一种阳极连接P型埋层的AlGaN/GaN肖特基二极管

doi:10.16180/j.cnki.issn1007-7820.2020.01.010

电子科技 ›› 2020, Vol. 33 ›› Issue (1): 51-56.doi: 10.16180/j.cnki.issn1007-7820.2020.01.010

一种阳极连接P型埋层的AlGaN/GaN肖特基二极管

孙友磊,唐健翔,王颖,黄意飞,王文举

杭州电子科技大学电子信息学院,浙江杭州 310018

收稿日期:2018-12-25 出版日期:2020-01-15 发布日期:2020-03-12
作者简介:孙友磊(1991-),男,硕士研究生。研究方向:宽禁带功率半导体器件。|唐健翔(1994-),男,硕士研究生。研究方向:宽禁带功率半导体器件。|王颖(1977-),男,博士,教授,博士生导师。研究方向:功率半导体器件及其可靠性、微纳电子器件辐射效应与加固技术、微传感器及接口电路。
基金资助:
浙江省杰出青年基金(LR17F040001)

A AlGaN/GaN Schottky Diode with Anode Connected P-type Buried Layer

SUN Youlei,TANG Jianxiang,WANG Ying,HUANG Yifei,WANG Wenju

School of Electronics and Information,Hangzhou Dianzi University,Hangzhou 310018,China

Received:2018-12-25 Online:2020-01-15 Published:2020-03-12
Supported by:
The Excellent Youth Foundation of Zhejiang Province of China(LR17F040001)

摘要/Abstract

摘要：

在传统AlGaN/GaN肖特基二极管中,阳极漏电始终是制约器件耐压提高的一个重要因素。因此文中研究了在缓冲层中生长P型埋层并与阳极相连的AlGaN/GaN肖特基二极管结构 AC-PBL FPs SBD来抑制阳极的泄漏电流。同时,在二极管的两级均加上场板来调制该器件的表面电场分布。经过仿真验证可知,该结构的阳极关断泄漏电流得到了有效抑制,同时辅助耗尽沟道内的2DEG,扩大空间电荷区,进而提高了器件的耐压特性。该结构的击穿电压为733 V,与传统GET SBD器件相比,击穿电压提高了近3.4倍,Baliga优值提升了近11.6倍,说明该器件可以应用在电力电子线路中。

关键词: AlGaN/GaN, 埋层, 击穿电压, 优值, 场板, 导通电阻

Abstract:

In the traditional AlGaN/GaN Schottky diodes, the anode leakage is an important factor that limits the enhancement of the breakdown voltage of the device.Therefore,aAlGaN/GaN Schottky diode structure with a P-type buried layer grown in the buffer layer and connected to the anode (AC-PBL FPs SBD) was investigated to suppress the anode leakage current. Meanwhile, field plates were added to both anode and cathode to modulate the surface electric field distribution of the device. The simulation proved that the anode leakage current of the structure was effectively suppressed, and the 2DEG in the channel was depleted. The space charge region was enlarged, and the breakdown voltage of the device was improved. The breakdown voltage of this structure was 733 V. Compared with the traditional GET SBD device, the breakdown voltage was increased by nearly 3.4 times, and the Baliga value was improved by nearly 11.6 times, indicating that the device could be applied in power electronic circuits.

Key words: AlGaN/GaN, buriedlayer, breakdownvoltage, figure of merit, fieldplate, on-resistance

中图分类号:

TN312+.3

孙友磊,唐健翔,王颖,黄意飞,王文举. 一种阳极连接P型埋层的AlGaN/GaN肖特基二极管[J]. 电子科技, 2020, 33(1): 51-56.

SUN Youlei,TANG Jianxiang,WANG Ying,HUANG Yifei,WANG Wenju. A AlGaN/GaN Schottky Diode with Anode Connected P-type Buried Layer[J]. Electronic Science and Technology, 2020, 33(1): 51-56.

图/表 10

图1

表1

图2

图3

图4

图5

图6

图7

图8

图9

参考文献 16

[1]	Ha M W, Lee S C, Choi Y H , et al. New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure[J]. Superlattices & Microstructures, 2006,40(4):567-573.
[2]	Chang T F, Huang C F, Yang T Y , et al. Low turn-on voltage dual metal AlGaN/GaN Schottky barrier diode[J]. Solid-State Electronics, 2015,10(5):12-15.
[3]	Hu J, Stoffels S, Zhao M , et al. Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottkydiodes under HTRB tests[J]. IEEE Electron Device Letters, 2017,38(3):371-374.
[4]	Ma J, Matioli E . High-voltage and low-leakage AlGaN/GaN tri-anode Schottkydiodes with integrated tri-gate transistors[J]. IEEE Electron Device Letters, 2017,38(1):83-86.
[5]	Tsou C W, Wei K P, Lian Y W , et al. 2.07-kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga’sfigure-of-merit[J]. IEEE Electron Device Letters, 2015,37(1):70-73.
[6]	Bahat Treidel E, Hilt O, Zhytnytska R , et al. Fast-switching GaN-based lateral power schottky barrier diodes with low onset voltage and strong reverse blocking[J]. IEEE Electron Device Letters, 2012,33(3):357-359.
[7]	Lian Y W, Lin Y S, Yang J M , et al. AlGaN/GaN Schottkybarrier diodes on silicon substrates with selective si diffusion for low onset voltage and high reverse blocking[J]. IEEE Electron Device Letters, 2013,34(8):981-983.
[8]	Zhou C, Chen W, Piner E , et al. AlGaN/GaN dual-channel lateral field-effect rectifier with punchthrough breakdown immunity and low on-resistance[J]. IEEE Electron Device Letters, 2010,31(1):5-7.
[9]	Bahat Treidel E, Brunner F, Hilt O , et al. AlGaN/GaN/GaN:Cback-barrier HFETs with breakdown voltage of over 1 kV and low RON×A[J]. IEEE Transactions on Electron Devices, 2010,57(11):3050-3058.
[10]	Luo X, Wang Y, Cao F , et al. Abreakdownenhanced AlGaN/GaN MISFET with source connected P-buried layer[J]. Superlattices and Microstructures, 2017,112(8):517-527.
[11]	Gao J, Wang M, Yin R , et al. Schottky-MOS hybrid anode AlGaN/GaN lateral field-effect rectifier with low onset voltage and improved breakdown voltage[J]. IEEE Electron Device Letters, 2017,38(10):1425-1428.
[12]	Hu J, Stoffels S, Lenci S , et al. Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN schottky diodes with gated edge termination[J]. IEEE Transactions on Electron Devices, 2016,63(9):3451-3458.
[13]	Tang C, Xie G, Zhang L , et al. Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes[J]. Chinese Physics B, 2013,22(10):106107-106118.
[14]	Wang Y, Li Z Y, Hao Y , et al. Evaluation by simulation of AlGaN/GaN Schottky Barrier Diode (SBD) with anode-via vertical field plate structure[J]. IEEE Transactions on Electron Devices, 2018,65(6):2552-2557.
[15]	Hua M, Zhang Z, Wei J , et al. Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime[C]. San Francisco:International Electron Devices Meeting (IEDM), 2016.
[16]	Hayashi K, Ohta H, Nakamura T, et al. Junction-barrier Schottky diodes fabricated with very thin highly Mg-doped p+-GaN (20 nm)/n-GaN layers grown on GaN substrates[C]. Kansai:International Meeting for Future of Electron Devices, 2017.

参数	值
阳极长度 (L_A)	0.2 μm
栅终端长度 (L_GE)	0.45 μm
阴极长度 (L_C)	0.1 μm
漂移区距离 (L_AC)	5 μm
势垒层厚度(T_bar)	25 nm
沟道层厚度 (T_chan)	50 nm
底层缓冲层厚度 (T_bot)	1.6 μm
中间缓冲层厚度 (T_mid)	0.4 μm
阴极场板长度 (L_cfp)	0.5 μm
阳极场板长度 (L_afp)	0.83 μm
P型埋层的厚度(T_P)	0.1μm
P型埋层的长度(L_d)	1~3 μm
P型埋层到沟道距离(T_s)	0.05~0.3 μm

一种阳极连接P型埋层的AlGaN/GaN肖特基二极管

A AlGaN/GaN Schottky Diode with Anode Connected P-type Buried Layer

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

图/表 10

参考文献 16

相关文章 6

Metrics

本文评价

推荐阅读 8

[1]	刘熙,叶星宁. 漏压对P-GaN HEMT导通电阻和阈值电压的影响[J]. 电子科技, 2021, 34(6): 56-60.
[2]	张飞,林茂,毛鸿凯,苏芳文,隋金池. 一种具有N埋层的AlGaN/GaN高电子迁移率晶体管[J]. 电子科技, 2021, 34(5): 61-65.
[3]	苏芳文,毛鸿凯,隋金池,林茂,张飞. 一种低功耗4H-SiC IGBT的仿真研究[J]. 电子科技, 2021, 34(1): 31-36.
[4]	毛鸿凯, 苏芳文, 林茂, 张飞, 隋金池. 一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究[J]. 电子科技, 2021, 34(1): 60-64.
[5]	王富强,马行空,瞿宜斌. 3 A/40 V新型肖特基势垒二极管的设计与研制[J]. , 2016, 29(3): 134-.
[6]	苗志坤,李天琪,徐立坤. 4H-SiC TSOB结势垒肖特基二极管静态特性[J]. , 2013, 26(8): 26-.