一种阳极连接P型埋层的AlGaN/GaN肖特基二极管

doi:10.16180/j.cnki.issn1007-7820.2020.01.010

Abstract

Abstract:

In the traditional AlGaN/GaN Schottky diodes, the anode leakage is an important factor that limits the enhancement of the breakdown voltage of the device.Therefore,aAlGaN/GaN Schottky diode structure with a P-type buried layer grown in the buffer layer and connected to the anode (AC-PBL FPs SBD) was investigated to suppress the anode leakage current. Meanwhile, field plates were added to both anode and cathode to modulate the surface electric field distribution of the device. The simulation proved that the anode leakage current of the structure was effectively suppressed, and the 2DEG in the channel was depleted. The space charge region was enlarged, and the breakdown voltage of the device was improved. The breakdown voltage of this structure was 733 V. Compared with the traditional GET SBD device, the breakdown voltage was increased by nearly 3.4 times, and the Baliga value was improved by nearly 11.6 times, indicating that the device could be applied in power electronic circuits.

Key words: AlGaN/GaN, buriedlayer, breakdownvoltage, figure of merit, fieldplate, on-resistance

CLC Number:

TN312+.3

SUN Youlei,TANG Jianxiang,WANG Ying,HUANG Yifei,WANG Wenju. A AlGaN/GaN Schottky Diode with Anode Connected P-type Buried Layer[J].Electronic Science and Technology, 2020, 33(1): 51-56.

Figures/Tables 10

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References 16

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参数	值
阳极长度 (L_A)	0.2 μm
栅终端长度 (L_GE)	0.45 μm
阴极长度 (L_C)	0.1 μm
漂移区距离 (L_AC)	5 μm
势垒层厚度(T_bar)	25 nm
沟道层厚度 (T_chan)	50 nm
底层缓冲层厚度 (T_bot)	1.6 μm
中间缓冲层厚度 (T_mid)	0.4 μm
阴极场板长度 (L_cfp)	0.5 μm
阳极场板长度 (L_afp)	0.83 μm
P型埋层的厚度(T_P)	0.1μm
P型埋层的长度(L_d)	1~3 μm
P型埋层到沟道距离(T_s)	0.05~0.3 μm

A AlGaN/GaN Schottky Diode with Anode Connected P-type Buried Layer

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