide perovskite.INFOMAT.2021.3.3.Di, Jiayu; Du, Jianhui; Lin, Zhenhua; Liu, Shengzhong (Frank); Ouyang, Jianyong; Chang, Jingjing
395. Superior Pseudocapacitive Storage of a Novel Ni3Si2/NiOOH/Graphene Nanostructure for an All-Solid-State Supercapacitor.NANO-MICRO LETTERS.2021.13.1.Ning, Jing; Xia, Maoyang; Wang, Dong; Feng, Xin; Zhou, Hong; Zhang, Jincheng; Hao, Yue
396. Enhanced efficiency and stability of planar perovskite solar cells using SnO2:InCl3 electron transport layer through synergetic doping and passivation approaches.CHEMICAL ENGINEERING JOURNAL.2021.407.Guo, Xing; Du, Jianhui; Lin, Zhenhua; Su, Jie; Feng, Liping; Zhang, Jincheng; Hao, Yue; Chang, Jingjing
397. Development of a bi-compound heterogeneous cocatalyst modified p-Si photocathode for boosting the photoelectrochemical water splitting performance dagger.JOURNAL OF MATERIALS CHEMISTRY A.2021.9.14.Chen, Zhiwei; Li, Yang; Wang, Lin; Bu, Yuyu; Ao, Jin-Ping
398. Synchronous Interface Modification and Bulk Passivation via a One-Step Cesium Bromide Diffusion Process for Highly Efficient Perovskite Solar Cells.ACS APPLIED MATERIALS & INTERFACES.2021.13.8.Pang, Shangzheng; Zhang, Chunfu; Dong, Hang; Zhang, Zeyang; Chen, Dazheng; Zhu, Weidong; Chang, Jingjing; Lin, Zhenhua; Zhang, Jincheng; Hao, Yue
399. Two-Dimensional Tetrahex-GeC2: A Material with Tunable Electronic and Optical Properties Combined with Ultrahigh Carrier Mobility.ACS APPLIED MATERIALS & INTERFACES.2021.13.12.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Sun, Minglei; Song, Yanxing; Yang, Yintang; Schwingenschlogl, Udo
400. Slow halide exchange in CsPbIBr2 films for high-efficiency, carbon-based, all-inorganic perovskite solar cells.SCIENCE CHINA-MATERIALS.2021.64.9.Zhang, Zeyang; Chen, Dandan; Zhu, Weidong; Ma, Junxiao; Chai, Wenming; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
401. Training a Multi-Layer Photonic Spiking Neural Network With Modified Supervised Learning Algorithm Based on Photonic STDP.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS.2021.27.2.Xiang, Shuiying; Ren, Zhenxing; Zhang, Yahui; Song, Ziwei; Guo, Xingxing; Han, Genquan; Hao, Yue
402. Current Transport Mechanism of High-Performance Novel GaN MIS Diode.IEEE ELECTRON DEVICE LETTERS.2021.42.3.Zhang, Tao; Zhang, Yanni; Zhang, Jincheng; Li, Xiangdong; Lv, Yueguang; Hao, Yue
403. Two-Dimensional (C6H5C2H4NH3)(2)PbI4 Perovskite Single Crystal Resistive Switching Memory Devices.IEEE ELECTRON DEVICE LETTERS.2021.42.3.Di, Jiayu; Lin, Zhenhua; Su, Jie; Wang, Jiaping; Zhang, Jincheng; Liu, Shengzhong; Chang, Jingjing; Hao, Yue
404. Compact and Low Leakage Devices for Bidirectional Low-Voltage ESD Protection Applications.IEEE ELECTRON DEVICE LETTERS.2021.42.3.Du, Feibo; Qing, Yihong; Hou, Fei; Zou, Kepeng; Song, Wenqiang; Chen, Ruibo; Liu, Jizhi; Chen, Le; Liou, Juin J.; Liu, Zhiwei
405. Effects of growth pressure on the characteristics of the beta-Ga2O3 thin films deposited on (0001) sapphire substrates.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.2021.123.Zhang, Tao; Li, Yifan; Feng, Qian; Zhang, Yachao; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
406. Making path selection faster: a routing algorithm for ONoC.OPTICS EXPRESS.2021.29.7.Zhu, Lijing; Gu, Huaxi; Yang, Yintang; Chen, Yawen
407. beta-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/R-on,R-sp value of 0.93 GW/cm(2).APPLIED PHYSICS LETTERS.2021.118.12.Yan, Qinglong; Gong, Hehe; Zhang, Jincheng; Ye, Jiandong; Zhou, Hong; Liu, Zhihong; Xu, Shengrui; Wang, Chenlu; Hu, Zhuangzhuang; Feng, Qian; Ning, Jing; Zhang, Chunfu; Ma, Peijun; Zhang, Rong; Hao, Yue
408. Multilevel oxygen-vacancy conductive filaments in beta-Ga2O3 based resistive random access memory.PHYSICAL CHEMISTRY CHEMICAL PHYSICS.2021.23.10.Hou, Jie; Guo, Rui; Su, Jie; Du, Yawei; Lin, Zhenhua; Zhang, Jincheng; Hao, Yue; Chang, Jingjing
409. Study of a Gate-Engineered Vertical TFET with GaSb/GaAs0.5Sb0.5 Heterojunction.MATERIALS.2021.14.6.Xie, Haiwu; Chen, Yanning; Liu, Hongxia; Guo, Dan
410. oI20-carbon: A new superhard carbon allotrope.DIAMOND AND RELATED MATERIALS.2021.113.Zhou, Lin; Chai, Changchun; Zhang, Wei; Song, Yanxing; Zhang, Zheren; Yang, Yintang
411. An Efficient Optimization Design for 1 MHz Ultrasonic Transmitting Transducer.IEEE SENSORS JOURNAL.2021.21.6.Chen, Dongdong; Zhao, Jianxin; Fei, Chunlong; Li, Di; Liu, Yusang; Chen, Qiang; Lou, Lifei; Feng, Wei; Yang, Yintang
412. A TD-ADC for IR-UWB Radars With Equivalent Sampling Technology and 8-GS/s Effective Sampling Rate.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS.2021.68.3.Zhu, Zhangming; Zhu, Yu; Li, Dengquan; Liu, Maliang
413. Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.3.Bai, Zhiqiang; Tang, Xiaoyan; Xie, Siliang; He, Yanjing; Yuan, Hao; Song, Qingwen; Zhang, Yuming
414. Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68 3.He, Yue; Wang, Xiao; Zhou, Ji-Yu; Wang, Ting-Ting; Ren, Meng-Ke; Chen, Guo-Qiang; Pu, Tao-Fei; Li, Xiao-Bo; Jia, Mao; Bu, Yu-Yu; Ao, Jin-Ping
415. A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68.3.Lyu, Zhijun; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Zhu, Yi; Sun, Jiale; Li, Miao; Lu, Bin
416. Channel Properties of Ga2O3-on-SiC MOSFETs.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021.68 3.Wang, Yibo; Xu, Wenhui; Han, Genquan; You, Tiangui; Mu, Fengwen; Hu, Haodong; Liu, Yan; Zhang, Xinchuang; Huang, Hao; Suga, Tadatomo; Ou, Xin; Ma, Xiaohua; Hao, Yue
417. Breakdown point transfer theory for Si/SiC heterojunction LDMOS with deep drain region.SUPERLATTICES AND MICROSTRUCTURES.2021.151.Wang, Yulong; Duan, Baoxing; Sun, Licheng; Yang, Xin; Huang, Yunjia; Yang, Yintang
418. Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse.ELECTRONICS.2021.10.6.Lin, Jinfu; Wang, Shulong; Liu, Hongxia
419. Wideband circularly polarized cross-dipole antenna with folded ground plane.IET MICROWAVES ANTENNAS & PROPAGATION.2021.15.5.Wang, Lei; Chen, Ke-wen; Huang, Quan; Shao, Wei-heng; Fang, Wen-xiao; Lu, Guo-Guang; Huang, Yun; En, Yun-fei
420. H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric.AIP ADVANCES.2021.11.3.Ren, Zeyang; Xing, Yufei; Lv, Dandan; Xu, Jiamin; Zhang, Jinfeng; Zhang, Jincheng; Su, Kai; Zhang, Chunfu; Zhang, Hong; He, Qi; Hao, Yue
421. Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit*.CHINESE PHYSICS B.2021.30.4.Duan, Baoxing; Huang, Xin; Song, Haitao; Wang, Yandong; Yang, Yintang
422. A Three-Stage Coarse-Fine-Tuning Analog-Assisted Digital LDO.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS.2021.30.3.Liu, Lianxi; Chen, Yiwei; Liao, Xufeng; Mu, Junchao; Yang, Yintang
423. A 0.6 V 2.7 mW 94.3% locking range injection-locked frequency divider using modified varactor-less Colpitts oscillator topology.IET CIRCUITS DEVICES & SYSTEMS.2021.Li, Zhen; Li, Zhenrong; Quan, Xing; Wang, Zeyuan; Li, Xinyu; Zhuang, Yiqi
424. Study on cut-off characteristics of sub-nanosecond silicon carbide PiN switch.INTERNATIONAL JOURNAL OF MODERN PHYSICS B.2021.35.7.Wu, Zhaoyang; Lu, Wei; Bao, Xiangyang; Meng, Fanbao; Yang, Zhoubing; Sun, Qian; Zhao, Fangzhou; Wang, Yutian
