1. Robust Point Cloud Registration Using Geometric Spatial Refinement. IEEE ROBOTICS AND AUTOMATION LETTERS. 2023，8，7，4171-4178. Wang, Zhichao; Qi, Zhongdong; Peng, Qi; Wu, Zhijing; Zhu, Zhangming
2. An Analog SiPM Based Receiver With On-Chip Wideband Amplifier Module for Direct ToF LiDAR Applications. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，1，88-100. Wang, Xiayu; Liu, Yang; Hu, Jin; Li, Dong; Ma, Rui; Zhu, Zhangming
3. Intelligent Multifield Collaborative Optimization Method for TSV Array With Performance Constraints. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，9，4772-4778. Li, Guoliang; Shan, Guangbao; Meng, Baoping; Zheng, Yanwen; Yang, Yintang
4. An Improved MOS Self-Biased Ring Amplifier and Modified Auto-Zeroing Scheme. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. 2023，31，4，606-610. Chen, Kexu; Li, Di; Chen, Dongdong; Chai, Changchun
5. A Wide Dynamic Range Analog Front-End With Reconfigurable Transimpedance Amplifier for Direct ToF LiDAR. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2023，70，3，944-948. Wang, Xiayu; Ma, Rui; Li, Dong; Hu, Jin; Zhu, Zhangming
6. A Compact Bandwidth and Frequency-Range Reconfigurable CM Filter Using Varactor-Loaded Dual-Slot-Based Defected Ground Structure. IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY. 2023，65，3，725-737. Zeng, Zhibin; Bai, Lei
7. A 95 Efficiency Reusable Adaptive Time Control Bidirectional Buck Charge Converter for Wide Input Range Operation. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2023，70，1，16-20 . Li, Yani; Zhou, Huihui; Zheng, Yuhan; Zhou, Zhiyu; Yang, Yintang
8. A Novel Thermal-Aware Floorplanning and TSV Assignment With Game Theory for Fixed-Outline 3-D ICs. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. 2023，31，11，1639-1652. Guan, Wenbo; Tang, Xiaoyan; Lu, Hongliang; Zhang, Yuming; Zhang, Yimen
9. Miniaturization Strategy for Directional Couplers Based on Through-Silicon Via Insertion and Neuro-Transfer Function Modeling Method. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. 2023，31，11，1653-1664. Xiong, Wei; Dong, Gang; Zhi, Changle; Wang, Yang; Zhu, Zhangming; Yang, Yintang
10. A High-Efficiency Design Method of TSV Array for Thermal Management of 3-D Integrated System. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS. 2023，42，6，1733-1741. Wang, Xianglong; Yang, Yintang; Chen, Dongdong; Li, Di
11. Comparison Investigations on the Total Ionizing Dose Radiation of 4H-SiC MOS Structure Prepared With Different Nitrogen Annealing. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2023，70，11，2450-2455. Zhang, Yibo; Tang, Xiaoyan; Yuan, Hao; Liu, Yancong; Guo, Jingkai; Zhang, Zhiwen; Zhou, Yu; Du, Fengyu; Liu, Keyu; Yang, Haohang; Song, Qingwen; Zhang, Yuming
12. Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV.cm2/mg. IEEE ELECTRON DEVICE LETTERS. 2023，44，8，1252-1255. Yuan, Hao; Liu, Keyu; Liu, Yancong; Tang, Xiaoyan; Zhou, Yu; Du, Fengyu; Han, Chao; Zhang, Yibo; Lian, Pengfei; Zhang, Yimen; Zhang, Yuming; Song, Qingwen
13. Intelligent Design Method of Thermal Through Silicon via for Thermal Management of Chiplet-Based System. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，10，5273-5280. Wang, Xianglong; Yang, Yintang; Chen, Dongdong; Li, Di
14. Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature. IEEE TRANSACTIONS ON ELECTRON DEVICES . 2023，70，5，2342-2346. Sun, Chenyue; Guo, Hui; Yuan, Lei; Tang, Xiaoyan; Zhang, Yimeng; Song, Qingwen; Zhang, Yuming
15. A Energy-Efficient SAR ADC With a Coarse-Fine Bypass Window Technique. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，1，166-175. Shen, Yi; Liu, Jian; Han, Chenxi; Li, Angyang; Liu, Shubin; Ding, Ruixue; Zhu, Zhangming
16. An Ultrawideband Four-Port Composite Probe With Simultaneous Measurement of Multicomponent Fields and Improvement of Electric-Field Suppression. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. 2023，13，8，1278-1286. Wang, Lei; Liu, Xiaoxian; Shao, Weiheng; Zhu, Zhangming
17. An Ultra-Low Power TinyML System for Real-Time Visual Processing at Edge. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2023，70，7，2640-2644. Xu, Kunran; Zhang, Huawei; Li, Yishi; Zhang, Yuhao; Lai, Rui; Liu, Yi
18. Analytical Model for the Surrounded Field Plate in Folded Lateral MOSFET Structure. IEEE TRANSACTIONS ON ELECTRON DEVICES . 2023，70，7，3735-3742. Li, Mingzhe; Duan, Baoxing; Yang, Luoyun; Yang, Yintang.
19. An 8-bit 1.5-GS/s Two-Step SAR ADC With Embedded Interstage Gain. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. 2023，31，11，1870-1873. Shen, Yi; Hao, Junyan; Liu, Shubin; An, Zeshuai; Li, Dengquan; Ding, Ruixue; Zhu, Zhangming
20. Online Junction Temperature Estimation for SiC MOSFETs Using Drain Voltage Falling Edge Time. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，10，5228-5235. Wang, Ying; Jiang, Xi; Shi, Xinlong; Liu, Qifan; Zhang, Shijie; Ouyang, Runze; Jia, Daoyong; Ma, Nianlong; Gong, Xiaowu
21. Multiresolution Discriminative Mixup Network for Fine-Grained Visual Categorization. IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS. 2023，34，7，3488-3500. Xu, Kunran; Lai, Rui; Gu, Lin; Li, Yishi
22. Effect of Hydrogen on Electrical Performance of Pt/Au β-Ga2O3 (001) Schottky Barrier Diodes. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，5，2403-2407. Yue, Shaozhong; Zheng, Xuefeng; Hong, Yuehua; Zhang, Xiangyu; Zhang, Fang; Wang, Yingzhe; Lv, Ling; Cao, Yanrong; Ma, Xiaohua; Hao, Yue
23. A High-Precision Current-Mode Bandgap Reference With Low-Frequency Noise/Offset Elimination. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2023，70，11，3993-3997. Liao, Xufeng; Liu, Xincai; Wang, Yiyang; Liu, Lianxi.
24. Design of TID-Tolerant ADCs in Multivoltage Domain Based on Body Effect. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2023，70，10，2278-2284. Huang, Wei; Liu, Hongxia; Wang, Zhongyan
25. Investigation on Triggering Mode and Criterion of 4H-SiC Diode Avalanche Shaper. IEEE TRANSACTIONS ON ELECTRON DEVICES . 2023，70，8，4075-4080. Guo, Dengyao; Tang, Xiaoyan; Song, Qingwen; Zhou, Yu; Sun, Lejia; Yuan, Hao; Guo, Jingkai; Zhang, Yuming
26. High-Performance Photodetectors With Polarization Sensitivity Based on p-n and p-p+ Black Phosphorus/Germanium Heterojunctions. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，4，1739-1744. Yang, Maolong; Miao, Tian; Mi, Qing; Lu, Yao; Zhang, Ningning; Liu, Maliang; Guo, Hui; Liu, Tao; Hu, Huiyong; Wang, Liming
27. Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer. IEEE PHOTONICS JOURNAL. 2023，15，3. Tao, Hongchang; Xu, Shengrui; Cao, Yanrong; Su, Huake; Gao, Yuan; Zhang, Yachao; Zhang, Jincheng; Hao, Yue
28. Simulation of Pulse Sharpening Mechanism of Vertical Diamond Avalanche Diode. IEEE TRANSACTIONS ON ELECTRON DEVICES . 2023，70，4，1769-1775. Yang, Zhiqing; Cao, Yan; Zhang, Jinfeng; He, Qi; Su, Kai; Ren, Zeyang; Zhang, Jincheng; Li, Junpeng; Ma, Yuanchen; Wang, Dong; Wu, Yong; Hao, Yue
29. HfO2-Based Ferroelectric Optoelectronic Memcapacitors. IEEE ELECTRON DEVICE LETTERS. 2023，44，3，524-527. Liu, Ning; Zhou, Jiuren; Yao, Yupeng; Zheng, Siying; Feng, Wenjing; Cui, Mengkuo; Li, Bochang; Liu, Yan; Hao, Yue; Han, Genquan
30. A Modeling Study on Electrical and Thermal Behavior of CNT TSV for Multilayer Structure IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，9，4779-4785. Xu, Baohui; Chen, Rongmei; Zhou, Jiuren; Liang, Jie
31. A Simulation Study of Junctionless Forksheet on Sub-2 nm Node Logic Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES . 2023，70，7，3413-3418. Shi, Xinlong; Liu, Tao; Wang, Ying; Chen, Rui; Zhang, Ningning; Hu, Huiyong; Xu, Min; Wang, Liming
32. Impact of Application Characteristics on Laser Energy Fluctuation in Integrated Photonic Switching Systems. IEEE PHOTONICS JOURNAL. 2023，15，1. Wang, Kang; Gu, Huaxi; Yang, Yintang; Wang, Kun; Wang, Yue
33. High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application. IEEE ELECTRON DEVICE LETTERS. 2023，44，4，582-585. Yu, Qian; Shi, Chunzhou; Yang, Ling; Lu, Hao; Zhang, Meng; Wu, Mei; Hou, Bin; Jia, Fuchun; Guo, Fei; Ma, Xiaohua; Hao, Yue
34. A Novel AlGaN/GaN-Based Schottky Barrier Diode With Partial P-GaN Cap Layer and Semicircular T-Anode for Temperature Sensors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，10，5087-5091. Yan, Zhaoheng; Yuan, Song; Jiang, Xi; Deng, Chaofan; Pang, Zhenjiang; Bu, Xiaosong; Hong, Haimin; Gong, Xiaowu; Hao, Yue
35. Performance Improvement of MoS2-Based MOSFETs With Graphene Quantum Dots Pretreatment Technology. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，5，2581-2587. Yang, Kun; Liu, Hongxia; Wang, Shulong; Chong, Chen; Han, Tao
36. Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga2O3 Based Resistive Random Access Memory Device. IEEE ELECTRON DEVICE LETTERS. 2023，44，2，237-240. Cui, Dongsheng; Du, Yawei; Lin, Zhenhua; Kang, Mengyang; Wang, Yifei; Su, Jie; Zhang, Jincheng; Hao, Yue; Chang, Jingjing
37. Simulation of In-Situ Training in Spike Neural Network Based on Non-Ideal Memristors. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023，11，497-502. Ma, Lan; Wang, Guosheng; Wang, Shulong; Chen, Dongliang
38. A Simulation Study of SiGe Shell Channel CFET for Sub-2-nm Technology Nodes. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，3，908-913. Shi, Xinlong; Liu, Tao; Wang, Ying; Chen, Rui; Zhang, Ningning; Xu, Min; Wang, Liming; Hu, Huiyong
39. High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications. IEEE ELECTRON DEVICE LETTERS. 2023，44，6，911-914. Du, Hanghai; Liu, Zhihong; Hao, Lu; Xing, Weichuan; Zhou, Hong; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
40. Experimental Demonstration of Modulation Format Recognition Using Reservoir Computing Based on VCSEL With Gradient-Like Boosting. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 2023，29，6. Guo, Xing Xing; Xiang, Shui Ying; Zhang, Ya Hui; Gu, Bi Ling; Han, Yanan; Lin, Lin; Hao, Yue
41. Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field Modulation. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，2，429-434. Duan, Baoxing; Ma, Junchao; Yang, Luoyun; Wang, Yulong; Yang, Yintang
42. InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023，11，72-77. Gong, Can; Mi, Minhan; Zhou, Yuwei; Wang, Pengfei; Chen, Yilin; Liu, Jielong; Han, Yutong; An, Sirui; Guo, Siyin; Zhang, Meng; Zhu, Qing; Yang, Mei; Ma, Xiaohua; Hao, Yue
43. Physically Transient Threshold Switching Devices for Image Compression and Encryption Computing. IEEE ELECTRON DEVICE LETTERS. 2023，44，9，1575-1578. Wang, Saisai; Wang, Rui; Cao, Yaxiong; Sun, Jing; Ma, Xiaohua; Wang, Hong; Hao, Yue
44. Physically Transient Artificial Neuron Based on Mg/Magnesium Oxide Threshold Switching Memristor. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，4，2047-2051. Cao, Yaxiong; Wang, Saisai; Wang, Rui; Sun, Jing; Yang, Mei; Ma, Xiaohua; Wang, Hong; Hao, Yue
45. High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，5，2241-2246. Shi, Chunzhou; Yang, Ling; Zhang, Meng; Wu, Mei; Hou, Bin; Lu, Hao; Jia, Fuchun; Guo, Fei; Liu, Wenliang; Yu, Qian; Ma, Xiaohua; Hao, Yue
46. Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd=12 V. IEEE ELECTRON DEVICE LETTERS. 2023，44，4，590-593. Guo, Jingshu; Zhu, Jiejie; Liu, Siyu; Cheng, Kai; Zhu, Qing; Wang, Pengfei; Liu, Kai; Zhao, Ziyue; Qin, Lingjie; Zhou, Yuxi; Mi, Minhan; Hao, Yue; Ma, Xiaohua
47. Intelligent Codesign Strategy for Thermal Management and Cost Control of 3-D Integrated System With TTSV. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，10，5265-5272. Chen, Dongdong; Wang, Xianglong; Yang, Yintang; Li, Di; Li, Gaoliang
48. A 0.4-V Startup, Dead-Zone-Free, Monolithic Four-Mode Synchronous Buck-Boost Converter. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. 2023，31，7，1004-1013. Liu, Lianxi; Sun, Liuzhaoyu; Xu, Jiaxi; Zhang, Xiatian; Xu, Chengzhi; Liao, Xufeng
49. A Low-Noise and Low-Power Multi-Channel ECG AFE Based on Orthogonal Current-Reuse Amplifier. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，8，3167-3177. Tian, Yuyuan; Qin, Zhenghe; Yu, Ying; Gao, Di; Liao, Xufeng; Liu, Lianxi
50. High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，1，43-47. Zhou, Yuwei; Mi, Minhan; Han, Yutong; Wang, Pengfei; Chen, Yilin; Liu, Jielong; Gong, Can; Yang, Mei; Zhang, Meng; Zhu, Qing; Ma, Xiaohua; Hao, Yue
51. An Ultrawideband Differential Magnetic-Field Probe for Near-Field Scanning. IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS. 2023，33，2，224-227. Wang, Lei; En, Yunfei; Zhu, Zhangming
52. Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，2，424-428. Wu, Yinhe; Liu, Shuang; Zhang, Jincheng; Zhao, Shenglei; Li, Xiangdong; Zhang, Kai; Ai, Yue; Zhang, Weihang; Chen, Tangsheng; Hao, Yue
53. A Hybrid-Integrated Photonic Spiking Neural Network Framework Based on an MZI Array and VCSELs-SA . IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 2023，29，2. Song, Ziwei; Xiang, Shuiying; Zhao, Siting; Zhang, Yahui; Guo, Xingxing; Tian, Ye; Shi, Yuechun; Hao, Yue
54. DnRCNN: Deep Recurrent Convolutional Neural Network for HSI Destriping. IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS. 2023，34，7，3255-3268. Guan, Juntao; Lai, Rui; Li, Huanan; Yang, Yintang; Gu, Lin
55. Feasible Optimization and Fabrication of Multidimension Composites for High-Frequency Ultrasonic Transducer. IEEE SENSORS JOURNAL. 2023，23，15，16683-16690. Hou, Chenxue; Zhang, Juan; Li, Zhaoxi; Fei, Chunlong; Chen, Dongdong; Zhao, Tianlong; Quan, Yi; Wang, Yecheng; Jiang, Zhishui; Wen, Li; Yang, Yintang
56. Time-Dependent Degradation Mechanism of 1.2 kV SiC MOSFET Under Long-Term High-Temperature Gate Bias Stress. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，3，1162-1167. Shen, Yutong; He, Zhiyuan; Shi, Yijun; Niu, Hao; Chen, Yuan; Liu, Chang; Chen, Yiqiang; Cai, Zongqi; Lu, Guoguang; Dai, Xianying
57. Neuromorphic Speech Recognition With Photonic Convolutional Spiking Neural Networks. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 2023，29，6. Xiang, Shuiying; Zhang, Tianrui; Han, Yanan; Guo, Xingxing; Zhang, Yahui; Shi, Yuechun; Hao, Yue
58. A 63 μg/√Hz Noise Floor and 14 pJ Power Efficiency Open-Loop MEMS Capacitive Accelerometer Using Closed-Loop Hybrid Dynamic Amplifier. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，4，1531-1541. Zhong, Longjie; Liu, Shubin; Xu, Donglai; Zhu, Zhangming
59. Theoretical Investigation of Strain-Adjustable Ge0.92Sn0.08 Light-Emitting Diodes With Giant Magnetostrictive Stressor for Short-Wave Infrared Light Source. IEEE PHOTONICS JOURNAL. 2023，15，1. Zhang, Qingfang; Chen, Qianyu; Zhang, Jitao; Lu, Wenxiang; Zhang, Pei; Qin, Zirui; Cao, Lingzhi; Han, Genquan
60. High Linear and Temperature Insensitive GaAs Power Amplifier Operating at 3.3-3.6 GHz Using a Multi-Feedback Branch Bias Circuit. IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS. 2023，33，3，331-334. Liu, Wen-Liang; Yi, Chu-Peng; Zhang, Heng-Shuang; Wang, Yu-Chen; Zhou, Jiu-Ding; Shi, Chun-Zhou; Yang, Shao-Hua; Lu, Yang; Deng, Jing-Ya; Ma, Xiao-Hua; Hao, Yue
61. A New Method to Improve the Detection Sensitivity of Differential Magnetic-Field Probe for Near-Field Scanning. IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION. 2023，71，7，6225-6230. Wang, Lei; Liu, Xiaoxian; Lu, Guoguang; Zhu, Zhangming
62. Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2 Capacitors. IEEE TRANSACTIONS ON ELECTRON DEVICES . 2023，70，7，3788-3793. Zhang, Yueyuan; Peng, Yue; Liu, Fenning; Li, Kaixuan; Zhong, Ni; Liu, Yan; Hao, Yue; Han, Genquan
63. A Fully Symmetric High-Performance Transformer Balun Based on TSV for RF Applications. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. 2023，13，7，1074-1077. Wang, Fengjuan; Zhang, Dingxi; Yin, Xiangkun; Yu, Ningmei; Yang, Yuan
64. A Compact Sixth-Order Common-Mode Noise Suppression Filter Based on 3-D Integration Technology. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. 2023，13，4，502-510. Wang, Fengjuan; Hou, Cangcang; Yin, Xiangkun; Yu, Ningmei; Yang, Yuan
65. RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023，11，47-53. Liu, Chang; Liu, Hong Xia; Chen, Yi Qiang; Shi, Yi Jun; Xie, Yu Han; Chen, Si; Lai, Ping; He, Zhi Yuan; Huang, Yun
66. An Improved Constant Current Control Scheme for Multimode PSR Flyback Converter. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2023，70，9，3544-3548. Li, Yongyuan; Wu, Qiang; Guo, Wei; You, Yong; Qian, Libo; Zhu, Zhangming
67. An Elimination Scheme of Long and Short Periods for Flyback Converter. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2023，70，6，2052-2056. Li, Yongyuan; You, Yong; Han, Yueyun; Guo, Wei; Qian, Libo; Zhu, Guangqian; Wu, Qiang; Zhu, Zhangming
68. A Wideband and High-Gain Circularly Polarized Antenna Array for Radio-Frequency Energy Harvesting Applications. IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION. 2023，71，6，4874-4887. Sang, Jifei; Qian, Libo; Li, Minhua; Wang, Jian; Zhu, Zhangming
69. Voltage Bias Scheme Optimization in FeFET Based Neural Network System. IEEE ELECTRON DEVICE LETTERS. 2023，44，9，1464-1467. Zhao, Jiayi; Chen, Bing; Liu, Ning; Zhou, Jiuren; Cheng, Ran; Liu, Yan; Han, Genquan
70. A High Precision CV Control Scheme for Low Power AC-DC BUCK Converter Controller. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，10，4183-4193. Wu, Qiang; Wu, Linjun; Li, Yongyuan; Li, Xun; Di, Zhixiong; Liu, Shubin; Zhu, Zhangming
71. Printable ITO Transistors for DNA Computing in Cryptography. IEEE ELECTRON DEVICE LETTERS. 2023，44，10，1788-1791. Wang, Rui; Liang, Kun; Wang, Saisai; Cao, Yaxiong; Ma, Xiaohua; Zhu, Bowen; Wang, Hong; Hao, Yue
72. A Composite Probe Capable of Simultaneously Measuring Two Orthogonal Magnetic-Fields. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS. 2023，70，2，521-525. Wang, Lei; Liu, Xiaoxian; En, Yunfei; Zhu, Zhangming
73. Simultaneous Measurement of Electric and Magnetic Fields With a High-Sensitivity Differential Composite Probe. IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS. 2023，22，12，3092-3096. Wang, Lei; Liu, Xiaoxian; Lu, Guoguang; Zhu, Zhangming
74. A Simple Wideband Differential Magnetic Probe Loaded With Out-of-Phase Balun and Parasitic Loop. IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION. 2023，71，11，9107-9112. Wang, Lei; Liu, Xiaoxian; Wang, Hongyue; Zhu, Zhangming
75. A Broadband Multicomponent Magnetic Probe With Improved Electric-Field Suppression Performance. IEEE SENSORS JOURNAL. 2023，23，6，5920-5926. Wang, Lei; En, Yunfei; Zhu, Zhangming
76. An Adaptive Constant Voltage Control Scheme for Primary-Side Controlled Flyback Converter. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS. 2023，70，7，6776-6785. Li, Yongyuan; Wu, Qiang; Liu, Lianxi; Zhu, Zhangming
77. A 0.004-mm2 3.65-mW 7-Bit 2-GS/s Single-Channel GRO-Based Time-Domain ADC Incorporating Dead-Zone Elimination and On-Chip Folding-Offset Calibration in 28-nm CMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS. 2023，58，11，3179-3193. Zhang, Chenghao; Wei, Jiangbo; Chen, Yong; Liu, Maliang; Yang, Yintang
78. An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2023，23，4，530-536. Cheng, Lin; Lu, Hongliang; Yan, Silu; Qi, Junjun; Cheng, Wei; Zhang, Yuming; Zhang, Yimen
79. β-Ga2O3 Lateral Schottky Barrier Diodes With > 10 kV Breakdown Voltage and Anode Engineering. IEEE ELECTRON DEVICE LETTERS. 2023，44，10，1684-1687. Wang, Chenlu; Yan, Qinglong; Zhang, Chaoqun; Su, Chunxu; Zhang, Kun; Sun, Sihan; Liu, Zhihong; Zhang, Weihang; Alghamdi, Sami; Ghandourah, Emad; Zhang, Chunfu; Zhang, Jincheng; Zhou, Hong; Hao, Yue
80. A Multi-Bit CAM Design With Ultra-High Density and Energy Efficiency Based on FeFET NAND. IEEE ELECTRON DEVICE LETTERS. 2023，44，7，1104-1107. Jin, Chengji; Xu, Jiacheng; Zhao, Jiayi; Gu, Jiani; Chen, Jiajia; Liu, Huan; Qian, Haoji; Zhang, Miaomiao; Chen, Bing; Cheng, Ran; Liu, Yan; Yu, Xiao; Han, Genquan
81. A Miniaturized Wideband SIR Interdigital Bandpass Filter With High Performance Based on TSV Technology for W-Band Application. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY. 2023，13，6，906-909. Wang, Fengjuan; Zhang, Kai; Yin, Xiangkun; Yu, Ningmei; Yang, Yuan
82. High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer. IEEE PHOTONICS JOURNAL. 2023，15，2. Liu, Xu; Xu, Shengrui; Tao, Hongchang; Cao, Yanrong; Wang, Xinhao; Shan, Hengsheng; Zhang, Jincheng; Hao, Yue
83. Unique Bias Stress Instability of Heterogeneous Ga2O3-on-SiC MOSFET. IEEE ELECTRON DEVICE LETTERS. 2023，44，8，1256-1259. Liu, Chenyu; Wang, Yibo; Xu, Wenhui; Jia, Xiaole; Huang, Shuqi; Li, Yuewen; Li, Bochang; Luo, Zhengdong; Fang, Cizhe; Liu, Yan; You, Tiangui; Ou, Xin; Hao, Yue; Han, Genquan
84. A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2-ZrO2-HfO2 and ZrO2-HfO2-ZrO2 Superlattice Ferroelectric Films. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，4，1802-1807. Li, Kaixuan; Peng, Yue; Xiao, Wenwu; Liu, Fenning; Zhang, Yueyuan; Feng, Ze; Dong, Hong; Liu, Yan; Hao, Yue; Han, Genquan
85. MPPT Multiplexed Hybrid Energy Harvesting Interface With Adaptive Switching Cycle and Single-Cycle Sampling for Wearable Electronics. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，8，3187-3197. Liu, Lianxi; Yu, Ying; Liao, Xufeng; Yin, Jie; Ma, Jian; Wang, Xiudeng
86. Disturb-Free Operations of Multilevel Cell Ferroelectric FETs for Nand Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，4，1653-1658. Jin, Chengji; Xu, Jiacheng; Gu, Jiani; Zhao, Jiayi; Jia, Xiaole; Chen, Jiajia; Liu, Huan; Zhang, Miaomiao; Peng, Yue; Chen, Bing; Cheng, Ran; Liu, Yan; Yu, Xiao; Han, Genquan
87. New Resonant Probes With High Detection Sensitivity and Measurement Characteristic of Two Orthogonal Magnetic-Field Components. IEEE SENSORS JOURNAL. 2023，23，17，19476-19482. Wang, Lei; Liu, Xiaoxian; Lu, Guoguang; Zhu, Zhangming
88. Photoresponse Enhancement in Ge MSM Photodetector With Ge Micropillar Array. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，2，612-618. Zhang, Ningning; Shao, Jifang; Hao, Yuekai; Chen, Yu; Zhang, Zhifang; Zhang, Yichi; Gao, Liang; Miao, Tian; Zhong, Zhenyang; Hu, Huiyong; Wang, Liming
89. Detection Properties of Ge MSM Photodetector Enhanced by Au Nanoparticles. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，10，5288-5293. Zhang, Ningning; Hao, Yuekai; Shao, Jifang; Chen, Yu; Yan, Jia; Zhang, Yichi; Wang, Bo; You, Jie; Gao, Liang; Zhong, Zhenyang; Miao, Tian; Hu, Huiyong; Wang, Liming
90. Load-Mismatch Tracking Digital Predistortion Technique for Mobile-Terminal Power Amplifiers. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 2023，71，1，158-172. Liu, Xin; Chen, Wenhua; Chen, Wenhao; Guo, Yan; Feng, Zhenghe
91. Controlling the Ferroelectricity of Doped-HfO2 via Reversible Migration of Oxygen Vacancy. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，4，1789-1794. Chen, Jiajia; Xu, Jiacheng; Gong, Zhi; Gu, Jiani; Yu, Xiao; Jin, Chengji; Peng, Yue; Liu, Yan; Chen, Bing; Cheng, Ran; Han, Genquan
92. Configurable Hybrid Energy Synchronous Extraction Interface With Serial Stack Resonance for Multi-Source Energy Harvesting. IEEE JOURNAL OF SOLID-STATE CIRCUITS. 2023，58，2，451-461. Wang, Xiudeng; Xia, Yinshui; Zhu, Zhangming; Shi, Ge; Xia, Huakang; Ye, Yidie; Chen, Zhidong; Qian, Libo; Liu, Lianxi
93. A Quantum Corrected Compact Model of Experimentally Fabricated GAA 2-D MBCFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，3，891-898. Liu, Yunlin; Huang, Xiaohe; Luo, Kun; Wu, Zhenhua; Liu, Yan; Liu, Chunsen; Hu, Guangxi; Zhou, Peng; Lu, Ye
94. Trap Behavior of the Optical Power Fluctuation in AlGaN-Based UV-C LEDs Degradation. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，2，570-575. Su, Mengwei; Liu, Hongxia; Cai, Ming; Sun, Wenhong
95. Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，4，1566-1573. Chen, Ruibo; Liu, Hongxia; Yan, Cong; Du, Feibo; Han, Aoran; Zhang, Yuxin; Huang, Wei; Xiang, Qi; Gao, Tianzhi; Wei, Hao; Liu, Zhiwei
96. Analytic Distribution Design for Irregular Repetition Slotted ALOHA With Multi-Packet Reception. IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY. 2023，72，1，1360-1365. Chen, Zhengchuan; Feng, Yifan; Feng, Chundie; Liang, Liang; Jia, Yunjian; Quek, Tony Q. S.
97. A Clockless Synergistic Hybrid Energy Harvesting Technique With Simultaneous Energy Injection and Sampling for Piezoelectric and Photovoltaic Energy. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，4，1795-1804. Wang, Xiudeng; Xia, Yinshui; Shi, Ge; Zhu, Zhangming; Xia, Huakang; Ye, Yidie; Chen, Zhidong; Qian, Libo; Liu, Lianxi
98. Dual Entropy-Controlled Convolutional Neural Network for Mini/Micro LED Defect Recognition. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. 2023，72. Wang, Yuxiang; Chu, Jie; Chen, Yu; Liang, Dong; Wen, Kailin; Cai, Jueping
99. MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，4，1860-1864. He, Yue; Chen, Ke-Yue; Wang, Ting-Ting; Jia, Mao; Bai, Li-Hua; Wang, Xiao; Bu, Yu-Yu; Ao, Jin-Ping
100. Degradation of β-Ga2O3 Vertical Ni/Au Schottky Diodes Under Forward Bias. IEEE ELECTRON DEVICE LETTERS. 2023，44，5，725-728. Sun, Rujun; Balog, Andrew R. R.; Yang, Haobo; Alem, Nasim; Scarpulla, Michael A. A.
101.Analysis and Design of Broadband Balance-Compensated Transformer Baluns for Silicon-Based Millimeter-Wave Circuits. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023, 70，8，3103-3116. Li, Shuyang; Xia, Bowen; Li, Xingcun; Wang, Yunfan; Liu, Xin; Chen, Wenhua
102.Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023，11. Qu, Zhenyu; Xu, Wenhui; You, Tiangui; Shen, Zhenghao; Zhao, Tiancheng; Huang, Kai; Yi, Ailun; Zhang, David Wei; Han, Genquan; Ou, Xin; Hao, Yue
103.A 40-GHz Load Modulated Balanced Power Amplifier Using Unequal Power Splitter and Phase Compensation Network in 45-nm SOI CMOS. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，8，3178-3186. Chen, Lang; Chen, Lisheng; Ge, Zeyu; Sun, Yichuang; Zhu, Xi
104.Demonstration of the β-Ga2O3 MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing. IEEE ELECTRON DEVICE LETTERS. 2023，44，3，380-383. Wang, Chenlu; Yan, Qinglong; Su, Chunxu; Alghamdi, Sami; Ghandourah, Emad; Liu, Zhihong; Feng, Xin; Zhang, Weihang; Dang, Kui; Wang, Yingmin; Wang, Jian; Zhang, Jincheng; Zhou, Hong; Hao, Yue
105.Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (24 kA/cm2) Stress. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，3，959-962. Zhao, Shenglei; Zhang, Jincheng; Feng, Qi; Du, Lin; Zhang, Weiwei; Ji, Siwei; Song, Xiufeng; Wu, Feng; Zhang, Weihang; Bian, Zhaoke; Liu, Zhihong; Hao, Yue
106.A Half-Tangent Phase-Locked Loop for Variable-Frequency Grids of the More Electric Aircraft. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS. 2023，70，2，1576-1585. Li, Guangqi; Dai, Zhiyong; Wu, Bingxuan; Yang, Yongheng; Huang, Jin; Lam, Chi-Seng
107.Influences of Orientation and Remote O2 Plasma Exposure on the Interface Properties of SiO2/β-Ga2O3 MOS Capacitors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，3，1188-1193. Sun, Rujun; Bhattacharyya, Arkka; Saleh, Muad; Krishnamoorthy, Sriram; Scarpulla, Michael A. A.
108.HfO2 -ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，7，3979-3982. Peng, Yue; Xiao, Wenwu; Liu, Fenning; Jin, Chengji; Cheng, Yan; Wang, Luhua; Zhang, Yueyuan; Yu, Xiao; Liu, Yan; Hao, Yue; Han, Genquan
109.Reconfigurable Intelligent Surface-Assisted Secondary Communication System Coexisting With Multiple Primary Networks. IEEE TRANSACTIONS ON COGNITIVE COMMUNICATIONS AND NETWORKING. 2023，9，1，170-184. Tian, Zhong; Chen, Zhengchuan; Wang, Min; Jia, Yunjian; Wen, Wanli; Jin, Shi
110.Joint Optimization of Freshness and Fidelity for Status Updates in a Periodical Decision SystemIEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY. 2023，72，3，3569-3583. Hu, Limei; Chen, Zhengchuan; Deng, Dapeng; Wang, Min; Jia, Yunjian; Quek, Tony Q. S.
111.Multihop Clustering Routing Protocol Based on Improved Coronavirus Herd Immunity Optimizer and Q-Learning in WSNs. IEEE SENSORS JOURNAL. 2023，23，2，1645-1659. Yao, Yin-Di; Wang, Chen; Li, Xiong; Zeng, Zhi-Bin; Zhao, Bo-Zhan; Su, Zhan; Li, Hui-Cong
112.A Power-Efficient 13-Tap FIR Filter and an IIR Filter Embedded in a 10-Bit SAR ADC. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. 2023，70，6，2293-2305. Xin, Xin; Shen, Linxiao; Tang, Xiyuan; Shen, Yi; Cai, Jueping; Tong, Xingyuan; Sun, Nan
113.A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023，70，3，877-882. Sun, Jiale; Zhang, Yuming; Lu, Hongliang; Lyu, Zhijun; Lu, Bin; Zhu, Yi; Dai, Shige; Pan, Yuche
114.High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 2023，71，2，898-906. Liu, Tao; Li, Yang; Yang, Jia-Yi; Wang, Ting-Ting; Wang, Xiao; Yang, Lin-An; Dickey, Michael; Ao, Jin-Ping; Hao, Yue
115.Ergodic Rate of Reconfigurable Intelligent Surface-Assisted Multigroup Multicast System. IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY. 2023，72，4，5485-5490. Chen, Zhengchuan; Chen, Li; Tian, Zhong; Wang, Min; Jia, Yunjian; Dai, Linglong
116.Improving the Timeliness of Two-Source Status Update Systems in Internet of Vehicles With Source-Dedicated Buffer: Resource Allocation. IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY. 2023，72，7，9337-9350. Chen, Zhengchuan; Zeng, Qisi; Chen, Shutong; Li, Mingyan; Wang, Min; Jia, Yunjian; Quek, Tony Q. S.
117.Pulsed X-Ray Detector Based on an Unintentionally-Doped High Resistivity ε-Ga2O3 Film. IEEE PHOTONICS TECHNOLOGY LETTERS. 2023，35，2，89-92. Wang, Jing; Zhou, Leidang; Lu, Xing; Chen, Liang; Chen, Zimin; Zou, Xinbo; Wang, Gang; Yang, Boming; Ouyang, Xiaoping
118.Optimal Hovering Height and Power Allocation for UAV-Aided NOMA Covert Communication SystemIEEE WIRELESS COMMUNICATIONS LETTERS. 2023，12，6，937-941. Su, Yi; Fu, Shu; Si, Jiangbo; Xiang, Chaocan; Zhang, Ning; Li, Xue
119.Age of Information in UAV Aided Wireless Sensor Networks Relying on Blockchain. IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY. 2023，72，9，12430-12435. Feng, Houze; Wang, Jingjing; Fang, Zhengru; Qian, Junhui; Chen, Kwang-Cheng
120.Practical Issue Analyses and Imaging Approach for Hypersonic Vehicle-Borne SAR With Near-Vertical Diving Trajectory. IEEE TRANSACTIONS ON GEOSCIENCE AND REMOTE SENSING. 2023，61. Tang, Shiyang; Zhang, Xintian; He, Zixuan; Chen, Zhanye; Du, Wangwang; Li, Yinan; Zhang, Juan; Guo, Ping; Zhang, Linrang; So, Hing Cheung
121.Towards Energy-Efficient Data Collection by Unmanned Aerial Vehicle Base Station With NOMA for Emergency Communications in IoT. IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY. 2023，72，1，1211-1223. Fu, Shu; Guo, Xiaohui; Fang, Fang; Ding, Zhiguo; Zhang, Ning; Wang, Ning
122.Discrete multi-step phase hologram for high frequency acoustic modulation. CHINESE PHYSICS B. 2023，33，1. Zhou, Meng-Qing; Li, Zhao-Xi; Li, Yi; Wang, Ye-Cheng; Zhang, Juan; Chen, Dong-Dong; Quan, Yi; Yang, Yin-Tang; Fei, Chun-Long
123.Research on self-supporting T-shaped gate structure of GaN-based HEMT devices. CHINESE PHYSICS B. 2023，32，6. Zhang, Peng; Li, Miao; Chen, Jun-Wen; Liu, Jia-Zhi; Ma, Xiao-Hua
124.Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes. CHINESE PHYSICS B. 2023，32，8. Zhang, Tao; Li, Ruo-Han; Su, Kai; Su, Hua-Ke; Lv, Yue-Guang; Xu, Sheng-Rui; Zhang, Jin-Cheng; Hao, Yue
125.Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications. CHINESE PHYSICS B. 2023，32，12. Zhou, Yuwei; Mi, Minhan; Wang, Pengfei; Gong, Can; Chen, Yilin; Chen, Zhihong; Liu, Jielong; Yang, Mei; Zhang, Meng; Zhu, Qing; Ma, Xiaohua; Hao, Yue
126.Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer. CHINESE PHYSICS B. 2023，32，10. Niu, Xuerui; Hou, Bin; Zhang, Meng; Yang, Ling; Wu, Mei; Zhang, Xinchuang; Jia, Fuchun; Wang, Chong; Ma, Xiaohua; Hao, Yue
127.SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current. CHINESE PHYSICS B. 2023，32，4. Duan, Baoxing; Luo, Kaishun; Yang, Yintang
128.Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process. CHINESE PHYSICS B. 2023，32，3. Guo, Jingshu; Zhu, Jiejie; Liu, Siyu; Liu, Jielong; Xu, Jiahao; Chen, Weiwei; Zhou, Yuwei; Zhao, Xu; Mi, Minhan; Yang, Mei; Ma, Xiaohua; Hao, Yue
129.MoS2/Si tunnel diodes based on comprehensive transfer technique. CHINESE PHYSICS B. 2023，32，1. Zhu, Yi; Lv, Hongliang; Zhang, Yuming; Jia, Ziji; Sun, Jiale; Lyu, Zhijun; Lu, Bin
130.High on-state current p-type tunnel effect transistor based on doping modulation. CHINESE PHYSICS B. 2023，32，7. Sun, Jiale; Zhang, Yuming; Lu, Hongliang; Lyu, Zhijun; Zhu, Yi; Pan, Yuche; Lu, Bin
131.Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor. CHINESE PHYSICS B. 2023，32，3. Cheng, Meixia; Luan, Suzhen; Wang, Hailin; Jia, Renxu
132.Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz. CHINESE PHYSICS B. 2023，32，11. Liu, Si-Yu; Zhu, Jie-Jie; Guo, Jing-Shu; Cheng, Kai; Mi, Min-Han; Qin, Ling-Jie; Zhang, Bo-Wen; Tang, Min; Ma, Xiao-Hua
133.Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress. APPLIED PHYSICS LETTERS. 2023，122，9. Wang, Xiaohu; Zheng, Xuefeng; Wang, Baocai; Wang, Yingzhe; Yue, Shaozhong; Zhu, Tian; Mao, Wei; Zhang, Hao; Ma, Xiaohua; Hao, Yue
134.Effect of gamma irradiation on β-Ga2O3 vertical Schottky barrier diode. APPLIED PHYSICS LETTERS. 2023，123，21. Liu, Minwei; Hua, Mingzhuo; Tian, Xusheng; Wang, Zhengxing; Gao, Huhu; Wang, Wentao; Chen, Yiqiang; Zhang, Chunfu; Zhao, Shenglei; Feng, Qian; Hao, Yue
135.Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity. APPLIED PHYSICS LETTERS. 2023，122，11. Yang, Yintang; Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Guo, Jingshu; Yang, Mei; Ma, Xiaohua
136.Deep reservoir computing based on self-rectifying memristor synapse for time series prediction. APPLIED PHYSICS LETTERS. 2023，123，4. Wang, Rui; Liang, Qi; Wang, Saisai; Cao, Yaxiong; Ma, Xiaohua; Wang, Hong; Hao, Yue
137.Ferroelectric passivation layer derived high performance AlGaN/GaN heterojunction field-effect transistor. APPLIED PHYSICS LETTERS. 2023，123，21. Cong, Zhezhe; Lu, Xiaoli; He, Yunlong; Cai, Mingshuang; Wang, Xu; Wang, Ye; Ma, Xiaohua; Hao, Yue
138.Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures. APPLIED PHYSICS LETTERS. 2023，123，13. Su, Huake; Zhang, Tao; Xu, Shengrui; Tao, Hongchang; Yun, Boxiang; Zhang, Jincheng; Hao, Yue
139.Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM. APPLIED PHYSICS LETTERS. 2023，123，3. Qian, Mengyi; Gao, Haixia; Duan, Yiwei; Guo, Jingshu; Bai, Yifan; Zhu, Shilong; Ma, Xiaohua; Yang, Yintang
140.Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon. APPLIED PHYSICS LETTERS. 2023，122，14. Wang, Yingzhe; Zheng, Xuefeng; Zhu, Tian; Yue, Shaozhong; Pan, Ailing; Xu, Shengrui; Li, Peixian; Ma, Xiaohua; Zhang, Jincheng; Guo, Lixin; Hao, Yue
141.Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment. APPLIED PHYSICS LETTERS. 2023，122，16. He, Yun-Long; Sheng, Bai-Song; Hong, Yue-Hua; Liu, Peng; Lu, Xiao-Li; Zhang, Fang; Wang, Xi-Chen; Li, Yuan; Zheng, Xue-Feng; Ma, Xiao-Hua; Hao, Yue
142.Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity. APPLIED PHYSICS LETTERS. 2023，123，20. Yao, Yixin; Zhang, Yachao; Zhu, Jiaduo; Dang, Kui; Su, Chunxu; Ma, Jinbang; Chen, Kai; Wang, Baiqi; Liu, Wenjun; Xu, Shengrui; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue
143.Visible-infrared dual-band detection with a polarization sensitivity based on GeSe/Ge heterojunction field effect transistor. APPLIED PHYSICS LETTERS. 2023，123，2. Lu, Yao; Wang, Bo; Yang, Maolong; Zhang, Qiancui; Jiang, Zuimin; Miao, Tian; Zhang, Ningning; Zhang, Jincheng; Guo, Hui; Hu, Huiyong; Wang, Liming
144.Transient form of polyvinyl alcohol-based devices with configurable resistive switching behavior for security neuromorphic computing. APPLIED PHYSICS LETTERS. 2023，122，17. Sun, Jing; Wang, Zhan; Wang, Saisai; Cao, Yaxiong; Gao, Haixia; Wang, Hong; Ma, Xiaohua; Hao, Yue
145.A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation. APPLIED PHYSICS LETTERS. 2023，122，18. Zhu, Tian; Zheng, Xue-Feng; Yin, Tai-Xu; Zhang, Hao; Wang, Xiao-Hu; Yue, Shao-Zhong; Wang, Tan; Han, Tao; Ma, Xiao-Hua; Hao, Yue
146.Demonstration of the normally off β-Ga2O3 MOSFET with high threshold voltage and high current density. APPLIED PHYSICS LETTERS. 2023，123，19. Cai, Yuncong; Feng, Zhaoqing; Wang, Zhengxing; Song, Xiufeng; Hu, Zhuangzhuang; Tian, Xusheng; Zhang, Chunfu; Liu, Zhihong; Feng, Qian; Zhou, Hong; Zhang, Jincheng; Hao, Yue
147.Enhancing emission in a QD-nanodisk system via the alignment of the orientation of excitons with the polarization of Mie modes. APPLIED PHYSICS LETTERS. 2023，122，26. Zhang, Ningning; Hao, Yuekai; Yao, Youyuan; Gao, Liang; Miao, Tian; Hu, Huiyong; Wang, Liming; Zhong, Zhenyang
148.High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier. APPLIED PHYSICS LETTERS. 2023，122，14. Zhang, Yachao; Dong, Yaolong; Chen, Kai; Dang, Kui; Yao, Yixin; Wang, Baiqi; Ma, Jinbang; Liu, Wenjun; Wang, Xing; Zhang, Jincheng; Hao, Yue
149.Memristors with tunable characteristics based on the tellurene/Nb-doped MoS2 heterojunction toward bio-realistic synaptic emulation. APPLIED PHYSICS LETTERS. 2023，123，17. Zeng, Xiangyu; Zhang, Liang; Peng, Jiaqi; Ye, Qikai; Ma, Boyang; Xu, Hongsheng; Liu, Yulu; Shuaibu, Nazifi Sani; Wang, Xiaozhi; Wang, Yixiu; Liu, Yan; Hao, Yue; Han, Genquan
150.Alpha particle detection based on a NiO/β-Ga2O3 heterojunction diode. APPLIED PHYSICS LETTERS. 2023，123，16. Zhou, Leidang; Chen, Hao; Deng, Yuxin; Zhang, Silong; Chen, Liang; Lu, Xing; Ouyang, Xiaoping
151.Printable Epsilon-Type Structure Transistor Arrays with Highly Reliable Physical Unclonable Functions. ADVANCED MATERIALS. 2023，35，16. Wang, Rui; Liang, Kun; Wang, Saisai; Cao, Yaxiong; Xin, Yuhan; Peng, Yaqian; Ma, Xiaohua; Zhu, Bowen; Wang, Hong; Hao, Yue
152.Engineering Sub-Nanometer Hafnia-Based Ferroelectrics to Break the Scaling Relation for High-Efficiency Piezocatalytic Water Splitting. ADVANCED MATERIALS. 2023，35，42. Su, Ran; Zhang, Jiahui; Wong, Vienna; Zhang, Dawei; Yang, Yong; Luo, Zheng-Dong; Wang, Xiaojing; Wen, Hui; Liu, Yang; Seidel, Jan; Yang, Xiaolong; Pan, Ying; Li, Fa-tang
153.Recent progress and development of radio frequency energy harvesting devices and circuits. NANO ENERGY. 2,023,117. Chen, Dongdong; Li, Ruoyu; Xu, Jianqiang; Li, Di; Fei, Chunlong; Yang, Yintang
154.Low-voltage and high-gain WSe2 avalanche phototransistor with an out-of-plane WSe2/WS2 heterojunction. NANO RESEARCH. 2023，16，2. Meng, Lingyao; Zhang, Ningning; Yang, Maolong; Yuan, Xixi; Liu, Maliang; Hu, Huiyong; Wang, Liming
155.Simulating the obstacle avoidance behavior day and night based on the visible-infrared MoS2/Ge heterojunction field-effect phototransistor. NANO RESEARCH. 2023，16，8. Han, Zhao; Wang, Bo; You, Jie; Zhang, Qiancui; Zhang, Yichi; Miao, Tian; Zhang, Ningning; Lin, Dongdong; Jiang, Zuimin; Jia, Renxu; Zhang, Jincheng; Guo, Hui; Hu, Huiyong; Wang, Liming
156.Simulating tactile and visual multisensory behaviour in humans based on an MoS2 field effect transistor. NANO RESEARCH. 2023，16，5. You, Jie; Wang, Liming; Zhang, Yichi; Lin, Dongdong; Wang, Bo; Han, Zhao; Zhang, Ningning; Miao, Tian; Liu, Maliang; Jiang, Zuimin; Guo, Hui; Zhang, Yimeng; Zhang, Jincheng; Hu, Huiyong
157.Van der Waals Nonlinear Photodetector with Quadratic Photoresponse. NANO LETTERS. 2023，23，3. Chen, Xiaoqing; Zhang, Yu; Tian, Ruijuan; Wu, Xianghu; Luo, Zhengdong; Liu, Yan; Wang, Xinran; Zhao, Jianlin; Gan, Xuetao
158.A Reconfigurable 8-to-10-bit 20-to-5-GS/s time-interleaved time-domain ADC. MICROELECTRONICS JOURNAL. 2023,138. Wei, Jiangbo; Zhang, Chenghao; Wang, Xinyu; Chang, Yuan; Liu, Maliang
159.A 6 to 18 GHz flat high gain power amplifier using mismatch-consistent MCR technique in 40-nm CMOS. MICROELECTRONICS JOURNAL. 2023,143. Wang, Hang; Li, Zhenrong; Duan, Shize; Wu, Yanhui; Dong, Dawei
160.LMS-based digital background mismatch calibration technique for SAR ADC. MICROELECTRONICS JOURNAL. 2023,136. Wan, Jing; Song, Shida; Liang, Yuhua
161.A novel inverted T-shaped negative capacitance TFET for label-free biosensing application. MICROELECTRONICS JOURNAL. 2023,139. Luo, Di; Li, Cong; Wang, Yun-qi; Li, Ou-wen; Kuang, Feng-yu; You, Hai-long
162.Filtering SIW phase shifter based on through quartz vias technology. MICROELECTRONICS JOURNAL. 2023,136. Liu, Nuo; Liu, Xiaoxian; Fan, Chenhui
163.A Ka-band fourth-order SIW filter power divider with wide out-of-band suppression. MICROELECTRONICS JOURNAL. 2023,133. Fan, Chenhui; Liu, Xiaoxian; Liu, Nuo; Yang, Yintang
164.A novel high-performance trench lateral double-diffused MOSFET with buried oxide bump layer. MICROELECTRONICS JOURNAL. 2023,139. Jia, Hujun; Shen, Yangyi; Wang, Huan; Wang, Xiaojie; Zhang, Yunfan; Zhu, Shunwei; Yang, Yintang
165.Scalable modeling of grounded coplanar waveguide for MMICs design using neural network with an effective sampling strategy. MICROELECTRONICS JOURNAL. 2023,131. Hu, Yanghui; Zhang, Yuming; Lu, Hongliang; Tan, Daidao; Qi, Junjun
166.A 99.93% energy-efficient switching scheme for SAR ADC without switching energy in the first three MSBs. MICROELECTRONICS JOURNAL. 2023,136. Yu, Zhe; Liang, Yuhua
167.An energy-efficient switching scheme based on a splitting structure. MICROELECTRONICS JOURNAL. 2023,131. Cao, Junta; Liang, Yuhua
168.A configurable area-efficient LCoS chip design with centrosymmetric pixel array. MICROELECTRONICS JOURNAL. 2023,131. Zhao, Tianhu; Liang, Yuhua; Feng, Lichen
169.Machine learning based prediction model for single event burnout hardening design of power MOSFETs. MICROELECTRONICS JOURNAL. 2023,139. Liao, Xinfang; Xu, Changqing; Liu, Yi; Wang, Chen; Chen, Dongdong; Yang, Yintang
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