1. Modulating crystal growth of formamidinium-caesium perovskites for over 200 cm(2) photovoltaic sub-modules.NATURE ENERGY. 2022.7.6.(528-536). Bu, Tongle; Ono, Luis K.; Li, Jing; Su, Jie; Tong, Guoqing; Zhang, Wei; Liu, Yuqiang; Zhang, Jiahao; Chang, Jingjing; Kazaoui, Said; Huang, Fuzhi; Cheng, Yi-Bing; Qi, Yabing
2. The First Record of Diurnal Performance Evolution of Perovskite Solar Cells in Near Space.ADVANCED ENERGY MATERIALS. 2022. Wang, Hui; Jiang, Xiao; Cao, Yuexian; Qian, Lulu; Liu, Yang; Huang, Min; Zhang, Chunfu; Hao, Yue; Wang, Kai; Liu, Shengzhong
3. Recent Progress of Electrode Materials for Flexible Perovskite Solar Cells.NANO-MICRO LETTERS. 2022.14.1. Xu, Yumeng; Lin, Zhenhua; Wei, Wei; Hao, Yue; Liu, Shengzhong; Ouyang, Jianyong; Chang, Jingjing
4. Controlled Optoelectronic Response in van der Waals Heterostructures for In-Sensor Computing.ADVANCED FUNCTIONAL MATERIALS. 2022.32.45. Yang, Qiyu; Luo, Zheng-Dong; Zhang, Dawei; Zhang, Mingwen; Gan, Xuetao; Seidel, Jan; Liu, Yan; Hao, Yue; Han, Genquan
5. Synchronous Passivation of Defects with Low Formation Energies via Terdentate Anchoring Enabling High Performance Perovskite Solar Cells with Efficiency over 24%.ADVANCED FUNCTIONAL MATERIALS. 2022.32.24. Zhao, Wenhao; Guo, Pengfei; Su, Jie; Fang, Zhiyu; Jia, Ning; Liu, Chen; Ye, Linfeng; Ye, Qian; Chang, Jingjing; Wang, Hongqiang
6. Coding Piezoelectric Metasurfaces.ADVANCED FUNCTIONAL MATERIALS. 2022.32.47. Li, Zhaoxi; Fei, Chunlong; Yang, Shenghui; Hou, Chenxue; Zhao, Jianxin; Li, Yi; Zheng, Chenxi; Wu, Heping; Quan, Yi; Zhao, Tianlong; Chen, Dongdong; Li, Di; Niu, Gang; Ren, Wei; Xiao, Meng; Yang, Yintang
7. Two-Inch Wafer-Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF-Sputtering.ADVANCED FUNCTIONAL MATERIALS. 2022.32.38. Li, Qiang; Wang, Mingdi; Bai, Yunhe; Zhang, Qifan; Zhang, Haoran; Tian, Zhenhuan; Guo, Yanan; Zhu, Jingping; Liu, Yuhuai; Yun, Feng; Wang, Tao; Hao, Yue
8. Flexible perovskite solar cells: Material selection and structure design.APPLIED PHYSICS REVIEWS. 2022.9.2. Xu, Yumeng; Lin, Zhenhua; Zhang, Jincheng; Hao, Yue; Ouyang, Jianyong; Liu, Shengzhong; Chang, Jingjing
9. Recent progress and development of interface integrated circuits for piezoelectric energy harvesting.NANO ENERGY. 2022.94. Li, Di; Wang, Chun; Cui, Xinhui; Chen, Dongdong; Fei, Chunlong; Yang, Yintang
10. Surface reconstruction strategy improves the all-inorganic CsPbIBr2 based perovskite solar cells and photodetectors performance.NANO ENERGY. 2022.94. He, Jian; Su, Jie; Di, Jiayu; Lin, Zhenhua; Zhang, Siyu; Ma, Jing; Zhang, Jincheng; Liu, Shengzhong; Chang, Jingjing; Hao, Yue
11. Self-Powered Bidirectional Photoresponse in High-Detectivity WSe2 Phototransistor with Asymmetrical van der Waals Stacking for Retinal Neurons Emulation.ACS NANO. 2022. Zhang, Yichi; Wang, Liming; Lei, Yuanying; Wang, Bo; Lu, Yao; Yao, Youyuan; Zhang, Ningning; Lin, Dongdong; Jiang, Zuimin; Guo, Hui; Zhang, Jincheng; Hu, Huiyong
12. Electrically Tunable Second Harmonic Generation in Atomically Thin ReS2.ACS NANO. 2022.16.4.(6404-6413). Gan, Xuetao; Zhang, Mingwen; Liu, Yan; Luo, Zheng-Dong; Wang, Jing; Han, Nannan; Hao, Yue; Zhao, Jianlin; Chen, Xiaoqing
13. Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing.ACS NANO. 2022.16.2.(3362-3372). Luo, Zheng-Dong; Zhang, Siqing; Liu, Yan; Zhang, Dawei; Gan, Xuetao; Seidel, Jan; Liu, Yang; Han, Genquan; Alexe, Marin; Hao, Yue
14. Ultra-wide bandgap semiconductor Ga2O3 power diodes.NATURE COMMUNICATIONS. 2022.13.1. Zhang, Jincheng; Dong, Pengfei; Dang, Kui; Zhang, Yanni; Yan, Qinglong; Xiang, Hu; Su, Jie; Liu, Zhihong; Si, Mengwei; Gao, Jiacheng; Kong, Moufu; Zhou, Hong; Hao, Yue
15. Bio-Inspired In-Sensor Compression and Computing Based on Phototransistors.SMALL. 2022.18.23. Wang, Rui; Wang, Saisai; Liang, Kun; Xin, Yuhan; Li, Fanfan; Cao, Yaxiong; Lv, Jiaxin; Liang, Qi; Peng, Yaqian; Zhu, Bowen; Ma, Xiaohua; Wang, Hong; Hao, Yue
16. Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification.SMALL. 2022.18.21. Li, Yang; Dai, Xianying; Bu, Yuyu; Zhang, Hanzhi; Liu, Jie; Yuan, Wenyu; Guo, Xiaohui; Ao, Jin-Ping
17. DnRCNN: Deep Recurrent Convolutional Neural Network for HSI Destriping.IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS. 2022. Guan, Juntao; Lai, Rui; Li, Huanan; Yang, Yintang; Gu, Lin
18. Defects and doping engineering towards high performance lead-free or lead-less perovskite solar cells. JOURNAL OF ENERGY CHEMISTRY. 2022.68.(420-438). Cao, Wenying; Hu, Zhaosheng; Lin, Zhenhua; Guo, Xing; Su, Jie; Chang, Jingjing; Hao, Yue
19. Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film.NANO LETTERS. 2022.22.12.(4792-4799). Guan, Zhao; Li, Yun-Kangqi; Zhao, Yi-Feng; Peng, Yue; Han, Genquan; Zhong, Ni; Xiang, Ping-Hua; Chu, Jun-Hao; Duan, Chun-Gang
20. Dithiol surface treatment towards improved charge transfer dynamic and reduced lead leakage in lead halide perovskite solar cells.ECOMAT. 2022.4.3. Wang, Qingrui; Lin, Zhenhua; Su, Jie; Xu, Yumeng; Guo, Xing; Li, Yingchun; Zhang, Miao; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
21. Low Trap Density Para-F Substituted 2D PEA2PbX4 (X= Cl, Br, I) Single Crystals with Tunable Optoelectrical Properties and High Sensitive X-Ray Detector Performance.RESEARCH. 2022.2022. Di, Jiayu; Li, Haojin; Chen, Li; Zhang, Siyu; Hu, Yinhui; Sun, Kai; Peng, Bo; Su, Jie; Zhao, Xue; Fan, Yuqi; Lin, Zhenhua; Hao, Yue; Gao, Peng; Zhao, Kui; Chang, Jingjing
22. Elastic strain modulation of energy bandgap in ?-Ga2O3 sheet: Experimental and computational investigations .MATERIALS TODAY PHYSICS. 2022.25. Wang, Dangpo; Lu, Xiaoli; Ding, Xinkai; Zhao, Yue; Gou, Gaoyang; Shi, Zekun; Zhang, Zhouning; Li, Jianing; Cong, Zhezhe; Ma, Xiaohua; Hao, Yue
23. Efficient Second-Harmonic Generation from Silicon Slotted Nanocubes with Bound States in the Continuum.LASER & PHOTONICS REVIEWS. 2022.16.5. Fang, Cizhe; Yang, Qiyu; Yuan, Qingchen; Gu, Linpeng; Gan, Xuetao; Shao, Yao; Liu, Yan; Han, Genquan; Hao, Yue
24. Ti3C2Tx MXene Nanoflakes Embedded with Copper Indium Selenide Nanoparticles for Desalination and Water Purification through High-Efficiency Solar-Driven Membrane Evaporation.ACS APPLIED MATERIALS & INTERFACES. 2022.14.4.(5876-5886). Wang, Yijin; Nie, Junli; He, Zhang; Zhi, Yuanhong; Ma, Xiaohua; Zhong, Peng
25. Low-Temperature Solution-Processed Cu2AgBiI6 Films for High Performance Photovoltaics and Photodetectors.ACS APPLIED MATERIALS & INTERFACES. 2022.14.16.(18498-18505). Zhang, Feijuan; Hu, Zhaosheng; Zhang, Boyao; Lin, Zhenhua; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
26. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2.ACS APPLIED MATERIALS & INTERFACES. 2022.14.8.(11028-11037). Zhang, Fan; Luo, Zheng-Dong; Yang, Qiyu; Zhou, Jiuren; Wang, Jin; Zhang, Zhaohao; Fan, Qikui; Peng, Yue; Wu, Zhenhua; Liu, Fei; Chen, Shiyou; He, Dongsheng; Yin, Huaxiang; Han, Genquan; Liu, Yan; Hao, Yue
27. Low-voltage and high-gain WSe2 avalanche phototransistor with an out-of-plane WSe2/WS2 heterojunction.NANO RESEARCH. 2022. Meng, Lingyao; Zhang, Ningning; Yang, Maolong; Yuan, Xixi; Liu, Maliang; Hu, Huiyong; Wang, Liming
28. Linear dichroism and polarization controllable persistent spin helix in two-dimensional ferroelectric ZrOI2 monolayer.NANO RESEARCH. 2022.15.7.(6779- 6789). Yang, Niuzhuang; Gou, Gaoyang; Lu, Xiaoli; Hao, Yue
29. Multiposition Controllable Gate WS2/MoS2 Heterojunction Phototransistor and Its Applications in Optoelectronic Logic Operation and Emulation of Neurotransmission.ADVANCED OPTICAL MATERIALS. 2022.10.12. Zhang, Yichi; Wang, Liming; Yang, Maolong; Lin, Dongdong; Wang, Bo; Zhang, Ningning; Jiang, Zuimin; Liu, Maliang; Zhu, Zhangming; Hu, Huiyong
30. Printable Coffee-Ring Structures for Highly Uniform All-Oxide Optoelectronic Synaptic Transistors.ADVANCED OPTICAL MATERIALS. 2022. Liang, Kun; Wang, Rui; Ren, Huihui; Li, Dingwei; Tang, Yingjie; Wang, Yan; Chen, Yitong; Song, Chunyan; Li, Fanfan; Liu, Guolei; Wang, Hong; Leow, Wan Ru; Zhu, Bowen
31. Intermediate Phase-Assisted Sequential Deposition Toward 15.24%-Efficiency Carbon-Electrode Cspbi(2)br Perovskite Solar Cells.SOLAR RRL. 2022.6.6. Zhu, Weidong; Ma, Junxiao; Chai, Wenming; Han, Tianjiao; Chen, Dandan; Xie, Xiaoping; Liu, Gang; Dong, Peng; Xi, He; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
32. Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate.SCIENCE CHINA-MATERIALS. 2022.65.3.(795-802). Chen, Dazheng; Yuan, Peng; Zhao, Shenglei; Liu, Shuang; Xin, Qian; Song, Xiufeng; Yan, Shiqi; Zhang, Yachao; Xi, He; Zhu, Weidong; Zhang, Weihang; Zhang, Jiaqi; Zhou, Hong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
33. Wafer-scale single-crystalline beta-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures.SCIENCE CHINA-MATERIALS. 2022. Shen, Zhenghao; Xu, Wenhui; Chen, Yang; Lin, Jiajie; Xie, Yuhuan; Huang, Kai; You, Tiangui; Han, Genquan; Ou, Xin
34. Solution-processed transparent p-type orthorhombic K doped SnO films and their application in a phototransistor.NANOSCALE. 2022.14.37.(13763-13770). Qin, Li; Yuan, Shuoguo; Chen, Zequn; Bai, Xue; Xu, Jianmei; Zhao, Ling; Zhou, Wei; Wang, Qing; Chang, Jingjing; Sun, Jian
35. Bilinear Feature Fusion Convolutional Neural Network for Distributed Tactile Pressure Recognition and Understanding via Visualization.IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS. 2022.69.6.(6391-6400). Chu, Jie; Cai, Jueping; Li, Long; Fan, Yang; Su, Bowen
36. 0D-3D mixed-dimensional perovskite Cs4Pb(BrCl)(6)-CsPbBr2-xCl1+x films for stable and sensitive self-powered, high-temperature photodetectors.JOURNAL OF MATERIALS CHEMISTRY C. 2022.10.46.(17628-17637). Ba, Yanshuang; Zhu, Weidong; Huangfu, Sunjie; Xi, He; Han, Tianjiao; Wang, Tianran; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
37. In situ, seed-free formation of a Ruddlesden-Popper perovskite Cs2PbI2Cl2 nanowires/PbI2 heterojunction for a high-responsivity, self-powered photodetector.JOURNAL OF MATERIALS CHEMISTRY C. 2022.10.9.(3538-3546). Ba, Yanshuang; Xie, Xiaoping; Zhu, Weidong; Ma, Junxiao; Liu, Gang; Dong, Peng; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
38. Recent progress on the effects of impurities and defects on the properties of Ga2O3.JOURNAL OF MATERIALS CHEMISTRY C. 2022.10.37.(13395-13436). Wang, Yifei; Su, Jie; Lin, Zhenhua; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
39. Optical generation and electric control of pure spin photocurrent in a ferroelectric Ruddlesden-Popper perovskite (MA)(2)Pb(SCN)(2)I-2 monolayer.JOURNAL OF MATERIALS CHEMISTRY C. 2022.10.25.(9602-9612). Zhao, Yue; Mu, Xingchi; Gou, Gaoyang; Zhou, Jian; Lu, Xiaoli; Hao, Yue
40. Programmable WSe2/Ge Heterojunction Field-Effect Transistor with Visible-Infrared Wavelength-Distinguishing Detection Capability.ADVANCED ELECTRONIC MATERIALS. 2022. Yang, Maolong; Wang, Liming; Lu, Yao; Wang, Bo; Zhang, Ningning; Liu, Maliang; Guo, Hui; Lin, Dongdong; Zhang, Jincheng; Hu, Huiyong
41. Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing.ADVANCED ELECTRONIC MATERIALS. 2022.8.4. Zhao, Momo; Wang, Saisai; Li, Dingwei; Wang, Rui; Li, Fanfan; Wu, Mengqi; Liang, Kun; Ren, Huihui; Zheng, Xiaorui; Guo, Chengchen; Ma, Xiaohua; Zhu, Bowen; Wang, Hong; Hao, Yue
42. Circuit and control strategy optimization of solid-state power controller for all-electric system.SUSTAINABLE ENERGY TECHNOLOGIES AND ASSESSMENTS. 2022.52. Zhuang, Yiqi; Lu, Yufang; Huang, Zhiai; Wu, Xuanhui; Chen, Junxiang
43. Crystal-reconstructed BiVO4 semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection.JOURNAL OF MATERIALS CHEMISTRY B. 2022.10.6.(870-879). Li, Yang; Dai, Xianying; He, Lin; Bu, Yuyu; Ao, Jin-Ping
44. Charge-selective-contact-dependent halide phase segregation in CsPbIBr2 perovskite solar cells and its correlation to device degradation.APPLIED SURFACE SCIENCE. 2022.595. Chai, Wenming; Zhu, Weidong; Ma, Junxiao; Huangfu, Sunjie; Zhang, Zeyang; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
45. Stress enhanced photoelectric response in flexible AlN single-crystalline thin films.APPLIED SURFACE SCIENCE. 2022.585. Shi, Zekun; Lu, Xiaoli; Tang, Xiaowen; Wang, Dangpo; Cong, Zhezhe; Ma, Xiaohua; Hao, Yue
46. Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures.APPLIED SURFACE SCIENCE. 2022.586. Cong, Zhezhe; Lu, Xiaoli; Tang, Xiaowen; Li, Jianing; Shi, Zekun; Wang, Dangpo; He, Yunlong; Ma, Xiaohua; Hao, Yue
47. Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors.APPLIED SURFACE SCIENCE. 2022.581. Yang, Kun; Wang, Shulong; Han, Tao; Liu, Hongxia
48. All-inorganic lead-free Cs2XCl6 (X = Hf, Zr, Te) perovskites for humidity detection.APPLIED SURFACE SCIENCE. 2022.603. Chang, Qijie; Wu, Daofu; Huang, Yanyi; Liang, Chengyao; Liu, Libo; Liu, Huanbin; Liu, Yan; Qiu, Jing; Tang, Xiaosheng; Han, Genquan
49. The formation and role of the SiO2 oxidation layer in the 4H-SiC/beta-Ga2O3 interface.APPLIED SURFACE SCIENCE. 2022.581. Zhu, Naxin; Ma, Kaichuang; Xue, Xiangyi; Su, Jie
50. Modulated interfacial band alignment of beta-Ga2O3/GaN heterojunction by the polarization charge transfer.APPLIED SURFACE SCIENCE. 2022.586. Zhu, Naxin; Ma, Kaichuang; Zhang, Pengliang; Xue, Xiangyi; Su, Jie
51. First-principles study on the electronic properties of layered Ga2O3/TeO2 heterolayers for high-performance electronic devices.APPLIED SURFACE SCIENCE. 2022.602. Dong, Linpeng; Li, Penghui; Zhao, Yan; Miao, Yuanhao; Peng, Bo; Xin, Bin; Liu, Weiguo
52. Controlling Memristance and Negative Differential Resistance in Point-Contacted Metal-Oxides-Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping.ADVANCED INTELLIGENT SYSTEMS. 2022.4.6. Gan, Xin; Zhang, Yueying; Hui, Yupeng; Liu, Shaoxuan; Wang, Lei; Zhang, Jincheng; Hao, Yue; Ma, Haijiao Harsan
53. Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.SCIENCE CHINA-INFORMATION SCIENCES. 2022.65.10. Liu, Siyu; Ma, Xiaohua; Zhu, Jiejie; Mi, Minhan; Guo, Jingshu; Liu, Jielong; Chen, Yilin; Zhu, Qing; Yang, Ling; Hao, Yue
54. Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA.SCIENCE CHINA-INFORMATION SCIENCES. 2022.65.8. Song, Ziwei; Xiang, Shuiying; Cao, Xingyu; Zhao, Shihao; Hao, Yue
55. Unidirectional p-GaN gate HEMT with composite source-drain field plates.SCIENCE CHINA-INFORMATION SCIENCES. 2022.65.2. Wang, Haiyong; Mao, Wei; Zhao, Shenglei; He, Yuanhao; Chen, Jiabo; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
56. Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs.SCIENCE CHINA-INFORMATION SCIENCES. 2022.65.8. Wu, Yinhe; Zhang, Jincheng; Zhao, Shenglei; Wu, Zhaoxi; Wang, Zhongxu; Mei, Bo; Duan, Chao; Zhao, Dujun; Zhang, Weihang; Liu, Zhihong; Hao, Yue
57. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate.SCIENCE CHINA-INFORMATION SCIENCES. 2022.65.2. Zhao, Dujun; Wu, Zhaoxi; Duan, Chao; Mei, Bo; Li, Zhongyang; Wang, Zhongxu; Tang, Qing; Yang, Qing; Wu, Yinhe; Zhang, Weihang; Liu, Zhihong; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
58. Promising applications of wide bandgap inorganic perovskites in underwater photovoltaic cells.SOLAR ENERGY. 2022.233.(489-493). Liu, Chenbo; Dong, Hang; Zhang, Zeyang; Chai, Wenming; Li, Lindong; Chen, Dazheng; Zhu, Weidong; Xi, He; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
59. Telecom-Band Waveguide-Integrated MoS2 Photodetector Assisted by Hot Electrons.ACS PHOTONICS. 2022.9.1.(282-289). Li, Zhiwen; Hu, Siqi; Zhang, Qiao; Tian, Ruijuan; Gu, Linpeng; Zhu, Yisong; Yuan, Qingchen; Yi, Ruixuan; Li, Chen; Liu, Yan; Hao, Yue; Gan, Xuetao; Zhao, Jianlin
60. Design and fabrication of non-periodic 1-3 composite structure for ultrasonic transducer application.COMPOSITE STRUCTURES. 2022.285. Lin, Pengfei; Zhu, Yuanbo; Chen, Zhaobao; Fei, Chunlong; Chen, Dongdong; Zhang, Shuxiao; Li, Di; Feng, Wei; Yang, Yintang; Chai, Changchun
61. Nanolaminated HfO2/Al2O3 Dielectrics for High-Performance Silicon Nanomembrane Based Field-Effect Transistors on Biodegradable Substrates.ADVANCED MATERIALS INTERFACES. 2022.9.32. Liu, Chen; Wang, Zhuofan; Zhang, Yuming; Lu, Hongliang; Zhang, Yi-Men
62. Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al2O3 Interface Induced by Titanium Layer.ADVANCED MATERIALS INTERFACES. 2022 .9.4. Feng, Ze; Sun, Yong; Sun, Yuandong; Chen, Xiao; Shen, Yang; Huang, Rong; Li, Zhiyun; Wang, Hu; Ding, Ding; Peng, Yue; Wang, Yitong; Jing, Meiyi; Lu, Feng; Wang, Weihua; Cheng, Yahui; Cui, Yi; Dingsun, An; Han, Genquan; Liu, Hui; Dong, Hong
63. BiVO4 photoanode modification by synergic dual-conjugated organic materials.JOURNAL OF ALLOYS AND COMPOUNDS. 2022.918. Wang, Lin; Liu, Jie; Zhang, Hanzhi; Bu, Yuyu; Ao, Jin-Ping
64. Investigation of the surface optimization of beta-Ga2O3 films assisted deposition by pulsed MOCVD.SCRIPTA MATERIALIA. 2022.213. Zhang, Tao; Cheng, Qian; Li, Yifan; Hu, Zhiguo; Ma, Jinbang; Yao, Yixin; Zhang, Yuxuan; Zuo, Yan; Feng, Qian; Zhang, Yachao; Zhou, Hong; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
65. Zeolite framework silicon allotropes with direct band gap.ARABIAN JOURNAL OF CHEMISTRY. 2022.15.12. Song, Yanxing; Chai, Changchun; Fan, Qingyang; Zhang, Wei; Yang, Yintang
66. A 20 MHz Bandwidth 79 dB SNDR SAR-Assisted Noise-Shaping Pipeline ADC With Gain and Offset Calibrations.IEEE JOURNAL OF SOLID-STATE CIRCUITS. 2022.57.3.(745-756). Zhang, Yanbo; Zhang, Jin; Liu, Shubin; Ding, Ruixue; Zhu, Yan; Chan, Chi-Hang; Martins, Rui P.
67. Configurable Hybrid Energy Synchronous Extraction Interface With Serial Stack Resonance for Multi-Source Energy Harvesting.IEEE JOURNAL OF SOLID-STATE CIRCUITS. 2022. Wang, Xiudeng; Xia, Yinshui; Zhu, Zhangming; Shi, Ge; Xia, Huakang; Ye, Yidie; Chen, Zhidong; Qian, Libo; Liu, Lianxi
68. Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions.ISCIENCE. 2022.25.3. Yuan, Haidong; Su, Jie; Zhang, Siyu; Di, Jiayu; Lin, Zhenhua; Zhang, Jincheng; Zhang, Jie; Chang, Jingjing; Hao, Yue
69. A novel (B4Cp+Gd)/Al6061 neutron absorber material with desirable mechanical properties.MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. 2022.861. Chen, Mi; Liu, Zhiwei; Yang, Cuicui; Xiao, Peng; Yang, Weitao; Hu, Zhiliang; Sun, Liang; Jia, Yudong
70. Memory-Efficient Deformable Convolution Based Joint Denoising and Demosaicing for UHD Images.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY. 2022.32.11.(7346-7358). Guan, Juntao; Lai, Rui; Lu, Yang; Li, Yangang; Li, Huanan; Feng, Lichen; Yang, Yintang; Gu, Lin
71. The Image Identification Application with HfO2-Based Replaceable 1T1R Neural Networks.NANOMATERIALS. 2022.12.7. Lin, Jinfu; Liu, Hongxia; Wang, Shulong; Wang, Dong; Wu, Lei
72. Electro-Optical Modulation in High Q Metasurface Enhanced with Liquid Crystal Integration.NANOMATERIALS. 2022.12.18. Kanyang, Ruoying; Fang, Cizhe; Yang, Qiyu; Shao, Yao; Han, Genquan; Liu, Yan; Hao, Yue
73. Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit.NANOMATERIALS. 2022.12.23. Chen, Ruibo; Wei, Hao; Liu, Hongxia; Liu, Zhiwei; Chen, Yaolin
74. Influence of O-2 pulse on the beta-Ga2O3 films deposited by pulsed MOCVD.CERAMICS INTERNATIONAL. 2022.48.6.(8268-8275). Zhang, Tao; Li, Yifan; Cheng, Qian; Hu, Zhiguo; Ma, Jinbang; Yao, Yixin; Zuo, Yan; Feng, Qian; Zhang, Yachao; Zhou, Hong; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
75. Trace Al component in ?-(AlxGa1-x)(2)O-3 alloy films and film-based solar-blind photodetectors.CERAMICS INTERNATIONAL. 2022.48.15.(22031-22038). Gao, Yangyang; Tian, Xusheng; Feng, Qian; Lu, Xiaoli; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
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77. Effect of thickness scaling on the switching dynamics of ferroelectric HfO2-ZrO2 capacitors.CERAMICS INTERNATIONAL. 2022.48.19.(28489-28495). Peng, Yue; Wang, Zhe; Xiao, Wenwu; Ma, Yu; Liu, Fenning; Deng, Xinran; Yu, Xiao; Liu, Yan; Han, Genquan; Hao, Yue
78. Preparation and enhanced photocatalytic properties of the large-area transferred mesoporous InGaN-based MQWs with mesoporous GaN reflectors.COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS. 2022.654. Guan, Tongle; Cao, Dezhong; Xu, Yan; Wang, Bo; Lu, Dingze; Yan, Xiaodong; Sun, Kunxiao; Guo, Zhengquan; Wang, He; Shi, Xintong; Ma, Xiaohua
79. Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film.NANOSCALE RESEARCH LETTERS. 2022.17.1. Peng, Yue; Xiao, Wenwu; Zhang, Guoqing; Han, Genquan; Liu, Yan; Hao, Yue
80. M-O SiamRPN with Weight Adaptive Joint MIoU for UAV Visual Localization.REMOTE SENSING. 2022.14.18. Wen, Kailin; Chu, Jie; Chen, Jiayan; Chen, Yu; Cai, Jueping
81. Spatial and Transform Domain CNN for SAR Image Despeckling.IEEE GEOSCIENCE AND REMOTE SENSING LETTERS. 2022.19. Liu, Zesheng; Lai, Rui; Guan, Juntao
82. An Improved Indoor 3-D Ultrawideband Positioning Method by Particle Swarm Optimization Algorithm.IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. 2022.71. Yang, Yintang; Wang, Xianglong; Li, Di; Chen, Dongdong; Zhang, Qidong
83. Optimization of System Design and Calibration Algorithm for SPAD-Based LiDAR Imager.IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. 2022.71. Li, Dong; Ma, Rui; Wang, Xiayu; Hu, Jin; Zhu, Zhangming
84. Correlated Double Amplifying Readout Technique for Low-Noise Power-Efficient MEMS Capacitive Accelerometer.IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. 2022.71. Zhong, Longjie; Liu, Shubin; Xu, Donglai
85. Lightweight Channel Estimation Networks for OFDM Systems.IEEE WIRELESS COMMUNICATIONS LETTERS. 2022.11.10.(2066-2070). Li, Jinbao; Peng, Qi
86. A 14-b 20-MS/s 78.8 dB-SNDR Energy-Efficient SAR ADC With Background Mismatch Calibration and Noise-Reduction Techniques for Portable Medical Ultrasound Systems.IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS. 2022.16.2.(200-210). Liang, Yuhua; Li, Changying; Liu, Shubin; Zhu, Zhangming
87. A precise ultra-wideband ranging method using pre-corrected strategy and particle swarm optimization algorithm.MEASUREMENT. 2022.194. Li, Di; Wang, Xianglong; Chen, Dongdong; Zhang, Qidong; Yang, Yintang
88. Interfacial Dipole poly(2-ethyl-2-oxazoline) Modification Triggers Simultaneous Band Alignment and Passivation for Air-Stable Perovskite Solar Cells.POLYMERS. 2022.14.13. Xi, He; Song, Zhicheng; Guo, Yonggang; Zhu, Weijia; Ding, Lisong; Zhu, Weidong; Chen, Dazheng; Zhang, Chunfu
89. Stability Improvement of Perovskite Solar Cells by the Moisture-Resistant PMMA:Spiro-OMeTAD Hole Transport Layer.POLYMERS. 2022.14.2. Ma, Shaohua; Pang, Shangzheng; Dong, Hang; Xie, Xiaoping; Liu, Gang; Dong, Peng; Liu, Dawei; Zhu, Weidong; Xi, He; Chen, Dazheng; Zhang, Chunfu; Hao, Yue
90. Room-Temperature Anomalous Inverse Spin Hall Effect in an Easy-Plane Antiferromagnetic Insulator for Neel-Vector Manipulation and Detection. PHYSICAL REVIEW APPLIED. 2022.18.3. Hui, Yupeng; Zhang, Yueying; Wang, Yue-Qi; Gan, Xin; Wang, Lei; Liu, Shaoxuan; Zhang, Jincheng; Hao, Yue; Ma, Haijiao Harsan
91. High-Frequency Self-Focusing Ultrasonic Transducer With Piezoelectric Metamaterial.IEEE ELECTRON DEVICE LETTERS. 2022.43.6.(946-949). Li, Zhaoxi; Zhao, Jianxin; Hou, Chenxue; Fei, Chunlong; Zheng, Chenxi; Lou, Lifei; Chen, Dongdong; Li, Di; Yang, Yintang
92. A Back-Illuminated 4 mu m P+N-Well Single Photon Avalanche Diode Pixel Array With 0.36Hz/mu m(2) Dark Count Rate at 2.5 V Excess Bias Voltage.IEEE ELECTRON DEVICE LETTERS. 2022.43.9.(1519-1522). Sun, Wenbo; Wang, Yuxin; Liu, Maliang; Yang, Yintang
93. High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination.IEEE ELECTRON DEVICE LETTERS. 2022.43.2.(188-191). Lu, Hao; Hou, Bin; Yang, Ling; Zhang, Meng; Deng, Longge; Wu, Mei; Si, Zeyan; Huang, Sen; Ma, Xiaohua; Hao, Yue
94. Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation.IEEE ELECTRON DEVICE LETTERS. 2022.43.11.(1838-1841). Zhang, Fang; Zheng, Xuefeng; Zhang, Hao; Mi, Minhan; He, Yunlong; Du, Ming; Ma, Xiaohua; Hao, Yue
95. High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High I-ON/I-OFF and High Threshold Voltage.IEEE ELECTRON DEVICE LETTERS. 2022.43.5.(705-708). Du, Hanghai; Liu, Zhihong; Hao, Lu; Su, Huake; Zhang, Tao; Zhang, Weihang; Zhang, Jincheng; Hao, Yue
96. Self-Aligned and Low-Capacitance Lateral GaN Diode for X-Band High-Efficiency Rectifier.IEEE ELECTRON DEVICE LETTERS. 2022.43.4.(537-540). Dang, Kui; Zhan, Peng; Zhang, Jincheng; Zhou, Hong; Huo, Shudong; Zhang, Yanni; Zhang, Yachao; Ning, Jing; Xu, Shengrui; Hao, Yue
97. 6 kV/3.4 m Omega.cm(2) Vertical beta-Ga2O3 Schottky Barrier Diode With BV2/R-on,R-sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC.IEEE ELECTRON DEVICE LETTERS. 2022.43.5.(765-768). Dong, Pengfei; Zhang, Jincheng; Yan, Qinglong; Liu, Zhihong; Ma, Peijun; Zhou, Hong; Hao, Yue
98. 930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma.IEEE ELECTRON DEVICE LETTERS. 2022.43.9.(1400-1403). Jia, Fuchun; Ma, Xiaohua; Yang, Ling; Zhang, Xinchuang; Hou, Bin; Zhang, Meng; Wu, Mei; Niu, Xuerui; Du, Jiale; Liu, Siyu; Hao, Yue
99. New Strained Lateral MOSFET With Ultralow On-Resistance by Surrounded Stress Dielectric Layer.IEEE ELECTRON DEVICE LETTERS. 2022.43.4.(525-528). Li, Mingzhe; Duan, Baoxing; Yang, Yintang
100. Ferroelectric-Semiconductor Tunnel Junction With Ultrathin Semiconductor Electrode Engineering.IEEE ELECTRON DEVICE LETTERS. 2022.43.10.(1764-1767). Yan, Qinyuan; Zhou, Jiuren; Feng, Wenjing; Liu, Ning; Zheng, Siying; Jiao, Leming; Liang, Jie; Liu, Yan; Hao, Yue; Han, Genquan
101. A Large Gain and High Resolution Diamond Radiation Detector With Au/Hydrogen Termination Ohmic Contact.IEEE ELECTRON DEVICE LETTERS. 2022.43.3.(454-457). Su, Kai; Wang, Hanxue; He, Qi; Ren, Zeyang; Zhang, Jinfeng; Liu, Linyue; Zhang, Jincheng; Zhang, Yachao; Ouyang, Xiaoping; Bao, Weimin; Hao, Yue
102. Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment.IEEE ELECTRON DEVICE LETTERS. 2022.43.10.(1621-1624). Liu, Siyu; Zhu, Jiejie; Guo, Jingshu; Cheng, Kai; Mi, Minhan; Qin, Lingjie; Liu, Jielong; Jia, Fuchun; Lu, Hao; Ma, Xiaohua; Hao, Yue
103. Physical Unclonable Functions Based on Transient Form of Memristors for Emergency Defenses.IEEE ELECTRON DEVICE LETTERS. 2022.43.3.(378-381). Sun, Jing; Wang, Zhan; Wang, Saisai; Yang, Mei; Gao, Haixia; Wang, Hong; Ma, Xiaohua; Hao, Yue
104. Ultrahigh Response Humidity Sensor Based on Lead-Free Cs2SnCl6 Perovskite Films.IEEE ELECTRON DEVICE LETTERS. 2022.43.5.(805-808). Chang, Qijie; Wu, Daofu; Huang, Yanyi; Liang, Chengyao; Liu, Libo; Liu, Huanbin; Liu, Yan; Qiu, Jing; Tang, Xiaosheng; Han, Genquan
105. 1-HEMT-1-Memristor With Hardware Encryptor for Privacy-Preserving Image Processing.IEEE ELECTRON DEVICE LETTERS. 2022.43.8.(1223-1226). Dang, Bingjie; Lv, Ling; Wang, Hong; Cai, Lei; Yan, Bonan; Liu, Keqin; Xu, Liying; Hao, Yue; Huang, Ru; Yang, Yuchao
106. HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability.IEEE ELECTRON DEVICE LETTERS. 2022.43.2.(216-219). Peng, Yue; Xiao, Wenwu; Liu, Yan; Jin, Chengji; Deng, Xinran; Zhang, Yueyuan; Liu, Fenning; Zheng, Yunzhe; Cheng, Yan; Chen, Bing; Yu, Xiao; Hao, Yue; Han, Genquan
107. Optimized Backing Layers Design for High Frequency Broad Bandwidth Ultrasonic Transducer.IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING. 2022.69.1.(475-481). Hou, Chenxue; Fei, Chunlong; Li, Zhaoxi; Zhang, Shuxiao; Man, Jiujing; Chen, Dongdong; Wu, Runcong; Li, Di; Yang, Yintang; Feng, Wei
108. A novel 4H-SiC MESFET with P-type doping zone and recessed buffer layer.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2022.144. Jia, Hujun; Zhang, Yunfan; Zhu, Shunwei; Wang, Huan; Wang, Xiaoyu; Liang, Hua; Yang, Yintang
109. The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2022.143. Zhao, Ying; Xu, Shengrui; Feng, Lansheng; Peng, Ruoshi; Fan, Xiaomeng; Du, Jinjuan; Su, Huake; Zhang, Jincheng; Hao, Yue
110. High temperature and trap sates characterization of Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction.RESULTS IN PHYSICS. 2022.36. Zhao, Shenglei; Mei, Bo; Sun, Yi; Cao, Shuang; Zhang, Yachao; Zhu, Dan; Zhang, Jincheng; Hao, Yue
111. Transducer-Less Thermoreflectance Technique for Measuring Thermal Properties of the Buried Buffer Layer and Interface in GaN- based HEMTs.ACS APPLIED ELECTRONIC MATERIALS. 2022. Yuan, Chao; Meng, Biwei; Mao, Yali; Wu, Mei; Jia, Fuchun; Yang, Ling; Ma, Xiaohua; Hao, Yue
112. Carrier Dynamics for the Collective Resonant Tunneling in Quantum Dot-Based Artificial Graphene.ACS APPLIED ELECTRONIC MATERIALS. 2022. Chen, Peizong; Yan, Jia; Zhang, Ningning; Zhan, Yan; Huang, Qiang; Jiang, Zuimin; Zhong, Zhenyang
113. Lateral magnetic tunnel junctions with a heterointerface-induced half-metallic electrode.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS. 2022.167. Song, Yanxing; Chai, Changchun; Fan, Qingyang; Zhang, Wei; Yang, Yintang
114. A Type-II Dual-Path PLL With Reference-Spur Suppression.IEEE TRANSACTIONSON MICROWAVE THEORY AND TECHNIQUES. 2022.70.4.(2280-2289). Sun, Depeng; Ding, Ruixue; Bu, Feng; Lu, Shuai; Liang, Hongzhi; Zhou, Rong; Liu, Shubin; Zhu, Zhangming
115. A 12.3-18.5-GHz Single-Core Oscillator Using a Dual-Mode Variable Inductor With a Tunable Self-Resonant Frequency Technique.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 2022. Liang, Hongzhi; Liu, Shubin; Shen, Yi; Chang, Jun; Zhu, Zhangming
116. A 0.1-3.5-GHz Inductorless Noise-Canceling CMOS LNA With IIP3 Optimization Technique.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 2022.70.6.(3234-3243). Zhou, Rong; Liu, Shubin; Liu, Jiye; Liang, Yuhua; Zhu, Zhangming
117. An Inductive Power Transfer System for Powering Wireless Sensor Nodes in Structural Health Monitoring Applications.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 2022.70.7.(3732-3740). Qian, Libo; Cui, Kexue; Xia, Huakang; Shao, Hanru; Wang, Jian; Xia, Yinshui
118. High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 2022. Liu, Tao; Li, Yang; Yang, Jia-Yi; Wang, Ting-Ting; Wang, Xiao; Yang, Lin-An; Dickey, Michael; Ao, Jin-Ping; Hao, Yue
119. Simulation Study of Dual Metal-Gate Inverted T-Shaped TFET for Label-Free Biosensing.IEEE SENSORS JOURNAL. 2022.22.19.(18266-18272). Wang, Yunqi; Li, Cong; Li, Ouwen; Cheng, Shanlin; Liu, Weifeng; You, Hailong
120. A 0.3-V,-75.8-dBm Temperature-Robust Differential Wake-Up Receiver for WSNs.IEEE SENSORS JOURNAL. 2022.22.21.(20593-20602). Liu, Lianxi; Xie, Suzhen; Liao, Xufeng; Qin, Zhenghe; Wang, Jiabin
121. A Low Mismatch and High Input Impedance Multi-Channel Time-Division Multiplexing Analog Front End for Bio-Sensors.IEEE SENSORS JOURNAL. 2022.22.7.(6755-6763). Liu, Lianxi; Gao, Di; Tian, Yuyuan; Yu, Ying; Qin, Zhenghe
122. DTOF Image LiDAR With Stray Light Suppression and Equivalent Sampling Technology.IEEE SENSORS JOURNAL. 2022.22 3.(2358-2369). Li, Dong; Ma, Rui; Wang, Xiayu; Hu, Jin; Liu, Maliang; Zhu, Zhangming
123. Matching layer design of a 2-2 piezo-composite ultrasonic transducer for biomedical imaging.STRUCTURAL AND MULTIDISCIPLINARY OPTIMIZATION. 2022.65.3. Lin, Pengfei; Zhu, Yuanbo; Chen, Dongdong; Fei, Chunlong; Zheng, Chenxi; Chen, Zhaobao; Wu, Runcong; Li, Di; Zhang, Shuxiao; Feng, Wei; Jiang, Zhishui; Wen, Li; Chai, Changchun; Yang, Yintang
124. Localized surface plasmon and transferred electron enhanced UV emission of ZnO by periodical aluminum nanoparticle arrays.JOURNAL OF LUMINESCENCE. 2022.244. Ye, Qiong; Cao, Ruo-Yu; Wang, Xiao; Zhai, Xiao-Qi; Wang, Ting-Ting; Xu, Yang; He, Yue; Jia, Mao; Su, Xi; Bai, Li-Hua; Peng, Tao-Wei; Wu, Hao; Liu, Chang; Bu, Yu-Yu; Ma, Xiao-Hua; Hao, Yue; Ao, Jin-Ping
125. An Analog SiPM Based Receiver With On-Chip Wideband Amplifier Module for Direct ToF LiDAR Applications.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022. Wang, Xiayu; Liu, Yang; Hu, Jin; Li, Dong; Ma, Rui; Zhu, Zhangming
126. Trade-Off-Oriented Impedance Optimization of Chiplet-Based 2.5-D Integrated Circuits With a Hybrid MDP Algorithm for Noise Elimination.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022. Zhi, Changle; Dong, Gang; Wang, Yang; Zhu, Zhangming; Yang, Yintang
127. A 0.4 V, 6.4 nW,-75 dBm Sensitivity Fully Differential Wake-Up Receiver for WSNs Applications.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022.69.7.(2794-2804). Liao, Xufeng; Xie, Suzhen; Xu, Jiaxi; Liu, Lianxi
128. A Energy-Efficient SAR ADC With a Coarse-Fine Bypass Window Technique.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022. Shen, Yi; Liu, Jian; Han, Chenxi; Li, Angyang; Liu, Shubin; Ding, Ruixue; Zhu, Zhangming
129. A 50-ps Gated VCRO-Based TDC With Compact Phase Interpolators for Flash LiDAR.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022. Hu, Jin; Wang, Xiayu; Li, Dong; Liu, Yang; Ma, Rui; Zhu, Zhangming
130. A 16-Channel Analog CMOS SiPM With On-Chip Front-End for D-ToF LiDAR.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022.69.6.(2376-2386). Liu, Maliang; Liu, Bingzheng; Hu, Jin; Li, Dong; Ma, Jiaji; Chu, Zekun; Ma, Rui; Zhu, Zhangming
131. A Linear-Array Receiver AFE Circuit Embedded 8-to-1 Multiplexer for Direct ToF Imaging LiDAR Applications.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022. Zheng, Hao; Ma, Rui; Wang, Xiayu; Li, Dong; Hu, Jin; Liu, Yang; Zhu, Zhangming
132. A High Linearity TDC With a United-Reference Fractional Counter for LiDAR.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022.69.2.(564-572). Zhang, Wei; Ma, Rui; Wang, Xiayu; Zheng, Hao; Zhu, Zhangming
133. Voltage Control Ratiometric Readout Technique With Improved Dynamic Range and Power-Efficiency for Open-Loop MEMS Capacitive Accelerometer.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022. Zhong, Longjie; Liu, Shubin; Xu, Donglai; Zhu, Zhangming
134. A 10-bit 100-MS/s SAR ADC With Always-On Reference Ripple Cancellation.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2022.69.10.(3965-3975). Shen, Yi; Tang, Xiyuan; Xin, Xin; Liu, Shubin; Zhu, Zhangming; Sun, Nan
135. Mechanistic influence on uniformity of sheet resistance of AlGaN/GaN HEMT grown on Si substrate with the graded AlGaN buffer layers.VACUUM. 2022.199. Ma, Jinbang; Zhang, Yachao; Li, Yifan; Zhang, Tao; Yao, Yixin; Feng, Qian; Bi, Zhen; Zhang, Jincheng; Hao, Yue
136. Nanoporous AlGaN-based distributed Bragg reflectors with enhanced luminescence for wafer-scale ultraviolet light-emitting devices.VACUUM. 2022.204. Cao, Dezhong; Xu, Yan; Guan, Tongle; Wang, Bo; Yan, Xiaodong; Sun, Kunxiao; Zhang, Yunlong; Li, Lianbi; Ma, Xiaohua; Hao, Yue
137. Heterogrowth of beta-(AlxGa1-x)(2)O-3 Thin Films on Sapphire Substrates.CRYSTAL GROWTH & DESIGN. 2022.22.6.(3698-3707). Zhang, Tao; Cheng, Qian; Li, Yifan; Hu, Zhiguo; Zhang, Yuxuan; Ma, Jinbang; Yao, Yixin; Zuo, Yan; Feng, Qian; Zhang, Yachao; Zhou, Hong; Ning, Jing; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
138. A Review of UltraHigh Frequency Ultrasonic Transducers.FRONTIERS IN MATERIALS. 2022.8. Chen, Jun; Fei, Chunlong; Lin, Danmei; Gao, Pengkai; Zhang, Junshan; Quan, Yi; Chen, Dongdong; Li, Di; Yang, YinTang
139. Editorial: New Piezoelectric Materials and Devices: Fabrication, Structures, and Applications.FRONTIERS IN MATERIALS. 2022.8. Fei, Chunlong; Zhang, Lin; Chen, Zeyu; Yang, Yang; Ma, Jianguo
140. High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure.APPLIED PHYSICS LETTERS. 2022.120.6. Zhou, Yuwei; Mi, Minhan; Yang, Mei; Han, Yutong; Wang, Pengfei; Chen, Yilin; Liu, Jielong; Gong, Can; Lu, Yiwei; Zhang, Meng; Zhu, Qing; Ma, Xiaohua; Hao, Yue
141. AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade.APPLIED PHYSICS LETTERS. 2022.120.17. Lu, Hao; Yang, Ling; Hou, Bin; Zhang, Meng; Wu, Mei; Ma, Xiao-Hua; Hao, Yue
142. Ferroelectric domain modulated AlGaN/GaN field effect transistor.APPLIED PHYSICS LETTERS. 2022.120.3. Tang, Xiaowen; Lu, Xiaoli; Cong, ZheZhe; Shi, Zekun; Wang, Dangpo; Li, Jianing; Ma, Xiaohua; Hao, Yue
143. Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications.APPLIED PHYSICS LETTERS. 2022.121.7. Wang, Peng-Fei; Mi, Min-Han; Du, Xiang; Zhou, Yu-Wei; Liu, Jie-Long; Chen, Zhi-Hong; An, Si-Rui; Chen, Yi-Lin; Zhu, Jie-Jie; Zheng, Xue-Feng; Ma, Xiao-Hua; Hao, Yue
144. Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f(max).V-BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates.APPLIED PHYSICS LETTERS. 2022.120.10. Wang, Peng-Fei; Mi, Min-Han; Zhang, Meng; Zhu, Qing; Zhu, Jie-Jie; Zhou, Yu-Wei; Chen, Jun-Wen; Chen, Yi-Lin; Liu, Jie-Long; Yang, Ling; Hou, Bin; Ma, Xiao-Hua; Hao, Yue
145. Leakage current reduction in beta-Ga2O3 Schottky barrier diode with p-NiOx guard ring.APPLIED PHYSICS LETTERS. 2022.121.21. Hong, Yue-Hua; Zheng, Xue-Feng; He, Yun-Long; Zhang, Hao; Yuan, Zi-Jian; Zhang, Xiang-Yu; Zhang, Fang; Wang, Ying-Zhe; Lu, Xiao-Li; Mao, Wei; Ma, Xiao-Hua; Hao, Yue
146. Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with Co-60 gamma-irradiation.APPLIED PHYSICS LETTERS. 2022.120.20. Liu, Shuang; Zhang, Jincheng; Zhao, Shenglei; Shu, Lei; Song, Xiufeng; Wang, Chengjie; Li, Tongde; Liu, Zhihong; Hao, Yue
147. Charge transport behaviors in a multi-gated WSe2/MoS2 heterojunction.APPLIED PHYSICS LETTERS. 2022.121.4. Yang, Maolong; Lu, Yao; Zhang, Qiancui; Han, Zhao; Zhang, Yichi; Liu, Maliang; Zhang, Ningning; Hu, Huiyong; Wang, Liming
148. Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric.APPLIED PHYSICS LETTERS. 2022.120.4. Ren, Zeyang; Ding, Senchuan; Liang, Zhenfang; He, Qi; Su, Kai; Zhang, Jinfeng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
149. Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM.APPLIED PHYSICS LETTERS. 2022.120.20. Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang
150. The influence of device structure on resistance switching in PbS QDs film inserted RRAM.APPLIED PHYSICS LETTERS. 2022.121.3. Sun, Yuxin; Gao, Haixia; Wu, Shuliang; Duan, Yiwei; Qian, Mengyi; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang
151. In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device.APPLIED PHYSICS LETTERS. 2022.120.26. Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang
152. Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM.APPLIED PHYSICS LETTERS. 2022.121.7. Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang
153. Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations.APPLIED PHYSICS LETTERS. 2022.120.22. Su, Huake; Zhang, Tao; Xu, Shengrui; Lu, Juan; Du, Hanghai; Tao, Hongchang; Zhang, Jincheng; Hao, Yue
154. 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer.APPLIED PHYSICS LETTERS. 2022.120.5. Liu, Jie-Long; Zhu, Jie-Jie; Mi, Min-Han; Zhu, Qing; Liu, Si-Yu; Wang, Peng-Fei; Zhou, Yu-Wei; Zhao, Zi-Yue; Zhou, Jiu-Ding; Zhang, Meng; Wu, Mei; Hou, Bin; Wang, Hong; Yang, Ling; Ma, Xiao-Hua; Hao, Yue
155. Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection.APPLIED PHYSICS LETTERS. 2022.120.23. Zhang, Tao; Li, Ruohan; Zhang, Yanni; Su, Huake; Zhang, Weihang; Duan, Xiaoling; Zhang, Jincheng; Xu, Shengrui; Lv, Yueguang; Hao, Yue
156. Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV.APPLIED PHYSICS LETTERS. 2022.120.9. Zhang, Tao; Zhang, Yanni; Li, Ruohan; Lu, Juan; Su, Huake; Xu, Shengrui; Su, Kai; Duan, Xiaoling; Lv, Yueguang; Zhang, Jincheng; Hao, Yue
157. Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20nm PECVD-SiN.APPLIED PHYSICS LETTERS. 2022.120.12. Wu, Mei; Cheng, Ke; Yang, Ling; Hou, Bin; Zhang, Xin-Chuang; Wang, Ping; Zhang, Meng; Zhu, Qing; Zheng, Xue-Feng; Hu, Yan-Sheng; Ma, Xiao-Hua; Hao, Yue
158. Gate-tunable molybdenum disulfide/germanium heterostructure with ambipolar infrared photoresponse.APPLIED PHYSICS LETTERS. 2022.120.2. Yang, Maolong; You, Jie; Wang, Liming; Han, Zhao; Zhang, Yichi; Wang, Bo; Zhang, Ningning; Lin, Dongdong; Liu, Tao; Jiang, Zuimin; Hu, Huiyong
159. Improved electrical performance of lateral beta-Ga2O3 MOSFETs utilizing slanted fin channel structure.APPLIED PHYSICS LETTERS. 2022.121.20. Liu, Hongyu; Li, Jianing; Lv, Yuanjie; Wang, Yuangang; Lu, Xiaoli; Dun, Shaobo; Han, Tingting; Guo, Hongyu; Bu, Aimin; Ma, Xiaohua; Feng, Zhihong; Hao, Yue
160. Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination.APPLIED PHYSICS LETTERS. 2022.120.9. Yan, Qinglong; Gong, Hehe; Zhou, Hong; Zhang, Jincheng; Ye, Jiandong; Liu, Zhihong; Wang, Chenlu; Zheng, Xuefeng; Zhang, Rong; Hao, Yue
161. The role of surface pretreatment by low temperature O-2 gas annealing for beta-Ga2O3 Schottky barrier diodes.APPLIED PHYSICS LETTERS. 2022.120.7. Hu, Haodong; Feng, Ze; Wang, Yibo; Liu, Yan; Dong, Hong; Liu, Yue-Yang; Hao, Yue; Han, Genquan
162. Structural characters and band offset of Ga2O3-Sc2O3 alloys.APPLIED PHYSICS LETTERS. 2022.120.5. Zhu, Naxin; Wang, Bowen; Ma, Kaichuang; Xue, Xiangyi; Su, Jie
163. Highly transparent flexible artificial nociceptor based on forming-free ITO memristor.APPLIED PHYSICS LETTERS. 2022.120.9. Han, Xu; Xu, Yimeng; Sun, Bowen; Xu, Ruixue; Xu, Jing; Hong, Wang; Fu, Zhiwei; Zhu, He; Sun, Xin; Chang, Jingjing; Qian, Kai
164. Hysteresis-free and mu s-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/R-on,R-sp of 0.74/0.28 GW/cm(2).APPLIED PHYSICS LETTERS. 2022.120.11. Wang, Chenlu; Zhou, Hong; Zhang, Jincheng; Mu, Wenxiang; Wei, Jie; Jia, Zhitai; Zheng, Xuefeng; Luo, Xiaorong; Tao, Xutang; Hao, Yue
165. The accelerated design of the nanoantenna arrays by deep learning.NANOTECHNOLOGY. 2022.33.48. Ma, Lan; Wang, Shulong; Li, Yuhang; Wang, Guosheng; Duan, Xiaoling
166. Prediction of electrical properties of FDSOI devices based on deep learning.NANOTECHNOLOGY. 2022.33.33. Zhao, Rong; Wang, Shulong; Duan, Xiaoling; Liu, Chenyu; Ma, Lan; Chen, Shupeng; Liu, Hongxia
167. Single event effects prediction of MOSFET device using deep learning.NANOTECHNOLOGY. 2022.33.50. Zhao, Rong; Wang, Shulong; Duan, Xiaoling; Cao, Xianfa; Ma, Lan; Chen, Shupeng; Liu, Hongxia; Chen, Yanning; Zhang, Haifeng; Zhao, Yang
168. A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction.NANOTECHNOLOGY. 2022.33.22. Chen, Shupeng; Wang, Shulong; Liu, Hongxia; Han, Tao; Zhang, Hao
169. GaN/AlN Multi-Quantum Wells Infrared Detector with Short-Wave Infrared Response at Room Temperature.SENSORS. 2022.22.11. Jiang, Fengqiu; Bu, Yuyu
170. Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process.SENSORS. 2022.22.2. Zhao, Ranran; Zhang, Yuming; Lv, Hongliang; Wu, Yue
171. Influence of metal-semiconductor junction on the performances of mixed-dimensional MoS2/Ge heterostructure avalanche photodetector.OPTICS EXPRESS. 2022.30.12.(20250-20260). Yuan, Xixi; Zhang, Ningning; Zhang, Tianyao; Meng, Lingyao; Zhang, Junming; Shao, Jifang; Liu, Maliang; Hu, Huiyong; Wang, Liming
172. Enhanced prediction performance of a time-delay reservoir computing system based on a VCSEL by dual-training method.OPTICS EXPRESS. 2022.30.17.(30779-30790). Gu, Bi Ling; Xiang, Shui Ying; Guo, Xing Xing; Zheng, Dian Zhuang; Hao, Yue
173. Motion detection and direction recognition in a photonic spiking neural network consisting of VCSELs-SA.OPTICS EXPRESS. 2022.30.18.(31701-31713). Gao, Shuang; Xiang, Shui Ying; Song, Zi Wei; Han, Ya Nan; Zhang, Yu Na; Hao, Yue
174. Polarization properties in grating-gated AlN/GaN HEMTs at mid-infrared frequencies.OPTICS EXPRESS. 2022.30.9.(14748-14758). Cai, Ming; Liu, Hongxia; Wang, Shulong; Wang, Yindi; Wang, Dong; Zhao, Dongyan; Guo, Wei
175. Energy-efficient non-volatile ferroelectric based electrostatic doping multilevel optical readout memory.OPTICS EXPRESS. 2022.30.8.(13572-13582). Yao, Danyang; Li, Lei; Zhang, Yong; Peng, Yue; Zhou, Jiuren; Han, Genquan; Liu, Yan; Hao, Yue
176. Diamond inverter consisted of high mobility and low on-resistance enhancement-mode C-H diamond MISFET.DIAMOND AND RELATED MATERIALS. 2022.125. He, Qi; Ren, Zeyang; Xing, Yufei; Zhang, Jinfeng; Su, Kai; Zhang, Jincheng; Hao, Yue
177. Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment.MATERIALS. 2022.15.5. Fan, Jibin; Shi, Yimeng; Liu, Hongxia; Wang, Shulong; Luan, Lijun; Duan, Li; Zhang, Yan; Wei, Xing
178. Study on Black Phosphorus Characteristics Using a Two-Step Thinning Method.MATERIALS. 2022.15.2. Lu, Qin; Li, Xiaoyang; Chen, Haifeng; Jia, Yifan; Liu, Tengfei; Liu, Xiangtai; Wang, Shaoqing; Fu, Jiao; Chen, Daming; Zhang, Jincheng; Hao, Yue
179. A pi-Type Memristor Synapse and Neuron With Structural Plasticity.FRONTIERS IN PHYSICS. 2022.9. Su, Bowen; Cai, Jueping; Wang, Ziyang; Chu, Jie; Zhang, Yizhen
180. A 1V 3.5 mu W Bio-AFE With Chopper-Capacitor-Chopper Integrator-Based DSL and Low Power GM-C Filter.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.1.(5-9). Zhang, Tengfei; Li, Yani; Su, Chenglong; Zhang, Xiao; Yang, Yintang
181. Recent Advances and Trends in Voltage-Time Domain Hybrid ADCs.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.6.(2575-2580). Zhang, Yanbo; Zhu, Zhangming
182. A Power-Efficient TVC-Based Fast Auto-Frequency Calibration for PLLs.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.6.(2672-2676). Sun, Depeng; Ding, Ruixue; Bu, Feng; Liang, Hongzhi; Li, Dengquan; Liang, Yuhua; Liu, Shubin
183. A High Current-Efficiency Rail-to-Rail Class-AB Op-Amp With Dual-Loop Control.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.11.(4218-4222). Liu, Lianxi; Chen, Minglun; Huang, Wenbin; Liao, Xufeng; Xu, Jiaxi
184. A 11-Bit 1-GS/s 14.9mW Hybrid Voltage-Time Pipelined ADC With Gain Error Calibration.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.3.(799-803). Wei, Jiangbo; Zhang, Chenghao; Liu, Maliang
185. A 0.018 %/V Line Sensitivity Voltage Reference With-82.46 dB PSRR at 100 Hz for Bio-Potential Signals Readout Systems.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.4.(2031-2035). Wen, Kui; Shen, Yuke; Li, Yongyuan; Liu, Shubin
186. A 1.5-Cycle Fast Sampling P-SSHC Piezoelectric Energy Harvesting Interface.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.9.(3724-3728). Liu, Lianxi; Ma, Jian; Liao, Xufeng; Ou, Yuanwen; Xie, Yuhang; Zhu, Zhangming
187. A 625kHz-BW, 79.3dB-SNDR Second-Order Noise-Shaping SAR ADC Using High-Efficiency Error-Feedback Structure.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.3.(859-863). Yi, Pinyun; Liang, Yuhua; Liu, Shubin; Xu, Nuo; Fang, Liang; Hao, Yue
188. Implementation of High Precision Error Amplification Scheme for AC-DC Converter.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2022.69.3.(1522-1526). Wu, Qiang; Li, Xun; Li, Yongyuan; Di, Zhixiong; Feng, Quanyuan
189. Composite ultrasound transducer for multi-size of tweezer manipulation.APPLIED ACOUSTICS. 2022.198. Hou, Chenxue; Li, Zhaoxi; Fei, Chunlong; Zhao, Tianlong; Sun, Xinhao; Zhang, Junshan; Chen, Dongdong; Yang, Yintang
190. Investigation on the relationship between dislocation type and the annihilation mechanism of GaN-on-Si.MATERIALS LETTERS. 2022.311. Ma, Jinbang; Zhang, Yachao; Li, Yifan; Yao, Yixin; Zhang, Tao; Feng, Qian; Bi, Zhen; Feng, Lansheng; Zhang, Jincheng; Hao, Yue
191. Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer.OPTICS LETTERS. 2022.47.16 .(4139-4142). Peng, Ruoshi; Xu, Shengrui; Fan, Xiaomeng; Su, Huake; Tao, Hongchang; Gao, Yuan; Zhang, Jincheng; Hao, Yue
192. Deep Learning Based Channel Estimation for OFDM Systems With Doubly Selective Channel.IEEE COMMUNICATIONS LETTERS. 2022.26.9.(2067-2071). Peng, Qi; Li, Jinbao; Shi, Hao
193. A 2.5 V, 2.56 ppm/degrees C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications.MICROMACHINES. 2022.13.3. Zhu, Guangqian; Fu, Zhaoshu; Liu, Tingting; Zhang, Qidong; Yang, Yintang
194. A Survey on Analog-to-Digital Converter Integrated Circuits for Miniaturized High Resolution Ultrasonic Imaging System.MICROMACHINES. 2022.13.1. Chen, Dongdong; Cui, Xinhui; Zhang, Qidong; Li, Di; Cheng, Wenyang; Fei, Chunlong; Yang, Yintang
195. Architecture of Computing System based on Chiplet.MICROMACHINES. 2022.13.2. Shan, Guangbao; Zheng, Yanwen; Xing, Chaoyang; Chen, Dongdong; Li, Guoliang; Yang, Yintang
196. High-Performance and Flexible Design Scheme with ECC Protection in the Cache.MICROMACHINES. 2022.13.11. Zhou, Yulun; Liu, Hongxia; Xiang, Qi; Yin, Chenyu
197. Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices.MICROMACHINES. 2022.13.9. Yang, Jianye; Liu, Hongxia; Yang, Kun
198. Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects.MICROMACHINES. 2022.13.7. Xu, Baohui; Chen, Rongmei; Zhou, Jiuren; Liang, Jie
199. Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET.MICROMACHINES. 2022.13.5. Yang, Yafang; Liu, Hongxia; Yang, Kun; Gao, Zihou; Liu, Zixu
200. Hybrid Nanowire-Rectangular Plasmonic Waveguide for Subwavelength Confinement at 1550 Nm.MICROMACHINES. 2022.13.7. Wang, Yindi; Liu, Hongxia; Wang, Shulong; Cai, Ming
201. A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.MICROMACHINES. 2022.13.9. Ma, Boyang; Chen, Shupeng; Wang, Shulong; Han, Tao; Zhang, Hao; Yin, Chenyu; Chen, Yaolin; Liu, Hongxia
202. Polarization Gradient Effect of Negative Capacitance LTFET.MICROMACHINES. 2022.13.3. Zhang, Hao; Chen, Shupeng; Liu, Hongxia; Wang, Shulong; Wang, Dong; Fan, Xiaoyang; Chong, Chen; Yin, Chenyu; Gao, Tianzhi
203. Combined Effect of TID Radiation and Electrical Stress on NMOSFETs.MICROMACHINES. 2022.13.11. Cao, Yanrong; Wang, Min; Zheng, Xuefeng; Zhang, Enxia; Lv, Ling; Wang, Liang; Ma, Maodan; Lv, Hanghang; Wang, Zhiheng; Wang, Yongkun; Tian, Wenchao; Ma, Xiaohua; Hao, Yue
204. Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse.MICROMACHINES. 2022.13.8. Wang, Lei; Chai, Changchun; Zhao, Tianlong; Li, Fuxing; Qin, Yingshuo; Yang, Yintang
205. Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT.MICROMACHINES. 2022.13.1. Qin, Yingshuo; Chai, Changchun; Li, Fuxing; Liang, Qishuai; Wu, Han; Yang, Yintang
206. Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets.MICROMACHINES. 2022.13.6. Gao, Xiangxiang; Liu, Hai-Yang; Zhang, Jincheng; Zhu, Jian; Chang, Jingjing; Hao, Yue
207. FEM Simulation of a High-Performance 128 degrees Y-X LiNbO3/SiO2/Si Functional Substrate for Surface Acoustic Wave Gyroscopes.MICROMACHINES. 2022.13.2. Ma, Rui; Liu, Weiguo; Sun, Xueping; Zhou, Shun; Lin, Dabin
208. Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation.MICROMACHINES. 2022.13.4. Zhao, Dongyan; Wang, Yubo; Chen, Yanning; Shao, Jin; Fu, Zhen; Duan, Baoxing; Liu, Fang; Li, Xiuwei; Li, Tenghao; Yang, Xin; Li, Mingzhe; Yang, Yintang
209. Design, Fabrication, and Characterization of a Laser-Controlled Explosion-Initiating Device with Integrated Safe-and-Arm, EMP-Resistant, and Fast-Acting Technology Based on Photovoltaic Power Converter.MICROMACHINES. 2022.13.5. Yin, Guofu; Bao, Huiqin; Zhao, Yulong; Ren, Wei; Ji, Xiangfei; Cheng, Jianhua; Ren, Xi
210. Nb and Mn Co-Modified Na0.5Bi4.5Ti4O15 Bismuth-Layered Ceramics for High-Frequency Transducer Applications.MICROMACHINES. 2022.13.8. Fan, Dongming; Niu, Huiyan; Liu, Kun; Sun, Xinhao; Wang, Husheng; Shi, Kefei; Mo, Wen; Jian, Zhishui; Wen, Li; Shen, Meng; Zhao, Tianlong; Fei, Chunlong; Chen, Yong
211. Single-Beam Acoustic Tweezer Prepared by Lead-Free KNN-Based Textured Ceramics.MICROMACHINES. 2022.13.2. Quan, Yi; Fei, Chunlong; Ren, Wei; Wang, Lingyan; Zhao, Jinyan; Zhuang, Jian; Zhao, Tianlong; Li, Zhaoxi; Zheng, Chenxi; Sun, Xinhao; Zheng, Kun; Wang, Zhe; Ren, Matthew Xinhu; Niu, Gang; Zhang, Nan; Karaki, Tomoaki; Jiang, Zhishui; Wen, Li
212. An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs.IEEE ACCESS. 2022.10.(21759-21773). Ye, Ran; Cai, Xiaolong; Du, Chenglin; Liu, Haijun; Zhang, Yu; Duan, Xiangyang; Zhu, Jiejie
213. A state-of-art review on gallium oxide field-effect transistors.JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2022.55.38. Qiao, Rundi; Zhang, Hongpeng; Zhao, Shuting; Yuan, Lei; Jia, Renxu; Peng, Bo; Zhang, Yuming
214. A high-voltage GaN quasi-vertical metal-insulator-semiconductor Schottky barrier diode on Si with excellent temperature characteristics.JOURNALOF PHYSICS D-APPLIED PHYSICS. 2022.55.26. Song, Xiufeng; Sun, Baorui; Zhang, Jincheng; Zhao, Shenglei; Bian, Zhaoke; Liu, Shuang; Zhou, Hong; Liu, Zhihong; Hao, Yue
215. Investigation on the interface trap characteristics in a p-channel GaN MOSFET through temperature-dependent subthreshold slope analysis.JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2022.55.9. Chen, Jiabo; Liu, Zhihong; Wang, Haiyong; Zhu, Xiaoxiao; Zhu, Dan; Zhang, Tao; Duan, Xiaoling; Ning, Jing; Zhang, Jincheng; Hao, Yue
216. Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate.JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2022.55.42. Jia, Mao; Zhang, He-Nan; Wang, Xiao; Liu, Chen-Yang; Pu, Tao-Fei; Wang, Ting-Ting; He, Yue; Jiang, Feng-Qiu; Fang, Ke; Yang, Ling; Bu, Yu-Yu; Li, Yang; Ma, Xiao-Hua; Ao, Jin-Ping; Hao, Yue
217. Adjustable Acoustic Field Controlled by Ultrasonic Projector on Ultrasound Application.IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL. 2022.69.1.(254-260). Li, Zhaoxi; Yang, Shenghui; Fei, Chunlong; Guo, Rong; Chen, Dongdong; Zheng, Chenxi; Yang, Yintang
218. Echo Signal Receiving and Data Conversion Integrated Circuits for Portable High-Frequency Ultrasonic Imaging System.IEEE TRANSACTIONS ONULTRASONICS FERROELECTRICS AND FREQUENCYCONTROL. 2022.69.6.(1980-1993). Li, Di; Cheng, Wenyang; Cui, Xinhui; Chen, Dongdong; Fei, Chunlong; Yang, Yintang
219. Ultrawide Bandwidth High-Frequency Ultrasonic Transducers With Gradient Acoustic Impedance Matching Layer for Biomedical Imaging.IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL. 2022.69.6.(1952-1959). Zhao, Jianxin; Li, Zhaoxi; Fei, Chunlong; Hou, Chenxue; Wang, Danfeng; Lou, Lifei; Chen, Dongdong; Li, Di; Chen, Zeyu; Yang, Yintang
220. Effects of Composition Segregation in PMN-PT Crystals on Ultrasound Transducer Performance.IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL. 2022.69.2.(795-802). Jiang, Zibo; Hou, Chenxue; Fei, Chunlong; Li, Zhaoxi; Ye, Zuo-Guang
221. High-Frequency 0.36BiScO(3)-0.64PbTiO(3) Ultrasonic Transducer for High-Temperature Imaging Application.IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL. 2022.69.2.(761-768). Sun, Xinhao; Yang, Xiao; Zhao, Tian-Long; Fei, Chunlong; Zhu, Yuanbo; Quan, Yi; Zhang, Junshan; Li, Zhaoxi; Guo, Rong; Zhang, Shuxiao; Chen, Dongdong; Li, Di; Feng, Wei; Yang, Yintang; Xu, Zhuo
222. Single Event Burnout Hardening Technique for High-Voltage p-i-n Diodes With Field Limiting Rings Termination Structure.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.2.(675-681). Liao, Xinfang; Liu, Yi; Xu, Changqing; Li, Jing; Yang, Yintang
223. Simulation Study of Lateral Schottky Barrier IMPATT Diode Based on AlGaN/GaN 2-DEG for Terahertz Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(1006-1013). Zhang, Xiao-Yu; Yang, Lin-An; Hu, Xiao-Lin; Yang, Wen-Lu; Liu, Yu-Chen; Li, Yang; Ma, Xiao-Hua; Hao, Yue
224. Simulation Aided Hardening of Power Diodes to Prevent Single Event Burnout.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.9.(5088-5095). Liao, Xinfang; Yang, Yintang; Liu, Yi; Xu, Changqing
225. Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022. Chen, Junfei; Wu, Yong; Zhang, Jinfeng; Wang, Dong; Ren, Zeyang; Chen, Xing; Lei, Yingyi; Zhang, Jincheng; Hao, Yue
226. High Mobility Normally-OFF Hydrogenated Diamond Field Effect Transistors With BaF2 Gate Insulator Formed by Electron Beam Evaporator.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(1206-1210). He, Qi; Su, Kai; Zhang, Jinfeng; Ren, Zeyang; Xing, Yufei; Zhang, Jincheng; Lei, Yingyi; Hao, Yue
227. Investigation on Effect of Doped InP Subchannel Thickness and Delta-Doped InP Layer of Composite Channel HEMT.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(988- 993). Chen, Yao; Yang, Lin-An; Yue, Hang-Bo; Liu, Yu-Chen; Jin, Zhi; Su, Yong-Bo; Hao, Yue
228. Performance Improvement of a beta-Ga2O3-Based Solar-Blind Metal Oxide Semiconductor Field-Effect Phototransistor Using In Situ Ozone Pretreatment Technology.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(1143-1148). Li, Zhe; Feng, Zhaoqing; Xu, Yu; Feng, Qian; Zhu, Weidong; Chen, Dazheng; Zhou, Hong; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
229. Depletion-Mode beta-Ga2O3 MOSFETs Grown by Nonvacuum, Cost-Effective Mist-CVD Method on Fe-Doped GaN Substrates.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(1196-1199). Xu, Yu; Zhang, Chunfu; Yan, Pengru; Li, Zhe; Feng, Zhaoqing; Zhang, Yachao; Chen, Dazheng; Zhu, Weidong; Feng, Qian; Xu, Shengrui; Zhang, Jincheng; Hao, Yue
230. High-Performance GaN Vertical Schottky Barrier Diode With Self-Alignment Trench Structure.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.9.(5082-5087). Liu, Jiang; Han, Chuanyu; Yang, Mingchao; Liu, Weihua; Geng, Li; Hao, Yue
231. Single Crystalline Diamond p-Channel Cascode and Inverter.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.11.(6471-6475). Ding, Senchuan; Ren, Zeyang; Xing, Yufei; Zhang, Jinfeng; Ma, Yuanchen; Su, Kai; Li, Junpeng; Wang, Hanxue; Zhang, Jincheng; Hao, Yue
232. Complete Accumulation Lateral Double-Diffused MOSFET With Low ON-Resistance Applying Floating Buried Layer.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.2.(658- 663). Duan, Baoxing; Xing, Lantian; Wang, Yandong; Yang, Yintang
233. Understanding the Origin of Unreliable Low-Resistance State During Initialization Process.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.11.(6369-6375). Duan, Yiwei; Gao, Haixia; Sun, Yuxin; Wu, Shuliang; Qian, Mengyi; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang
234. A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.9.(5041-5047). Liu, Yang; Liu, Maliang; Ma, Rui; Hu, Jin; Li, Dong; Wang, Xiayu; Zhu, Zhangming
235. GaN High-Electron-Mobility-Transistor on Free-Standing GaN Substrate With Low Contact Resistance and State-of-the-Art f(T) x L-G Value.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(968-972). Du, Hanghai; Zhang, Jincheng; Zhou, Hong; Liu, Zhihong; Zhang, Tao; Dang, Kui; Zhang, Yanni; Zhang, Weihang; Zhang, Yachao; Hao, Yue
236. High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022. Zhou, Yuwei; Mi, Minhan; Han, Yutong; Wang, Pengfei; Chen, Yilin; Liu, Jielong; Gong, Can; Yang, Mei; Zhang, Meng; Zhu, Qing; Ma, Xiaohua; Hao, Yue
237. Effect of Graphite as Electrodes on Electrical and Photoelectrical Behavior of Multilayer MoS2 and WS2 FETs.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.9.(5324-5329). You, Jie; Zhang, Yichi; Yang, Maolong; Zhang, Ningning; Liu, Maliang; Zhu, Zhangming; Hu, Huiyong; Wang, Liming
238. Gate Voltage Dependence Ultrahigh Sensitivity WS2 Avalanche Field-Effect Transistor.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.6.(3225-3229). Meng, Lingyao; Zhang, Junming; Yuan, Xixi; Yang, Maolong; Wang, Bo; Wang, Liming; Zhang, Ningning; Liu, Maliang; Zhu, Zhangming; Hu, Huiyong
239. High-Performance beta-Ga2O3-Based Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor Under Zero Gate Bias.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.7.(3807-3810). Li, Zhe; Feng, Zhaoqing; Huang, Yuwen; Xu, Yu; Zhang, Zeyulin; Feng, Qian; Zhu, Weidong; Chen, Dazheng; Zhou, Hong; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
240. High-Performance AlGaN/GaN HEMTs With Hybrid Schottky-Ohmic Drain for Ka-Band Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.8.(4188-4193). Liu, Jielong; Mi, Minhan; Zhu, Jiejie; Wang, Pengfei; Zhou, Yuwei; Liu, Siyu; Zhu, Qing; Zhang, Meng; Hou, Bin; Wang, Hong; Yang, Ling; Ma, Xiaohua; Hao, Yue
241. Fully Physically Transient Volatile Memristor Based on Mg/Magnesium Oxide for Biodegradable Neuromorphic Electronics.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.6.(3118-3123). Cao, Yaxiong; Wang, Saisai; Lv, Jiaxing; Li, Fanfan; Liang, Qi; Yang, Mei; Ma, Xiaohua; Wang, Hong; Hao, Yue
242. Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low RON,sp.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(1200-1205). Duan, Baoxing; Yuan, Jiahui; Wang, Yandong; Yang, Luoyun; Yang, Yintang
243. The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.8.(4170-4174). Yang, Ling; Hou, Bin; Jia, Fuchun; Zhang, Meng; Wu, Mei; Niu, Xuerui; Lu, Hao; Shi, Chunzhou; Mi, Minhan; Zhu, Qing; Lu, Yang; Ma, Xiaohua; Hao, Yue
244. Accumulation-Mode Device: Experimental of LDMOS With Folded Drift Region Achieving Ultralow Specific ON Resistance.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.10.(5728-5732). Duan, Baoxing; Zhou, Ziyu; Wang, Yandong; Yang, Yintang
245. Analog Synapses Based on Nonvolatile FETs with Amorphous ZrO2 Dielectric for Spiking Neural Network Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(1028-1033). Liu, Huan; Li, Jing; Wang, Guosheng; Chen, Jiajia; Yu, Xiao; Liu, Yan; Jin, Chengji; Wang, Shulong; Hao, Yue; Han, Genquan
246. Influence of Fin-Like Configuration on Small-Signal Performance of AlGaN/GaN HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022. Zhao, Zi-Yue; Chen, Yi-Lin; Lu, Yang; Zhang, Heng-Shuang; Yi, Chu-Peng; Wang, Yu-Chen; Zhou, Jiu-Ding; Liu, Wen-Liang; Wang, Peng-Fei; Mi, Min-Han; Zhang, Meng; Ma, Xiao-Hua; Hao, Yue
247. Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al ₓGa ₁₋ₓN Channel.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.3.(973-980). Liu, Shuang; Zhang, Jincheng; Zhao, Shenglei; Shu, Lei; Song, Xiufeng; Qin, Xuexue; Wu, Yinhe; Zhang, Weihang; Li, Tongde; Wang, Liang; Liu, Zhihong; Zhao, Yuanfu; Hao, Yue
248. Analytical Model and Structure of the Multilayer Enhancement-Mode beta-Ga2O3 Planar MOSFETs.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.2.(682-689). Guo, Liangliang; Luan, Suzhen; Zhang, Hongpeng; Yuan, Lei; Zhang, Yuming; Jia, Renxu
249. Active Thermal Management of GaN-on-SiC HEMT With Embedded Microfluidic Cooling.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.10.(5470-5475). Ye, Yuxin; Wu, Mei; Kong, Yanmei; Liu, Ruiwen; Yang, Ling; Zheng, Xuefeng; Jiao, Binbin; Ma, Xiaohua; Bao, Weimin; Hao, Yue
250. Recessed-Gate Ga2O3-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm(2) Up to 200 degrees C.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.4.(1945-1949). Wang, Yibo; Han, Genquan; Xu, Wenhui; You, Tiangui; Hu, Haodong; Liu, Yan; Zhang, Xinchuang; Huang, Hao; Ou, Xin; Ma, Xiaohua; Hao, Yue
251. Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.11.(6023-6027). Lu, Hao; Hou, Bin; Yang, Ling; Song, Fang; Zhang, Meng; Wu, Mei; Ma, Xiaohua; Hao, Yue
252. A Fully Analytical Current Model for Gate-Source Overlap Tunneling FETs as the Ternary Devices.IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022.69.10.(5900-5905). Lyu, Zhijun; Lu, Hongliang; Liu, Chen; Zhang, Yuming; Zhang, Yimen; Zhu, Yi; Sun, Jiale; Lu, Bin; Jia, Ziji; Zhao, Mengqing
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