›› 2010, Vol. 23 ›› Issue (3): 50-.

• 论文 • 上一篇    下一篇

光电耦合器电离辐射损伤噪声相关性模型

林丽艳1,杜磊1,包军林2,何亮1   

  1. (1beoplay体育提现大学 技术物理学院,陕西 西安710071; 2beoplay体育提现大学 微电子学院,陕西 西安710071)
  • 出版日期:2010-03-15 发布日期:2010-05-12
  • 通讯作者: 林丽艳(1984-),女,硕士研究生。研究方向:材料科学。
  • 作者简介:林丽艳(1984-),女,硕士研究生。研究方向:材料科学。

A Model for Ionizing Radiation Damage Correlating with Noise in Optoelectronic Coupled Devices

Lin Liyan1,Du Lei1,Bao Junlin2,He Liang1   

  1. (1School of Technical Physics,Xidian University,Xian  710071,China; 2School of Microelectronics,Xidian University,Xian  710071,China)
  • Online:2010-03-15 Published:2010-05-12

摘要:

在总结光电耦合器噪声产生机制的基础上,建立光电耦合器电离辐射损伤1/f噪声相关性模型,并通过辐照实验验证了模型的正确性。该模型全面分析了光电耦合器的电离辐射损伤,为噪声参量用于光电耦合器电离辐射损伤表征提供了理论依据。

关键词: 噪声, 光电耦合器, 模型

Abstract:

Defects generated by ionizing radiation damage in optoelectronic coupled devices(OCDs) is the origin of noise.Based on a summary of the noise mechanism in OCDs,a model of ionizing radiation damage correlating with 1/f noise in OCDs has been established.The experimental results agree well with the proposed model.The model analyzes the mechanism and provides the noise representation theory for ionizing radiation damage in OCDs.

Key words: noise;OCDs;model

中图分类号: 

  • TN632